FEP16ATD [ONSEMI]
Rectifier Diode;
| 型号： | FEP16ATD |
| 厂家： | 
ONSEMI |
| 描述： | Rectifier Diode 局域网 二极管 |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PIN 1
PIN 3
+
CASE
PIN 2
FEP16AT - FEP16JT
Positive CT
Features
PIN 1
PIN 3
-
CASE
PIN 2
• Low forward voltage drop.
• High surge current capacity.
• High current capability.
• High reliability.
Negative CT
Suffix "A"
1
2
PIN 1
PIN 3
3
AC
TO-220AB
CASE
PIN 2
Doubler
Suffix "D"
• Average Forward Current Rating at 16A (8A per Diode).
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value
Symbol
Units
Parameter
16AT 16BT 16CT 16DT 16FT 16GT
16HT
16JT
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
50
100 150 200 300
400
500
600
V
A
A
16
.375 " lead length @ T = 100 C
°
A
Non-repetitive Peak Forward Surge
Current
200
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
-55 to +150
-55 to +150
C
°
Tstg
TJ
Operating Junction Temperature
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
8.33
15
W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
RθJA
RθJL
°C/W
°C/W
2.2
Electrical Characteristics
TA = 25°C unless otherwise noted
Device
Symbol
Units
Parameter
16AT 16BT 16CT 16DT 16FT 16GT
16HT
16JT
VF
trr
Forward Voltage @ 8.0A
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
0.95
35
1.3
1.5
V
50
ns
IR
Reverse Current @ rated VR
TA = 25°C
10
500
µA
µA
TA = 100°C
CT
Total Capacitance
VR = 4.0. f = 1.0 MHz
pF
85
60
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
Typical Characteristics
200
160
120
80
20
16
12
SINGLE PHASE
HALF WAVE
60HZ
8
RESISTIVE OR
INDUCTIVE LOAD
4
0
.375" (9.0mm) LEAD
LENGTHS
40
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Ambient Temperature [ºC]
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
1000
100
FEP16AT-FEP16DT
100
10
T
= 100 C
º
FEP16FT-FEP16JT
A
10
1
1
0.1
T
= 25ºC
A
T
= 25ºC
A
Pulse Width = 300µs
2% Duty Cycle
0.1
0.01
0.4
0
20
40
60
80
100
120
140
0.6
0.8
1
1.2
1.4
1.6
1.8
Percent of Rated Peak Reverse Voltage [%]
Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
100
90
80
70
FEP16AT-FEP16DT
60
FEP16FT-FEP16JT
50
40
1
2
5
10
20
50
100
Reverse Voltage, V [V]
R
Figure 5. Total Capacitance
50Ω
50Ω
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
0
Pulse
Generator
(Note 2)
50V
(approx)
-0.25A
(+)
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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