FFSH2065B-F085 [ONSEMI]
汽车碳化硅 (SiC) 肖特基二极管，650 V;
| 型号： | FFSH2065B-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 汽车碳化硅 (SiC) 肖特基二极管，650 V 局域网 功效 测试 光电二极管 肖特基二极管 |
| 文件： | 总6页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
20 A, 650 V, D2, TO-247-2L
1.
2.
Anode
Cathode
Schottky Diode
FFSH2065B-F085
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
TO−247−2LD
CASE 340DA
Features
MARKING DIAGRAM
• Max Junction Temperature 175°C
• Avalanche Rated 94 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
AYWWZZ
FFSH
2065B
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
A
Y
= Assembly Location
= Year
WW
ZZ
= Work Week
= Lot Traceability
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Unit
Ratings
650
94
Unit
V
FFSH2065B = Specific Device Code
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
mJ
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
I
F
Continuous Rectified
Forward Current
@ T < 141°C
20
C
@ T < 135°C
22.3
889
861
84
C
I
Non−Repetitive Peak
Forward Surge Current
A
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
I
Non−Repetitive Forward Half−Sine Pulse,
Surge Current t = 8.3 ms
= 25°C
F, SM
p
T
C
Ptot
Power Dissipation
T
= 25°C
148
25
W
C
C
T
= 150°C
T ,T
Operating and Storage Temperature Range
−55 to
+175
°C
J
STG
TO247 Mounting Torque, M3 Screw
60
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 94 mJ is based on starting T = 25°C, L = 0.5 mH, I = 19.4 A, V = 50 V.
AS
J
AS
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2023 − Rev. 1
FFSH2065B−F085/D
FFSH2065B−F085
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Case, Max
1.01
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Conditions
I = 20 A, T = 25°C
Min
−
Typ
1.38
1.6
1.72
0.5
1
Max
1.7
2.0
2.4
40
80
160
−
Unit
V
F
V
F
C
I = 20 A, T = 125°C
−
F
C
I = 20 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
= 650 V, T = 25°C
−
mA
C
V
= 650 V, T = 125°C
−
R
R
C
V
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
51
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 300 V, f = 100 kHz
= 600 V, f = 100 kHz
−
866
80
−
−
−
−
70
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping
FFSH2065B−F085
FFSH2065B
TO−247−2LD
(Pb−Free/Halogen Free)
30 Units/Tube
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2
FFSH2065B−F085
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE
J
NOTED)
−5
40
30
20
10
T = −55°C
J
T
J
= 25°C
T
= 175°C
J
−6
−7
−8
−9
10
10
10
10
T
J
= 75°C
T
J
= 175°C
T
= 125°C
J
T
J
= 125°C
T
J
= 75°C
10
0
T
J
= 25°C
T = −55°C
J
100
200
300
400
500
600 650
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
150
100
50
180
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
60
0
D = 0.7
D = 1
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
C
T , CASE TEMPERATURE (5C)
C
Figure 3. Current Derating
Figure 4. Power Derating
5000
1000
90
60
30
100
50
0
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSH2065B−F085
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
C
(CONTINUED)
20
15
10
5
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
P
DM
0.1
0.01
D = 0.2
t
D = 0.1
1
t
2
D = 0.05
NOTES:
(t) = r(t) × R
D = 0.02
D = 0.01
Z
R
q
q
JC
JC
= 1.01°C/W
q
JC
Peak T = P
× Z
q
(t) + T
JC C
J
DM
Duty cycle, D = t /t
1
2
SINGLE PULSE
−6
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340DA
ISSUE A
DATE 27 FEB 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXXX = Specific Device Code
A
= Assembly Location
= Year
Y
WW
ZZ
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to de-
vice data sheet for actual part marking. Pb−
Free indicator, “G” or microdot “ G”, may or
may not be present. Some products may not
follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON00714H
TO−247−2LD
PAGE 1 OF 1
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