FGH25N120FTDS [ONSEMI]
IGBT，1200V，25A，场截止沟槽;
| 型号： | FGH25N120FTDS |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，25A，场截止沟槽 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
1200 V, 25 A
FGH25N120FTDS
Description
Using advanced field stop trench technology, ON Semiconductor’s
1200 V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder and PFC
applications.
www.onsemi.com
C
Features
• High Speed Switching
• Low Saturation Voltage: V
• High Input Impedance
=1.60 V @ I = 25 A
C
CE(sat)
G
• These Device is Pb−Free and is RoHS Compliant
E
Applications
• Solar Inverter, UPS, Welder, PFC
G
C
E
TO−247−3
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH25N120
FTDS
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH25N120FTDS = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
February, 2020 − Rev. 3
FGH25N120FTDS/D
FGH25N120FTDS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Symbol
Rating
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
CES
GES
1200
V
25
V
T
T
= 25°C
I
C
50
A
C
Collector Current
= 100°C
25
A
C
Pulsed Collector Current
Diode Forward Current
I
(Note 1)
75
A
CM
T
T
= 25°C
I
F
50
25
A
C
Diode Forward Current
= 100°C
A
C
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
I
75
A
FM
T
T
= 25°C
P
313
W
W
°C
°C
°C
C
D
= 100°C
125
C
T
−55 to +150
−55 to +150
300
J
T
stg
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
(IGBT)
Typ
−
Max
0.4
Unit
°C/W
°C/W
°C/W
R
R
ꢀ
JC
(Diode)
−
1.25
40
ꢀ
JC
R
−
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH25N120FTDS
FGH25N120FTDS
TO−247
(Pb−Free)
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
GE
V
CE
V
GE
= 0 V, I = 250 ꢁ A
1200
−
−
−
−
V
CES
C
Collector Cut−Off Current
G−E Leakage Current
I
= V
, V = 0 V
−
−
1
mA
nA
CES
CES
GES
GE
I
= V
, V = 0 V
CE
250
GES
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 25 mA, V = V
GE
3.5
−
6
7.5
2
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 25 A, V = 15 V
1.6
1.92
CE(sat)
GE
= 25 A, V = 15 V, T = 125°C
−
−
GE
C
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2
FGH25N120FTDS
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
4090
135
75
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 600 V, I = 25 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
26
41
35
53
196
132
1.84
1.5
3.34
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢂ ꢃ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
151
102
1.42
1.16
2.58
22
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
mJ
mJ
mJ
ns
E
ts
t
t
V
= 600 V, I = 25 A,
= 10 ꢂ ꢃ V = 15 V,
GE
d(on)
CC C
R
G
t
r
41
−
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
163
136
2.04
1.58
3.62
169
33
−
ns
d(off)
t
f
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
−
mJ
mJ
mJ
nC
nC
nC
−
E
ts
−
Q
V
CE
= 600 V, I = 25 A, V = 15 V
225
44
104
g
C
GE
Q
ge
gc
Q
78
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Symbol
Test Conditions
Min
−
Typ
2.5
2.3
411
496
5.2
6.9
1.1
1.7
Max
3.5
−
Unit
Diode Forward Voltage
V
FM
I = 25 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
V
F
−
Diode Reverse Recovery Time
t
rr
I = 25 A, di /dt = 200 A/ꢁ s
−
535
−
ns
A
F
F
−
Diode Peak Reverse Recovery
Current
I
rr
−
6.8
−
−
Diode Reverse Recovery Charge
Q
−
1.82
−
ꢁ
C
rr
−
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3
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS
180
180
150
120
T
C
= 125°C
T
C
= 25°C
20 V
17 V
20 V
150
120
12 V
15 V
15 V
17 V
12 V
10 V
90
60
90
60
10 V
9 V
9 V
V
= 8 V
30
0
30
0
GE
V
= 8 V
GE
0
2
4
6
8
4
6
8
0
2
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
Common Emitter
Common Emitter
V
= 15 V
GE
100
80
V
= 20 V
GE
T
T
= 25°C
= 125°C
C
C
100
80
T
C
T
C
= 25°C
= 125°C
60
60
40
20
40
20
0
