FFB20UP30DNTM [ONSEMI]
20A，300V，Ultrafast 双二极管;
| 型号： | FFB20UP30DNTM |
| 厂家： | 
ONSEMI |
| 描述： | 20A，300V，Ultrafast 双二极管 二极管 |
| 文件： | 总6页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2016
FFB20UP30DN
20 A, 300 V, Ultrafast Dual Diode
Features
Ultrafast Recovery, trr = 45 ns (@ IF = 10 A)
•
Max Forward Voltage, VF = 1.3 V (@ TC = 25°C)
Description
•
Reverse Voltage : VRRM = 300 V
•
The FFB20UP30DN is an ultrafast dual diode with low forward
voltage drop and rugged UIS capability. This device is intended
for use as freewheeling and clamping diodes in a variety of
switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
industrial applicationa as welder application.
Avalanche Energy Rated
•
RoHS Compliant
•
Applications
•
•
•
•
General Purpose
SMPS,Welder
Free-Wheeling Diode for Motor Application
Power Switching Circuits
3
1
2
TO-263AB/D2-PAK
1. Anode 2. Cathode 3. Anode
1
1.Anode 2.Cathode 3.Anode
(per diode) T = 25°C unless otherwise noted
C
Absolute Maximum Ratings
Symbol
Parameter
Ratings
300
Unit
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
300
V
300
V
IF(AV)
Average Rectified Forward Current (per Diode)
@TC = 130°C
10
A
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
180
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +175
°C
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
Unit
RθJC
2.0
°C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size
Tape Width
Quantity
D2-PAK
Reel
N/A
F20UP30DN
FFB20UP30DNTM
13" Dia
800
©2006 Fairchild Semiconductor Corporation
Rev. 1.9
1
www.fairchildsemi.com
FFB20UP30DN
Electrical Characteristics (per diode) T = 25°C unless otherwise noted
C
Symbol
VF *
Parameter
Min.
Typ.
Max.
Unit
IF = 10 A
IF = 10 A
T
C = 25 °C
-
-
-
-
1.3
1.2
V
V
TC = 150 °C
IR
VR = 300 V
VR = 300 V
T
C = 25 °C
-
-
-
-
1
500
µA
µA
*
TC = 150 °C
Trr
IF =0.5 A, Irr=1 A, VCC = 30 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V IF
=10 A, diF/dt = 200 A/µs, VR = 195 V
T
C = 25 °C
TC = 25 °C
C = 25 °C
-
-
-
-
-
-
30
35
45
ns
ns
ns
T
ta
TC = 25 °C
C = 25 °C
TC = 25 °C
-
-
-
11
13
20
-
-
-
ns
ns
nC
IF =10 A, diF/dt = 200 A/µs, VR = 195V
tb
T
Qrr
WAVL
Avalanche Energy (L = 20 mH)
20
-
-
mJ
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2006 Fairchild Semiconductor Corporation
Rev. 1.9
2
www.fairchildsemi.com
FFB20UP30DN
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
20
10
1
10
TC = 100oC
TC = 100oC
TC = 25oC
0.1
1
TC = 25oC
0.01
0.001
0.1
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
250
300
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
400
36
Typical Capacitance
at 0V = 197. 2 pF
IF = 10A
Tc = 25oC
32
28
24
100
10
0.1
1
10
100
100
200
300
400
500
Reverse Voltage , VR [V]
diF/dt [A/µs]
Figure 7. Typical Reverse Recovery Current
Figure 8. Forward Current Deration Curve
5
14
12
10
IF = 10A
TC = 25oC
4
3
2
1
0
8
DC
6
4
2
0
100
200
300
400
500
100
110
120
130
140
150
Case Temperature, TC [oC]
diF/dt [A/µs]
©2006 Fairchild Semiconductor Corporation
Rev. 1.9
3
www.fairchildsemi.com
FFB20UP30DN
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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