FDS9958 [ONSEMI]
-60V双P沟道PowerTrench® MOSFET;
| 型号： | FDS9958 |
| 厂家： | 
ONSEMI |
| 描述： | -60V双P沟道PowerTrench® MOSFET 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2007
FDS9958
tm
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
RoHS Compliant
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
G2
S2
G1
S1
4
3
D2
D2
5
6
7
8
D1
D1
Q2
Q1
G2
D1
D1
2
1
S2
G1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-60
V
V
±20
(Note 1a)
(Note 3)
-2.9
ID
A
-12
EAS
Single Pulse Avalanche Energy
54
mJ
Power Dissipation for Dual Operation
Power Dissipation
2
1.6
PD
(Note 1a)
(Note 1b)
W
Power Dissipation
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDS9958
FDS9958
SO-8
330mm
2500units
1
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -48V,
-60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-52
mV/°C
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TJ = 125°C
-100
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1.0
-1.6
4
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
VGS = -10V, ID = -2.9A
82
105
135
190
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -4.5V, ID = -2.5A
VGS = -10V, ID = -2.9A, TJ= 125°C
VDD = -5V, ID = -2.9A
103
131
7.7
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
765
90
1020
120
65
pF
pF
pF
VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
40
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
3
12
10
43
12
23
12
ns
ns
VDD = -30V, ID = -2.9A,
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
27
6
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
16
8
nC
nC
nC
nC
VDD = -30V,
ID = -2.9A
Qg
VGS = 0V to -4.5V
Qgs
Qgd
2
3
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -1.3A (Note 2)
-0.8
26
-1.2
42
V
ns
nC
IF = -2.9A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
21
35
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T = 25°C, L = 3mH, I = 6A, V = 60V, V = 10V.
J
AS
DD
GS
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
2
Typical Characteristics TJ = 25°C unless otherwise noted
12
2.5
2.0
1.5
1.0
0.5
VGS = -4V
VGS = -10V
VGS = -3.5V
10
8
VGS = -3V
VGS = -3.5V
VGS = -5V
VGS = -4V
VGS = -4.5V
6
VGS = -3V
4
VGS = -5V
VGS = -4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = -10V
2
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
0
0
2
4
6
8
10
12
0
1
2
3
4
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
ID = -2.9A
ID = -2.9A
GS = -10V
210
180
150
120
90
V
TJ = 125oC
TJ = 25oC
60
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
20
12
10
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 0V
10
8
VDD = -5V
1
TJ = 150oC
TJ = 25oC
6
0.1
0.01
1E-3
4
TJ = 150oC
TJ = 25oC
TJ = -55oC
2
TJ = -55oC
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
2000
1000
ID = -2.9A
8
6
4
2
0
VDD = -20V
Ciss
VDD = -30V
100
Coss
VDD = -40V
Crss
f = 1MHz
= 0V
V
GS
10
0.1
1
10
60
0
5
10
Q , GATE CHARGE(nC)
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
4
3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = -4.5V
VGS = -10V
TJ = 25oC
2
TJ = 125oC
R
θJA = 78oC/W
1
0.01
0.1
1
10
100
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
20
200
10
VGS = -10V
100
0.1ms
1ms
SINGLE PULSE
θJA = 135oC/W
A = 25oC
R
T
1
10ms
10
THIS AREA IS
LIMITED BY rDS(on)
100ms
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
1s
10s
DC
1
0.5
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
200
100
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 135oC/W
1
2
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
0.01
0.005
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
5
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