FFD10UP20S [ONSEMI]
10A，200V，超快二极管;
| 型号： | FFD10UP20S |
| 厂家： | 
ONSEMI |
| 描述： | 10A，200V，超快二极管 超快软恢复二极管 快速软恢复二极管 |
| 文件： | 总7页 (文件大小：598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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June 2016
FFD10UP20S
10 A, 200 V, Ultrafast Diode
Description
Features
The FFD10UP20S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use as
freewheeling and clamping diodes in a variety of switching power
supplies and other power switching applications. It is specially
suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
•
•
•
•
Ultrafast Recovery, Trr = 20.8 ns (@ IF = 10 A)
Max Forward Voltage, VF = 1.15 V (@ TC = 25°C)
Reverse Voltage : VRRM = 200 V
Avalanche Energy Rated
•
RoHS Compliant
Applications
•
•
•
SMPS, Power Switching Circuits
Output Rectifiers
Freewheeling Diodes
4
1
2
1,4 Cathode 3. Anode
TO-252
(D-PAK)
3
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
VRWM
IF(AV)
Parameter
Rating
200
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
200
V
Average Rectified Forward Current
@ TC = 115oC
10
A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
IFSM
100
A
TJ, TSTG
Operating and Storage Temperature Range
-65 to +175
oC
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
Unit
oC/W
RJC
3.0
Package Marking and Ordering Information
Part Number Top Mark
Package
Packing Method Reel Size
Tape Width
Quantity
FFD10UP20S
F10UP20S
TO-252(D-PAK)
Reel
13" Dia
N/A
2500
©2008 Fairchild Semiconductor Corporation
FFD10UP20S Rev. 1.7
1
www.fairchildsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
Maximum Instantaneous Forward Voltage
IF = 10 A
IF = 10 A
VF*
TC = 25oC
C = 100oC
TC = 25oC
C = 100oC
-
-
-
-
1.15
1.10
V
T
Maximum Instantaneous Reverse Current
@ rated VR
-
-
-
-
100
500
IR*
A
T
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
trr
Irr
Qrr
-
-
-
20.8
2.8
28.5
-
-
-
ns
A
nC
(IF = 10 A, diF/dt = 200 A/s, VR=130 V)
Maximum Reverse Recovery Time
(IF = 1 A, diF/dt = 100 A/s)
trr
-
-
-
35
-
ns
WAVL
Avalanche Energy ( L = 40 mH)
10
mJ
* Pulse Test: Pulse Width = 300s, Duty Cycle = 2%
*
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2008 Fairchild Semiconductor Corporation
FFD10UP20S Rev. 1.7
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
vs. Forward Current
Figure 4. Typical Reverse Current vs.
Reverse Voltage
1000
50
TC = 100oC
100
10
TC = 100oC
TC = 25oC
10
TC = 25oC
1
1
0.1
0.0
0.1
0.5
1.0
1.5
2.0
10
40
80
120
160
200
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
vs. di /dt
F
40
35
30
25
20
150
IF = 10A
Typical Capacitance
at 0V = 129 pF
120
TC = 100oC
90
60
30
0
TC = 25oC
10-1
100
Reverse Voltage, VR [V]
101
102
50
100
150
200
250
diF/dt [A/s]
Figure 7. Typical Reverse Recovery
Figure 8. Forward Current Derating Curve
Current vs. di /dt
F
6
5
4
3
2
1
0
32
28
24
20
16
IF = 10A
TC = 100oC
DC
12
= 25oC
8
4
0
T
C
25
50
75
100
125
150
o
50
100
150
200
250
Case temperature, TC [ C]
diF/dt [A/s]
©2008 Fairchild Semiconductor Corporation
FFD10UP20S Rev. 1.7
www.fairchildsemi.com
3
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Rev. I77
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