FDV302P [ONSEMI]
数字 FET，P 沟道，-25V，-0.12A，10Ω;
| 型号： | FDV302P |
| 厂家： | 
ONSEMI |
| 描述： | 数字 FET，P 沟道，-25V，-0.12A，10Ω |
| 文件： | 总7页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Digital FET, P-Channel
-25 V, -0.12 A, 10 W
SOT−23−3
CASE 318−08
FDV302P
D
General Description
This P−Channel logic level enhancement mode field effect
transistor is produced using our proprietary, high cell density, DMOS
technology. This very high density process is especially tailored to
minimize on−state resistance. This device has been designed
especially for low voltage applications as a replacement for digital
transistors. Since bias resistors are not required, this one P−channel
FET can replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.
G
S
MARKING DIAGRAM
Features
&E&Y
302P&G
• −25 V, −0.12 A Continuous, −0.5 A Peak
♦ R
♦ R
= 13 W @ V = −2.7 V
GS
DS(on)
= 10 W @ V = −4.5 V
DS(on)
GS
&E
&Y
= Designates Space
= Binary Calendar Year
Coding Scheme
• Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. V < 1.5 V
GS(th)
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body
Model
302P
&G
= Specific Device Code
= Date Code
• Compact Industry Standard SOT−23 Surface Mount Package
ORDERING INFORMATION
• Replace Many PNP Digital Transistors (DTCx and DCDx) with One
†
DMOS FET
• This Device is Pb−Free and Halide Free
Device
FDV302P
Package
Shipping
3000 /
Tape & Reel
SOT−23−3
(Pb−Free,
Halide−Free)
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Drain−Source Voltage
Value
−25
Unit
V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
DSS
GSS
V
Gate−Source Voltage
−8
V
I
D
Drain Current − Continuous
Drain Current − Pulsed
−0.12
−0.5
A
P
D
Maximum Power Dissipation
0.35
W
T , T
Operating and Storage Temperature
Range
−55 to 150
°C
J
STG
ESD
Electrostatic Discharge Rating
MIL−STD−883D Human Body Model
(100 pF/1500 W)
6.0
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient
357
°C/W
θ
JA
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
March, 2022 − Rev. 2
FDV302P/D
FDV302P
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
I
= 0 V, I = −250 mA
−25
−
−
−20
−
−
−
V
DSS
GS
D
DBV
/DT
= −250 mA, Referenced to 25°C
mV/°C
mA
DSS
J
D
I
V
DS
V
DS
V
GS
= −20 V, V = 0 V
−
−1
DSS
GS
= −20 V, V = 0 V, T = 55°C
−
−
−10
−100
GS
J
I
Gate − Body Leakage Current
= −8 V, V = 0 V
−
−
nA
GSS
DS
ON CHARACTERISTICS (Note 1)
DV
/DT
Gate Threshold Voltage Temp.
Coefficient
I
D
= −250 mA, Referenced to 25°C
−
1.9
−
mV/°C
GS(th)
J
V
Gate Threshold Voltage
V
V
V
V
= V , I = −250 mA
−0.65
−1
10.6
7.9
12
−1.5
13
V
GS(th)
DS
GS
GS
GS
GS
D
R
Static Drain−Source On−Resistance
= −2.7 V, I = −0.05 A
−
−
−
W
DS(on)
D
= −4.5 V, I = −0.2 A
10
D
= −4.5 V, I = −0.2 A,
18
D
T = 125°C
J
I
On−State Drain Current
V
GS
V
DS
= −2.7 V, V = −5 V
−0.05
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −0.2 A
−
0.135
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −10 V, V = 0 V,
−
−
−
11
7
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
1.4
rss
SWITCHING CHARACTERISTICS (Note 1)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −6 V, I = −0.2 A,
−
−
−
−
−
−
−
5
8
12
16
18
10
0.31
−
ns
D(on)
DD
GS
D
= −4.5 V, R
= 50 W
GEN
t
r
t
9
D(off)
t
f
5
Q
V
DS
V
GS
= −5 V, I = −0.2 A,
0.22
0.11
0.04
nC
g
D
= −4.5 V
Q
gs
Q
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.2 A (Note 1)
I
−
−
−
−0.2
−1.5
A
V
S
V
SD
V
GS
−1
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDV302P
TYPICAL CHARACTERISTICS
0.2
0.15
0.1
2
V
GS
= −5.0 V
−4.5
−4.0
V
GS
= −2.0 V
−3.5
−3.0
−2.7
1.5
−2.5
−2.5
−2.7
−3.0
−3.5
−4.0
1
−2.0
0.05
−4.5
0.5
0
0
1
2
3
4
0
0.05
0.1
0.15
0.2
−V , Drain−Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
25
1.6
1.4
I
V
= −0.05 A
D
I
D
= −0.05 A
= −2.7 V
GS
20
15
1.2
1.0
0.8
125°C
10
5
T = 25°C
A
0
0.6
−50
−25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
7
8
T , Junction Temperature (5C)
−V , Gate to Source Voltage (V)
GS
J
Figure 3. On−Resistance Variation with Temperature
Figure 4. On Resistance Variation with
Gate−To−Source Voltage
0.08
0.5
0.1
V
GS
= 0 V
V
DS
= −5 V
T = 125°C
J
25°C
0.06
0.04
0.02
T = −55°C
A
125°C
−55°C
25°C
0.01
0.001
0
0.0001
0.5
1
1.5
2
2.5
3
0.2
0.4
0.6
0.8
1
1.2
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDV302P
TYPICAL CHARACTERISTICS (continued)
8
25
I
D
= −0.2 A
V
DS
= −5 V
−10 V
15
10
C
iss
6
4
2
0
−15 V
C
oss
5
3
2
C
rss
f = 1 MHz
V
GS
= 0 V
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.3
1
2
5
10 15 25
Q , Gate Charge (nC)
g
−V , Drain to Source Voltage (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1
5
4
Single Pulse
1 ms
R
= 357°C/W
q
0.5
JA
T = 25°C
A
R
Limit
DS(on)
0.2
0.1
10 ms
3
2
1
100 ms
0.05
V
= −2.7 V
GS
Single Pulse
R
T = 25°C
A
1 s
DC
= 357°C/W
q
0.02
0.01
JA
0
1
2
5
10
15 20
30 40
0.001
0.01
0.1
1
10
100 300
−V , Drain−Source Voltage (V)
DS
Single Pulse Time (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
0.5
0.2
0.1
R
R
(t) = r(t) * R
= 357°C/W
q
q
q
JA
JA
JA
0.1
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t
1
t
2
0.005
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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