0
2
0
4
6
15
10
Gate−Emitter Voltage, V [V]
0
5
Collector−Emitter Voltage, V [V]
Figure 3. Typical Saturation Voltage
Characteristics
CE
GE
Figure 4. Transfer Characteristics
3.0
2.5
20
16
12
8
Common Emitter
GE
Common Emitter
C
V
= 15 V
T
= 25°C
50 A
25 A
2.0
1.5
1.0
50 A
12
I
= 10 A
C
4
0
25 A
= 10 A
I
C
125
0
4
8
16
20
25
50
75
100
Case Temperature, T [°C]
C
Gate Emitter Voltage, V [V]
GE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs VGE
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4
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
140
Common Emitter
T
C
= 125°C
120
100
80
12
8
60
40
20
0
50 A
12
4
25 A
= 10 A
I
C
0
16
20
0
4
8
3
1
2
0
10
10
10
10
Gate−Emitter Voltage, V [V]
Frequency [kHz]
GE
Figure 8. Load Current vs. Frequency
Figure 7. Saturation Voltage vs. VGE
15
8000
6000
4000
2000
0
Common Emitter
Common Emitter
V
GE
= 0 V, f = 1 MHz
T
C
= 25°C
12
9
T
C
= 25°C
600 V
400 V
V
CC
= 200 V
C
ies
6
C
oes
3
C
res
0
80
120
160
200
30
40
1
10
Collector−Emitter Voltage, V [V]
0
CE
Gate Charge, Q [nC]
g
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
200
100
200
10 ꢁ s
100 ꢁ s
100
10
1 ms
10 ms
DC
t
r
1
Common Emitter
= 600 V, V = 15 V
*Notes:
1. T = 25°C
V
CC
GE
C
0.1
0.01
t
d(on)
I
C
= 25 A
2. T = 150°C
J
T
C
T
C
= 25°C
= 125°C
3. Single Pulse
10
50
10
100
1000 3000
1
0
10
20
30
40
ꢂ]
Gate Resistance, R
[
G
Collector−Emitter Voltage, V [V]
CE
Figure 12. Turn−On Characteristics vs. Gate
Figure 11. SOA Characteristics Gate
Resistance
Resistance
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5
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
100
Common Emitter
V
= 15 V, R = 10 ꢂ
GE
G
T
T
= 25°C
C
C
= 125°C
t
d(off)
t
r
t
f
Common Emitter
= 600 V, V = 15 V
t
d(on)
V
C
CC
GE
I
= 25 A
T
C
T
C
= 25°C
= 125°C
10
10
50
50
0
10
20
30
40
10
20
30
40
0
Collector Current, I [A]
Gate Resistance, R
[ꢂ]
C
G
Figure 14. Turn−on Characteristics
Figure 13. Turn−Off Characteristics vs. Gate
vs. Collector Current
Resistance
1000
Common Emitter
Common Emitter
GE
V
I
= 600 V, V = 15 V
V
T
= 15 V, R = 10 ꢂ
CC
C
GE
G
= 25 A
= 25°C
= 125°C
C
C
T
C
T
C
= 25°C
= 125°C
T
t
f
E
on
100
20
t
d(off)
E
off
1
10
20
30
40
50
0
0
10
20
30
40
ꢂ]
50
Collector Current, I [A]
Gate Resistance, R
[
G
C
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−off Characteristics vs.
Collector Current
10
100
Common Emitter
V
T
C
= 15 V, R = 10 ꢂ
GE
C
G
E
on
= 25°C
T
= 125°C
E
off
1
10
Safe Operating Area
V
GE
= 15 V, T = 125°C
C
0.1
1
0
10
20
30
40
50
100
1000 3000
1
10
Collector Current, I [A]
Collector−Emitter Voltage, V [V]
C
CE
Figure 18. Turn−off Switching SOA
Figure 17. Switching Loss vs. Collector
Current
Characteristics
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6
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
7
30
10
6
200 A/ꢁ s
T = 125°C
J
5
T = 25°C
J
4
3
2
1
d /dt = 100 A/ꢁ s
iF
T
C
T
C
= 25°C
= 125°C
T
C
= 25°C
0.1
3
0
1
2
10
20
30
40
50
Forward Voltage, V [V]
Forward Current, I [A]
F
F
Figure 20. Reverse Recovery Current
Figure 19. Forward Characteristics
1200
1000
2.0
1.5
d /dt = 100 A/ꢁ s
iF
200 A/ꢁ s
800
600
400
1.0
0.5
0.0
200 A/ꢁ s
d /dt = 100 A/ꢁ s
iF
T
= 25°C
C
T
= 25°C
C
10
20
30
40
10
20
30
40
50
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 22. Reverse Recovery Time
Figure 21. Stored Charge
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
Single Pulse
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢀ jc + T
J
C
0.001
1E−5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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FGH25T120SMD_F155
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, TO-247G03, 3 PIN
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