FGB20N60SFD [ONSEMI]
IGBT,600V,20A,场截止;型号: | FGB20N60SFD |
厂家: | ONSEMI |
描述: | IGBT,600V,20A,场截止 栅 瞄准线 双极性晶体管 功率控制 |
文件: | 总12页 (文件大小:518K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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March 2015
FGB20N60SFD
600 V, 20 A Field Stop IGBT
Features
Applications
•
•
•
•
•
High Current Capability
• Solar Inverter, UPS, Welder, PFC
Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
High Input Impedance
General Description
Fast Switching : EOFF = 8 uJ/A
RoHS Compliant
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
C
COLLECTOR
(FLANGE)
G
TO-263AB/D2-PAK
E
G
E
C
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
600
20
30
40
20
60
V
VGES
V
@ TC = 25oC
@ TC = 100oC
A
A
A
IC
ICM (1)
IF
IFM(1)
PD
Collector Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
20
10
A
A
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
60
A
@ TC = 25oC
@ TC = 100oC
208
W
W
oC
oC
83
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.6
Unit
oC/W
oC/W
oC/W
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
-
-
-
Thermal Resistance, Junction to Case
2.6
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
40
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGB20N60SFD FGB20N60SFD
D2-PAK
Reel
13” Dia
N/A
800
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
600
-
-
-
-
V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
0.6
V/oC
V
GE = 0 V, IC = 250 μA
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
μA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 μA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V,
4.0
-
5.0
2.2
6.5
2.8
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.4
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
940
110
40
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
16
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
90
-
ns
V
R
CC = 400 V, IC = 20 A,
G = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
24
48
-
ns
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.37
0.16
0.53
12
mJ
mJ
mJ
ns
-
-
-
16
-
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
95
-
ns
VCC = 400 V, IC = 20 A,
R
G = 10 Ω, VGE = 15 V,
28
-
ns
Inductive Load, TC = 125oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
0.4
0.28
0.69
-
mJ
mJ
mJ
-
-
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Qg
Total Gate Charge
-
-
-
65
7
-
-
-
nC
nC
nC
V
V
CE = 400 V, IC = 20 A,
GE = 15 V
Qge
Qgc
Gate to Emitter Charge
Gate to Collector Charge
33
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
T
T
T
C = 25oC
C = 125oC
C = 25oC
-
-
-
-
-
-
1.9
1.7
34
57
41
96
2.5
VFM
Diode Forward Voltage
IF = 10 A
V
-
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
TC = 125oC
C = 25oC
TC = 125oC
-
IF =10 A, diF/dt = 200 A/μs
T
-
Qrr
nC
-
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
60
60
TC = 25oC
20V
TC = 125oC
12V
10V
20V
12V
15V
10V
15V
40
40
20
0
VGE = 8V
20
VGE = 8V
0
0.0
1.5
3.0
4.5
6.0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 125oC
40
40
20
0
20
0
4
6
8
10
12
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4
3
2
1
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
40A
20A
40A
IC = 10A
4
20A
IC = 10A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-Emitter Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
40A
20A
12
40A
4
4
20A
IC = 10A
4
IC = 10A
0
0
0
4
8
12
16
20
0
8
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
2500
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
2000
300V
VCC = 100V
200V
Cies
9
6
3
0
1500
1000
Coes
500
Cres
0
0.1
1
10
0
20
40
60
80
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10μs
100μs
10
1ms
10 ms
tr
DC
Common Emitter
VCC = 400V, VGE = 15V
1
td(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
10
5
IC = 20A
TC = 25oC
TC = 125oC
3. Single Pulse
0.1
1
10
100
1000
0
10
20
30
40
50
60
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 14. Turn-on Characteristics vs.
Collector Current
Gate Resistance
200
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
Common Emitter
VCC = 400V, VGE = 15V
100
IC = 20A
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
tr
100
tf
td(on)
10
3
10
0
10
20
30
40
0
10
20
30
40
50
60
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
3
300
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
VGE = 15V, RG = 10Ω
TC = 25oC
IC = 20A
TC = 25oC
1
TC = 125oC
TC = 125oC
td(off)
100
Eon
Eoff
tf
0.1
10
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
80
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
Eon
10
Eoff
0.1
Safe Operating Area
VGE = 15V, TC = 125oC
0.02
1
0
10
20
30
40
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
40
100
TJ = 125oC
TC = 125oC
TJ = 75oC
10
10
TJ = 25oC
1
TC = 75oC
0.1
1
TC = 25oC
0.01
1E-3
0.1
0
100
200
300
400
500
600
0
1
2
3
4
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
60
60
50
40
30
20
10
50
40
30
20
10
200A/μs
di/dt = 100A/μs
200A/μs
di/dt = 100A/μs
0
5
10
15
20
0
5
10
15
20
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
7
www.fairchildsemi.com
Mechanical Dimensions
Figure 24. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
8
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
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Not In Production
Rev. I73
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
9
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
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