FGH15T120SMD-F155 [ONSEMI]
IGBT，1200V，15A，场截止沟槽;
| 型号： | FGH15T120SMD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，15A，场截止沟槽 双极性晶体管 |
| 文件： | 总9页 (文件大小：776K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGH15T120SMD
1200 V， 15 A 场截止沟道 IGBT
概述
通过采用创新的场截止沟道 IGBT 技术，飞兆半导体新型系列的
场截止沟道 IGBT 可为光伏逆变器、 UPS、焊机和 PFC 等硬开
关应用提供最佳性能。
特性
•
•
•
•
•
•
FS 沟道技术，正温度系数
高速开关
低饱和电压：VCE(sat) =1.8 V @ IC=15 A
ILM(1) 部件 100% 检测
高输入阻抗
应用
•
光伏逆变器、焊机、 UPS 和 PFC 应用
符合 RoHS 标准
C
E
C
G
G
集电极
(FLANGE)
E
绝对最大额定值 T =25°C 除非另有说明
C
符号
说明
额定值
1200
±25
单位
VCES
V
V
V
A
A
集电极 - 发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
VGES
±30
@ TC=25°C
30
IC
@ TC=100°C
@ TC=25°C
15
60
60
30
15
集电极电流
I
LM (1)
A
A
A
A
箝位感性负载电流
集电极脉冲电流
ICM (2)
二极管正向连续电流
二极管正向连续电流
@ TC=25°C
IF
@ TC=100°C
IFM
PD
100
333
A
二极管最大正向电流
最大功耗
@ TC=25°C
W
W
°C
°C
@ TC=100°C
167
最大功耗
TJ
-55 至 +175
-55 至 +175
工作结温
Tstg
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
300
°C
TL
热性能
符号
RθJC(IGBT)
RθJC（二极管）
RθJA
参数
结点 - 壳体的热阻
典型值
最大值
0.45
2.0
单位
°C/W
°C/W
°C/W
--
--
--
结点 - 壳体的热阻
40
结至环境热阻
注意：
1. Vcc=600 V， V =15 V， I =60 A， R =34 Ω， 感性负载
GE
C
G
2. 受限于 Tjmax
©2013 飞兆半导体公司
Publication Order Number:
FGH15T120SMDCN/D
December-2017, 修订版 3
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGH15T120SMD
FGH15T120SMD-F155
TO-247G03
-
-
30
IGBT 的电气特性T =25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
ICES
V
GE=0 V, IC=250 μA
1200
-
-
-
-
V
集电极 - 发射极击穿电压
集电极切断电流
G-E 漏电流
VCE=VCES， VGE=0 V
VGE=VGES， VCE=0 V
-
-
250
±400
μA
nA
IGES
导通特性
VGE(th)
G-E 阈值电压
IC=15 mA， VCE=VGE
4.9
-
6.2
1.8
7.5
2.4
V
V
IC =15 A， VGE=15 V
TC=25°C
VCE(sat)
集电极 - 发射极间饱和电压
IC =15 A, VGE=15 V,
TC=175°C
-
1.9
-
V
动态特性
Cies
-
-
-
1460
65
-
-
-
pF
pF
pF
输入电容
V
CE =30 V， VGE=0 V，
Coes
输出电容
f=1 MHz
Cres
37
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
47
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
490
12
ns
关断延迟时间
下降时间
V
CC=600 V， IC=15 A，
RG=34 Ω， VGE = 15 V，
感性负载， TC =25°C
ns
Eon
Eoff
Ets
1.15
0.46
1.61
32
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
42
ns
510
24
ns
关断延迟时间
下降时间
V
CC=600 V， IC=15 A，
RG=34 Ω， VGE = 15 V，
感性负载， TC =175°C
ns
Eon
Eoff
Ets
1.86
0.70
2.56
128
11
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
V
V
CE=600 V， IC=15 A，
GE=15 V
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
70
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2
二极管电气特性T =25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
IF =15 A, TC=25°C
-
2.8
3.7
V
VFM
二极管正向电压
IF =15 A, TC=175°C
-
-
-
-
-
-
-
-
2.3
72
-
-
-
-
-
-
-
-
V
ns
A
trr
VR=600 V， IF=15 A，
diF/dt=200 A/μs， TC =25°C
二极管反向恢复时间
二极管反向恢复峰值电流
二极管反向恢复电荷
反向恢复电能
Irr
7.4
Qrr
Erec
trr
270
120
183
12
nC
μJ
ns
A
VR=600 V， IF=15 A，
diF/dt=200 A/μs， TC =175°C
二极管反向恢复时间
二极管反向恢复峰值电流
二极管反向恢复电荷
Irr
Qrr
1085
nC
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3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
60
60
TC = 175oC
TC = 25oC
12V
15V
20V
15V
12V
20V
48
48
36
24
12
0
36
24
12
0
10V
10V
VGE = 8V
8.0
VGE = 8V
0.0
2.0
4.0
6.0
8.0
10.0
5.0
20
0.0
2.0
4.0
6.0
