FFPF15S60STU [ONSEMI]
15A，600V，STEALTH™ II 二极管;
| 型号： | FFPF15S60STU |
| 厂家： | 
ONSEMI |
| 描述： | 15A，600V，STEALTH™ II 二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
15 A, 600 V, STEALTHtꢀII
Diode
FFPF15S60S
1. Cathode
2. Anode
Description
The FFPF15S60S is STEALTHt II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion−implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power switching applications.
Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
1. Cathode
2. Anode
1
2
TO−220F−2L
CASE 221AS
Features
• Stealth Recovery T = 35 ns (@ I = 15 A)
rr
F
MARKING DIAGRAM
• Max Forward Voltage, V = 2.6 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Improved dv/dt Capability
• This Device is Pb−Free and is RoHS Compliant
Applications
$Y&Z&3&K
F15S60S
• General Purpose
• Switching Mode Power Supply
• Boost Diode in Continuous Mode Power Factor Corrections
• Power Switching Circuits
$Y
&Z&3
&K
= onsemi Logo
= Date Code (Year & Week)
= Lot
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
Parameter
Value
Unit
F15S60S
= Specific Device Code
V
RRM
V
RWM
V
R
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
V
V
V
ORDERING INFORMATION
Device
Package
Shipping
50 / Tube
Average Rectified Forward Current
I
15
A
F(AV)
FSM
@ T = 52_C
FFPF15S60STU TO−220F−2L
C
I
Non−repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
150
A
_C
T , T
STG
Operating and Storage Temperature
Range
− 65 to +175
J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2022 − Rev. 2
FFPF15S60S/D
FFPF15S60S
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Maximum Thermal Resistance, Junction to Case
4.6
_C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Symbol
Parameter
Min.
Typ.
Max
Unit
I = 15 A
I = 15 A
F
T = 25_C
V
FM
(Note 1)
−
−
2.1
1.6
2.6
−
V
F
C
T = 125_C
C
V = 600 V
V = 600 V
R
T = 25_C
I
(Note 1)
−
−
−
−
100
500
mA
R
C
RM
T = 125_C
C
I =1 A, di /dt = 100 A/ms, V = 30 V
T = 25_C
C
t
rr
−
21
30
ns
F
F
R
I = 15 A, di /dt = 200 A/ms, V = 390 V
T = 25_C
C
−
−
−
−
23
2.5
0.7
29
35
−
−
F
F
R
t
ns
A
rr
I
rr
S factor
Q
−
nC
rr
I = 15 A, di /dt = 200 A/ms, V = 390 V
T = 125_C
C
−
−
−
−
55
4.3
1.1
118
−
−
−
−
F
F
R
t
ns
A
rr
I
rr
S factor
Q
nC
mJ
rr
W
AVL
Avalanche Energy (L = 40 mH)
20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%
TEST CIRCUIT AND WAVEFORMS
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFPF15S60S
TYPICAL PERFORMANCE CHARACTERISTICS
100
70
10
TC = 125oC
T
C = 125oC
10
TC = 75oC
TC =75oC
TC = 25oC
1
0.1
1
TC = 25oC
200
0.01
0.1
0
1
2
3
4
10
100
300
400
500
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 3. Typical Forward Voltage Drop vs.
Forward Current
Figure 4. Typical Reverse Current vs.
Reverse Voltage
180
60
50
40
30
20
TC = 125oC
IF = 15A
Typical Capacitance
at 0V = 180 pF
150
120
90
TC = 75oC
TC = 25oC
60
30
0.1
1
10
100
100
200
300
400
500
600
Reverse Voltage, VR [V]
diF /dt [A/ms]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time vs. di/dt
7
20
6
5
4
3
2
1
TC = 125oC
16
12
TC = 75oC
TC = 25oC
DC
8
4
IF = 15A
500 600
0
100
200
300
400
25
50
75
100
125
150
Case temperature, TC [oC]
diF/dt [A/ms]
Figure 8. Forward Current Derating Curve
Figure 7. Typical Reverse Recovery Current
vs. di/dt
STEALTH is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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