FFSP08120A [ONSEMI]
SiC 二极管,1200V,8A,TO-220-2;型号: | FFSP08120A |
厂家: | ONSEMI |
描述: | SiC 二极管,1200V,8A,TO-220-2 局域网 功效 光电二极管 |
文件: | 总6页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
8ꢀA, 1200 V, D1, TO-220-2L
1. Cathode
2. Anode
Schottky Diode
FFSP08120A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
TO−220−2LD
CASE 340BB
Features
MARKING DIAGRAM
• Max Junction Temperature 175°C
• Avalanche Rated 80 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
FFSP
08120A
AYWWZZ
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
FFSP08120A
= Specific Device Code
A
= Assembly Site
YWW
ZZ
= Date Code (Year & Week)
= Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2023 − Rev. 3
FFSP08120A/D
FFSP08120A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 148°C
1200
E
AS
80
mJ
A
I
F
8
530
C
I
Non-Repetitive Peak Forward Surge Current
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F,Max
480
A
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse, t = 8.3 ms
68
A
F,SM
p
I
Half−Sine Pulse, t = 8.3 ms
32
A
F,RM
p
P
T
= 25°C
166
W
W
°C
TOT
C
C
T
= 150°C
27
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 80 mJ is based on starting T = 25°C, L = 0.5 mH, I = 18 A, V = 150 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.9
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 8 A, T = 25°C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 8 A, T = 125°C
−
F
C
I = 8 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25°C
−
mA
C
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
55
538
50
40
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Quantity
FFSP08120A
FFSP08120A
TO−220−2LD
Tube
50 Units
www.onsemi.com
2
FFSP08120A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
1
15
10
5
10
T = −55°C
J
T = 175°C
J
T = 25°C
J
0
10
T = 75°C
J
T = 125°C
J
T = 125°C
J
−1
10
T = 175°C
J
T = 75°C
J
−2
10
10
T = 25°C
J
T = −55°C
J
−3
0
0
1
2
3
200
400
600
800
1000
1200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
1.0
0.8
140
120
100
80
T = 175°C
J
D = 0.1
T = 125°C
J
T = 75°C
J
T = 25°C
J
D = 0.2
D = 0.3
D = 0.5
0.6
0.4
T = −55°C
J
60
40
0.2
0.0
D = 0.7 D = 1
20
0
1000
1100
1200
1300
1400
1500
25
50
75
100
125
150
175
V , Reverse Voltage (V)
T , Case Temperature (5C)
R
C
Figure 4. Current Derating
Figure 3. Reverse Characteristics
120
80
80
60
40
20
0
40
0
0
200
400
600
800
1000
25
50
75
100
125
150
175
V , Reverse Voltage (V)
T , Case Temperature (5C)
R
C
Figure 5. Power Derating
Figure 6. Capacitive Charge vs. Reverse Voltage
www.onsemi.com
3
FFSP08120A
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
5000
1000
25
20
15
10
100
10
5
0
0.1
1
10
100
1000
0
200
400
600
800
1000
V , Reverse Voltage (V)
R
V , Reverse Voltage (V)
R
Figure 7. Capacitance vs. Reverse Voltage
Figure 8. Capacitance Stored Energy
2
DUTY CIRCLE−DESCENDING ORDER
1
D=0.5
P
DM
0.2
t
1
0.1
t
2
0.05
NOTES:
Z
R
q
JC
(t) = r(t) × R
= 0.9°C/W
q
q
JC
JC
0.02
0.1
0.01
SINGLE PULSE
Peak T = P
Duty Cycle, D = t / t
× Z (t) + T
q
JC C
J
DM
1
2
0.05
−4
−3
−2
−1
10
10
10
t, Rectangular Pulse Duration (s)
10
1
Figure 9. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
4.09
3.50
M
M
B A
0.36
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C
A
B
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80
4.30
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明