FGAF40S65AQ [ONSEMI]
IGBT，650V，40A，场截止沟槽;
| 型号： | FGAF40S65AQ |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，40A，场截止沟槽 局域网 通用开关 双极性晶体管 |
| 文件： | 总10页 (文件大小：488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
650 V, 40 A
FGAF40S65AQ
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation of RC IGBTs offer the optimum
performance for PFC applications and welder where low conduction
and switching losses are essential.
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Features
V
I
C
CES
• Maximum Junction Temperature: T = 175°C
J
650 V
40 A
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 40 A
C
C
E
CE(sat)
• 100% of the Parts Tested for I (Note 1)
LM
• High Input Impedance
G
• Fast Switching
• Tighten Parameter Distribution
• IGBT with Monolithic Reverse Conducting Diode
• This Device is Pb−Free and is RoHS Compliant
Applications
• PFC, Welder
TO−3PF
CASE 340AH
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2021 − Rev. 3
FGAF40S65AQ/D
FGAF40S65AQ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Device Marking
Package
Reel Size
Tape Width
Quantity per Tube
FGAF40S65AQ
FGAF40S65AQ
TO−3PF
−
−
30
Table 1. ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGAF40S65AQ
Unit
V
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
650
20
V
30
V
I
C
@ T = 25°C
80
A
C
@ T = 100°C
40
C
I
(Note 1)
(Note 2)
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
@ T = 25°C
160
A
A
LM
C
I
160
CM
I
F
@ T = 25°C
40
A
C
@ T = 100°C
20
160
A
C
I
(Note 2)
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
A
FM
P
D
@ T = 25°C
94
W
W
°C
°C
°C
C
@ T = 100°C
47
C
T
J
Operating Junction Temperature Range
Storage Temperature Range
−55 to +175
−55 to +175
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 sec
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 160 A, R = 7 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
Table 2. THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
FGAF40S65AQ
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1.6
40
_C/W
_C/W
q
JC
R
q
JA
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2
FGAF40S65AQ
Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
GE
V
GE
V
CE
V
GE
= 0 V, I = 1 mA
650
−
−
0.5
−
−
V
V/°C
mA
CES
C
DBV
= 0 V, I = 1 mA
−
CES
J
C
I
Collector Cut−Off Current
G−E Leakage Current
= V
, V = 0 V
−
250
400
CES
GES
CES
GES
GE
I
= V
, V = 0 V
CE
−
−
nA
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 40 mA, V = V
GE
2.6
−
5.3
1.6
1.9
6.6
2.1
−
V
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V,
−
GE
T
= 175°C
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30 V V = 0 V,
−
−
−
2590
35
−
−
−
pF
pF
pF
ies
CE
,
GE
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
10
res
SWITCHING CHARACTERISTICS
T
Turn−On Delay Time
Rise Time
V
= 400 V, I = 10 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17.8
6.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
CC
G
C
R
= 6 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
81.6
9.3
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
132
62
on
off
E
E
194
19.5
9.6
ts
T
d(on)
V
= 400 V, I = 20 A,
= 6 W, V = 15 V,
GE
CC C
R
G
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
76.8
7.4
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
296
111
407
17.5
6.8
on
off
E
E
ts
T
d(on)
V
= 400 V, I = 10 A,
= 6 W, V = 15 V,
GE
CC C
R
G
T
r
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
88
d(off)
T
f
9.7
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
285
106
391
on
off
E
E
ts
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3
FGAF40S65AQ
Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
T
Turn−On Delay Time
V
= 400 V, I = 20 A,
−
−
−
−
−
−
−
−
−
−
19.1
11.2
81.6
9.2
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
d(on)
CC
G
C
R
= 6 W, V = 15 V,
GE
T
r
Rise Time
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
552
186
738
75
on
off
E
E
ts
Q
V
CE
V
GE
= 400 V, I = 40 A,
g
C
= 15 V
Q
Q
15
ge
gc
18
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
I = 20 A
= 25°C
Min
−
Typ
1.2
Max
1.6
−
Unit
V
FM
Diode Forward Voltage
T
C
V
F
T
= 175°C
= 175°C
−
1.16
325
C
C
E
rec
Reverse Recovery Energy
I = 20 A,
T
−
−
mJ
F
dI /dt = 200 A/ms
F
T
rr
Diode Reverse Recovery Time
T
C
= 25°C
−
274
−
ns
T
C
= 175°C
−
362
−
Q
Diode Reverse Recovery Charge
T
= 25°C
−
1596
2651
−
nC
rr
C
T
C
= 175°C
−
−
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4
FGAF40S65AQ
TYPICAL CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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5
FGAF40S65AQ
TYPICAL CHARACTERISTICS (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Turn−on Characteristics vs.
Figure 10. Turn−off Characteristics
Gate Resistance
vs. Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn−on Characteristics vs.
Collector Current
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6
FGAF40S65AQ
TYPICAL CHARACTERISTICS (Continued)
Figure 13. Turn−off Characteristics vs.
Figure 14. Switching Loss vs.
Collector Current
Collector Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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7
FGAF40S65AQ
TYPICAL CHARACTERISTICS (Continued)
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3PF−3L
CASE 340AH
ISSUE A
DATE 09 JAN 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
SEATING
PLANE
P
A
E
A1
Q
H1
MILLIMETERS
DIM MIN
MAX
5.70
3.20
3.50
2.20
0.95
2.15
4.20
1.10
24.70
25.30
3.70
15.70
5.55
10.20
19.50
5.20
2.20
3.80
4.70
A
A1
A2
A3
b
5.30
2.80
3.10
1.80
0.65
1.90
3.80
0.80
24.30
D
b2
b3
c
D2
D
L2
D3
D2 24.70
L1
D3
E
3.30
15.30
5.35
9.80
19.10
4.80
1.90
3.40
4.30
e
H1
L
L1
L2
P
NOTE 3
L
Q
1
2
3
c
3X b
3X b2
A3
A2
b3
e
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79755E
TO−3PF−3L
PAGE 1 OF 1
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