FFAF30UA60S [ONSEMI]
30A，600V，Ultrafast II 单二极管;
| 型号： | FFAF30UA60S |
| 厂家： | 
ONSEMI |
| 描述： | 30A，600V，Ultrafast II 单二极管 二极管 |
| 文件： | 总5页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFAF30UA60S
30 A, 600 V, UltrafastꢀII
Single Diode
The FFAF30UA60S is an Ultrafast ll dual diode with low forward
voltage drop and rugged UIS capability. This device is intended for
use as freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It is
specifically suited for use in switching power supplies and industrial
application as welder and UPS application.
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30 A, 600 V ULTRAFAST II
RECTIFIER
Features
• Ultrafast Recovery, T < 90 ns (@ I = 30 A)
rr
F
• Max Forward Voltage, V = 2.2 V (@ T = 25°C)
F
C
3
2
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Boost Diode in PFC and SMPS
• Welder, UPS, and Motor Control Application
ABSOLUTE MAXIMUM RATINGS
Per leg at T = 25°C unless otherwise noted
C
1
Rating
Symbol
Value
600
600
600
30
Unit
V
TO−3PF
CASE 340AH
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
MARKING DIAGRAM
Average Rectified Forward Current
I
A
F(AV)
(Rated V , T = 45°C)
R
C
Non−repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
I
180
A
FSM
Operating and Storage Temperature
Range
T , T
−65 to
+175
°C
J
STG
F30UA60S
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
N/A
C
A
F30UA60S = Specific Device Code
ORDERING INFORMATION
Device
FFAF30UA60S
Package
Shipping
30 / Rail
TO−3PF
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2019 − Rev. 1
FFAF30UA60S/D
FFAF30UA60S
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction−to−Case, Steady State
2.4
_C/W
q
JC
2
(Assumes 600 mm 1 oz. copper bond pad, on an FR4 board)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
I = 30 A, T = 25°C
Min
Typ
Max
Unit
V
FM
1
Instantaneous Forward Voltage
−
−
−
−
2.2
2.0
V
F
C
I = 30 A, T = 125°C
F
C
I
1
Instantaneous Reverse Current
Reverse Recovery
V
V
= 600 V, T = 25°C
−
−
−
−
100
150
mA
RM
R
R
C
= 600 V, T = 125°C
C
Trr
Irr
I = 30 A, di /dt = 200/ms, T = 25°C
F
−
−
−
−
−
−
90
8
Ns
A
F
C
Qrr
−
360
−
nC
mJ
W
Avalanche Energy
L = 40 mH
20
AVL
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFAF30UA60S
TYPICAL CHARACTERISTICS
10
100
10
1
TC = 125oC
TC = 75oC
T
C = 125oC
1
TC = 25oC
TC = 75oC
0.1
TC = 25oC
0.01
0.1
100
200
300
400
500
600
0.0
0.5
1.0
1.5
2.0
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 3. Typical Forward Voltage Drop vs.
Forward Current
Figure 4. Typical Reverse Current vs. Reverse
Voltage
150
200
IF = 30A
TC = 125oC
Typical Capacitance
at 0V = 205pF
120
150
100
50
TC = 75oC
90
60
T
C = 25oC
30
0
0
0.1
1
10
100
100
200
diF/dt [A/ms]
300
400
Reverse Voltage, VR [V]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time vs.
diF/dt
40
12
TC = 125oC
30
20
10
0
9
TC = 75oC
6
TC = 25oC
3
I
F = 30A
0
100
200
diF/dt [A/ ms]
300
400
25
50
75
100
125
150
175
Case temperature, TC [oC]
Figure 7. Typical Reverse Recovery Current
vs. diF/dt
Figure 8. Forward Current Derating Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3PF−3L
CASE 340AH
ISSUE A
DATE 09 JAN 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
SEATING
PLANE
P
A
E
A1
Q
H1
MILLIMETERS
DIM MIN
MAX
5.70
3.20
3.50
2.20
0.95
2.15
4.20
1.10
24.70
25.30
3.70
15.70
5.55
10.20
19.50
5.20
2.20
3.80
4.70
A
A1
A2
A3
b
5.30
2.80
3.10
1.80
0.65
1.90
3.80
0.80
24.30
D
b2
b3
c
D2
D
L2
D3
D2 24.70
L1
D3
E
3.30
15.30
5.35
9.80
19.10
4.80
1.90
3.40
4.30
e
H1
L
L1
L2
P
NOTE 3
L
Q
1
2
3
c
3X b
3X b2
A3
A2
b3
e
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79755E
TO−3PF−3L
PAGE 1 OF 1
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