FGB40T65SPD-F085 [ONSEMI]
IGBT，650V，40A，场截止沟槽;
| 型号： | FGB40T65SPD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：2022K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 40 A
FGB40T65SPD-F085
General Description
Using the novel field stop 3rd generation IGBT technology,
FGH40T65SPD−F085 offers the optimum performance with both low
conduction loss and switching loss for a high efficiency operation in
various applications, while provides 50 V higher blocking voltage and
rugged high current switching reliability. Meanwhile, this part also
offers and advantage of outstanding performance in parallel operation.
www.onsemi.com
C
Features
G
• Low Saturation Voltage: V
= 2.0 V (Typ.) @ I = 40 A
C
CE(sat)
• 100% of the Parts are Dynamically Tested *
• Short Circuit Ruggedness > 5 ms @ 25°C
E
• Maximum Junction Temperature : T = 175°C
J
COLLECTOR
(FLANGE)
• Fast Switching
• Tight Parameter Distribution
• Positive Temperature Coefficient for Easy Parallel Operation
• Copacked with Soft, Fast Recovery Diode
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and are RoHS Compliant
G C E
2
D PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
* V = 400 V, V = 15 V, I = 120 A, R = 20 W, Inductive Load
CC
GE
C
G
MARKING DIAGRAM
Applications
• Onboard Charger
• AirCon Compressor
• PTC Heater
ON ZXYYKK
FGB40T65
SPD
• Motor Drivers
• Other Automotive Power−train and Auxiliary Applications
FGB40T65SPD = Specific Device Code
Z
XYY
KK
= Assembly Plant Code
= 3−Digit Data Code
= 2−Digits Lot Run Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
FGB40T65SPD−F085/D
April, 2021 − Rev. 3
FGB40T65SPD−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
V
20
V
Transient Gate to Emitter Voltage
Collector Current
30
V
I
C
@ T = 25°C
80
A
C
Collector Current
@ T = 100°C
40
A
C
I
I
Pulsed Collector Current
Diode Forward Current
(Note 1)
120
A
CM
I
F
@ T = 25°C
40
A
C
Diode Forward Current
@ T = 100°C
20
120
A
C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
(Note 1)
A
FM
P
@ T = 25°C
267
W
W
ms
°C
°C
°C
D
C
@ T = 100°C
134
C
SCWT
@ T = 25°C
5
C
T
−55 to +175
−55 to +175
300
J
T
stg
T
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by max. junction temperature
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
DBVCES
DTJ
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
mA
CES
GES
CE
CES
GE
I
, V = 0 V
nA
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
C
I
C
I
C
= 40 mA, V = V
GE
4.0
−
5.8
2.0
2.9
7.5
2.4
−
V
V
V
GE(th)
CE
V
Collector to Emitter Saturation Voltage
= 40 A V = 15 V
, GE
CE(sat)
= 40 A V = 15 V, T = 175°C
−
,
GE
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
CE
= 30 V V = 0 V, f = 1 MHz
−
−
−
1520
92
−
−
−
pF
pF
pF
ies
,
GE
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
15
res
SWITCHING CHARACTERISTICS
T
Turn−On Delay Time
Rise Time
V
V
= 400 V, I = 40 A, R = 6 W,
−
−
−
−
−
−
−
18
26
−
−
−
−
−
−
−
ns
ns
d(on)
CC
GE
C
G
= 15 V,
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
35
ns
d(off)
T
f
10
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
0.97
0.28
1.25
mJ
mJ
mJ
on
off
E
E
ts
www.onsemi.com
2
FGB40T65SPD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
T
T
Turn−On Delay Time
Rise Time
V
V
= 400 V, I = 40 A, R = 6 W,
−
−
−
−
−
−
−
5
−
14
35
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
GE
C
G
= 15 V,
T
r
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
38
ns
d(off)
T
f
13
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
1.61
0.47
2.08
−
mJ
mJ
mJ
ms
on
off
E
E
ts
T
V
V
= 400 V, V = 15 V, R = 10 W
GE G
SC
CC
Q
= 400 V, I = 40 A, V = 15 V
36
nC
g
Total Gate Charge
CE
C
GE
Q
Q
Gate to Emitter Charge
Gate to Collector Charge
−
−
12
11
−
−
nC
nC
ge
gc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
−
Typ
2.0
1.8
51
Max
2.7
−
Unit
V
FM
Diode Forward Voltage
I = 20 A
T
C
T
C
T
C
C
C
C
C
= 25°C
V
F
= 175°C
= 175°C
= 25°C
−
E
rec
Reverse Recovery Energy
I = 20 A,
−
−
mJ
F
dI /dt = 200 A/ms
F
T
rr
Diode Reverse Recovery Time
T
T
T
T
−
34
−
ns
= 175°C
= 25°C
−
206
56
−
Q
Diode Reverse Recovery Charge
−
−
nC
rr
= 175°C
−
731
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ
−
Max
0.56
1.71
40
Unit
°C/W
°C/W
°C/W
R
R
(IGBT) Thermal Resistance, Junction to Case
q
JC
(Diode) Thermal Resistance, Junction to Case
−
q
JC
R
Thermal Resistance, Junction to Ambient
−
q
JA
www.onsemi.com
3
FGB40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristic
Figure 5. Typical Saturation Voltage
Figure 6. Saturation Voltage vs. VGE Characteristics
www.onsemi.com
4
FGB40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn Off Switching SOA Characteristics
www.onsemi.com
5
FGB40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn−on Characteristics vs.
Figure 14. Turn−off Characteristics vs.
Gate Resistance
Gate Resistance
Figure 15. Turn−on Characteristics vs.
Figure 16. Turn−off Characteristics vs.
Collector Current
Collector Current
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
www.onsemi.com
6
FGB40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23. Saturation Voltage vs. Case
Temperature at Variant Current Level
www.onsemi.com
7
FGB40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = P
x Z
x R
+ T
qJA
DM
qJA
C
Figure 24. Transient Thermal Impedance of IGBT
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = P
x Z
x R
+ T
qJA C
DM
qJA
Figure 25. Transient Thermal Impedance of Diode
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
2
FGB40T65SPD
FGB40T65SPD−F085
D PAK−3 (TO−263, 3−LEAD)
(Pb−Free)
−
−
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明