FFSD0465A [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK;
| 型号： | FFSD0465A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK |
| 文件： | 总6页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
4ꢀA, 650 V, D1, DPAK
1, 3. Cathode
2. Anode
Schottky Diode
FFSD0465A
Description
3
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
DPAK
CASE 369AS
MARKING DIAGRAM
Features
• Max Junction Temperature 175°C
• Avalanche Rated 25 mJ
FFS
D0465A
AYWWZZ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
FFSD0465A
A
YWW
ZZ
= Specific Device Code
= Assembly Site
= Date Code (Year & Week)
= Lot Code
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Value
Unit
V
V
RRM
650
E
AS
25
4
mJ
A
I
F
Continuous Rectified Forward Current @ T < 160°C
C
Continuous Rectified Forward Current @ T < 135°C
7.6
360
330
38
C
I
Non−Repetitive Peak Forward
Surge Current
T
= 25°C, 10 ms
= 150°C, 10 ms
A
A
A
F, Max
C
C
T
I
Non−Repetitive Forward Surge Half−Sine Pulse,
F, SM
Current
t = 8.3 ms
P
18
A
I
Repetitive Forward Surge
Current
Half−Sine Pulse,
F, RM
t
P
= 8.3 ms
Ptot
Power Dissipation
T
T
= 25°C
61
10
W
W
°C
C
= 150°C
C
T ,T
Operating and Storage Temperature Range
−55 to
J
STG
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 25 mJ is based on starting T = 25°C, L = 0.5 mH, I = 10 A, V = 50 V
AS
J
AS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2023 − Rev. 5
FFSD0465A/D
FFSD0465A
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max.
2.46
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 4 A, T = 25°C
Min
−
Typ
1.50
1.6
1.72
−
Max
1.75
2.0
2.4
200
400
600
−
Unit
V
F
V
F
C
I = 4 A, T = 125°C
−
F
C
I = 4 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
16
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
258
29
−
−
−
−
21
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping*
FFSD0465A
FFSD0465A
DPAK
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
−6
10
4
3
2
1
−7
10
T
J
= 175°C
T = −55°C
J
−8
10
10
T
J
= 25°C
T
= 75°C
J
T
= 125°C
= 175°C
T
J
= 75°C
J
T
= 25°C
J
T
T
J
= 125°C
J
T = −55°C
J
−9
0
0.0
200
300
400
500
600 650
0.5
1.0
1.5
2.0
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
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2
FFSD0465A
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
70
56
42
70
56
42
28
D = 0.1
D = 0.2
D = 0.3
D = 0.5
28
14
0
14
0
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
Figure 4. Power Derating
T , CASE TEMPERATURE (5C)
C
C
Figure 3. Current Derating
1000
100
50
25
20
15
10
5
0
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 6. Capacitance vs. Reverse Voltage
Figure 5. Capacitive Charge vs. Reverse
Voltage
5
4
3
2
1
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
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3
FFSD0465A
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
2
1
DUTY CYCLE − DESCENDING ORDER
P
DM
0.1
0.5
t
1
0.2
t
2
0.1
NOTES:
(t) = r(t) × R
0.05
0.01
Z
q
q
JC
JC
0.02
0.01
R
q
= 2.46°C/W
JC
Peak T = P
× Z
q
(t) + T
JC C
J
DM
Duty cycle, D = t /t
1
2
SINGLE PULSE
0.001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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