10.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与壳温的关系 （在可变电流强度下）
3.0
60
Common Emitter
VGE = 15 V
Common Emitter
VGE = 15V
30 A
TC = 25oC
TC = 175oC
48
36
24
12
0
--------
2.5
2.0
15 A
IC = 8 A
1.5
1.0
25
50
75
100
125
150
175
0.0
1.0
2.0
3.0
4.0
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
20
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
15
15A
12
15A
IC=8A
30A
IC=8A
10
30A
8
4
0
5
0
4
8
12
16
20
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Common Emitter
TC = 25oC
12
Cies
400V
VCC = 200V
600V
1000
100
9
6
3
0
Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
20
0
26
52
78
104
130
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
100
1000
td(off)
TC = 25oC
TC = 175oC
100
tr
tf
10
Common Emitter
VCC = 600V, VGE = 15V
td(on)
IC = 15A
TC = 25oC
1
TC = 175oC
10
0.1
0
14
28
42
56
70
0
14
28
42
56
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
300
20
Common Emitter
VGE = 15V, RG = 34Ω
TC = 25oC
Common Emitter
VCC = 600V, VGE = 15V
10
IC = 15A
TC = 175oC
TC = 25oC
TC = 175oC
100
Eon
tr
1
td(on)
Eoff
10
0.1
0
6
12
18
24
30
0
14
28
42
56
70
Gate Resistance, RG [Ω]
Collector Current, IC [A]
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5
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
10
1000
Common Emitter
VGE = 15V, RG = 34Ω
td(off)
TC = 25oC
TC = 175oC
Eon
100
1
tf
10
Eoff
Common Emitter
VGE = 15V, RG = 34Ω
TC = 25oC
TC = 175oC
0.1
1
0
6
12
18
24
30
0
6
12
18
24
30
1M
5
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
200
150
ICMAX(Pulse)
100
VCE = 600V
Load current : peak of square Wave
10μs
100μs
Duty cycle : 50%
Tc= 100oC
ICMAX(Continuous)
10
100
50
0
1ms
10ms
Power Dissipation =167 W
DC Operation
1
Single Nonrepetitive
TC = 100oC
Pulse TC = 25oC
0.1
0.01
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
1k
10k
100k
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. 正向特性
图 18. 反向恢复电流
20
300
TC = 25oC
TC = 175oC
15
100
10
1
TC =175oC
diF/dt = 200A/μs
10
5
diF/dt = 100A/μs
diF/dt = 200A/μs
TC =25oC
diF/dt = 100A/μs
0
0.1
0
5
10
15
20
25
30
1
2
3
4
Forward Current, IF [A]
Forward Voltage, VF [V]
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6
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
300
1.4
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
250
1.2
1.0
0.8
0.6
0.4
0.2
0.0
diF/dt = 200A/μs
diF/dt = 100A/μs
diF/dt = 100A/μs
diF/dt = 200A/μs
200
150
100
50
diF/dt = 200A/μs
diF/dt = 100A/μs
diF/dt = 100A/μs
diF/dt = 200A/μs
5
10
15
20
25
30
5
10
15
20
25
30
Forward Current, IF [A]
Forwad Current, IF [A]
图 21. IGBT 瞬态热阻抗
0.5
0.5
0.1
0.01
1E-3
0.3
0.1
0.05
0.02
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
3
1
0.5
0.3
0.1
0.05
0.1
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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机械尺寸
图 23. TO-247，模塑， 3 引脚， JEDEC 变体 AB （有效）
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
尺寸单位为毫米
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8
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相关型号：
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