FDS6990AS_技术文档

Is Now Part of

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Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

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is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M

March 2010

FDS6990AS

Dual 30V N-Channel PowerTrench^®SyncFET™

Features

General Description

■ 7.5 A, 30 V.

R

= 22 mΩ @ V = 10 V

The FDS6990AS is designed to replace a dual SO-8 MOSFET

and two Schottky diodes in synchronous DC:DC power sup-

plies. This 30V MOSFET is designed to maximize power con-

DS(ON)

GS

= 28 mΩ @ V = 4.5 V

GS

■ Includes SyncFET Schottky diode

version efﬁciency, providing a low R

and low gate charge.

DS(ON)

■ Low gate charge (10nC typical)

Each MOSFET includes integrated Schottky diodes using Fair-

child’s monolithic SyncFET technology. The performance of the

FDS6990AS as the low-side switch in a synchronous rectiﬁer is

similar to the performance of the FDS6990A in parallel with a

Schottky diode.

■ High performance trench technology for extremely low

R

DS(ON)

■ High power and current handling capability

Applications

■ DC/DC converter

■ Motor drives

D1

5

6

7

8

4

3

2

1

Q1

Q2

D2

G1

SO-8

S1

G2

Pin 1

S2

Absolute Maximum Ratings T =25°C unless otherwise noted

A

Symbol

Parameter

Ratings

Units

V

Drain-Source Voltage

Gate-Source Voltage

30

V

A

DSS

V

20

GSS

I

Drain Current

– Continuous

– Pulsed

(Note 1a)

7.5

D

20

P

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

2

W

D

(Note 1a)

(Note 1b)

(Note 1c)

1.6

1

0.9

T , T

Operating and Storage Junction Temperature Range

–55 to +150

°C

J

STG

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

78

40

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6990AS

13"

12mm

2500 units

FDS6990AS Rev. A2

1

www.fairchildsemi.com

Electrical Characteristics T = 25°C unless otherwise noted

A

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

V

I

= 0 V, I = 1 mA

30

V

DSS

GS

D

∆BV^DSS

∆T

Breakdown Voltage Temperature

Coefﬁcient

= 1 mA, Referenced to 25°C

31

mV/°C

D

J

I

Zero Gate Voltage Drain Current

Gate–Body Leakage

V

= 24 V, V = 0 V

500

100

µA

DSS

DS

GS

I

=

20 V, V = 0 V

nA

GSS

GS

DS

On Characteristics (Note 2)

V

Gate Threshold Voltage

V

I

= V , I = 1 mA

1

1.7

–3

3

V

GS(th)

DS

GS

D

∆V^GS(th)

Gate Threshold Voltage

Temperature Coefﬁcient

= 1 mA, Referenced to 25°C

mV/°C

D

∆T

J

R

Static Drain–Source

On–Resistance

V

= 10 V, I = 7.5 A

17

26

21

22

35

28

mΩ

DS(on)

GS

D

= 10 V, I = 7.5 A, T = 125°C

GS

D

J

= 4.5 V, I = 6.5 A

D

I

On–State Drain Current

V

= 10 V, V = 5 V

20

A

S

D(on)

GS

DS

g

Forward Transconductance

= 15 V, I = 10 A

29

FS

D

Dynamic Characteristics

C

R

Input Capacitance

V

= 15 V, V = 0 V,

550

162

60

pF

Ω

iss

oss

rss

G

DS

GS

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V

= 15 mV, f = 1.0 MHz

3.1

GS

Switching Characteristics (Note 2)

t

Turn–On Delay Time

Turn–On Rise Time

V

= 15 V, I = 1 A,

8

5

16

10

38

8

ns

d(on)

DS

GS

D

= 10 V, R

= 6 Ω

GEN

r

Turn–Off Delay Time

Turn–Off Fall Time

24

4

ns

d(off)

n s

ns

f

Turn–On Delay Time

Turn–On Rise Time

V

= 15 V, I = 1 A,

9

18

16

24

10

14

8

d(on)

DS

GS

D

= 4.5 V, R

= 6 Ω

GEN

8

ns

r

Turn–Off Delay Time

Turn–Off Fall Time

14

5

ns

d(off)

f

ns

Q

Total Gate Charge at Vgs = 10V

Total Gate Charge at Vgs = 5V

Gate–Source Charge

Gate–Drain Charge

V

= 15 V, I = 10 A, V = 5 V

10

6

nC

g(TOT)

DD

D

GS

g

1.5

2.0

gs

gd

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

I

2.9

0.7

A

V

S

V

Drain–Source Diode Forward

Voltage

V

= 0 V, I = 2.3 A

(Note 2)

(Note 3)

0.6

SD

GS

S

t

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I = 10A,

18

11

nS

nC

rr

F

Q

d /d = 300 A/µs

iF t

rr

2

www.fairchildsemi.com

FDS6990AS Rev. A2

Notes:

1.

R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user's board design.

θCA

a) 78°C/W when mounted

on a 0.5 in pad of 2 oz

copper

b) 125°C/W when

mounted on a 0.02 in

pad of 2 oz copper

c) 135°C/W when

mounted on a

minimum pad.

2

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

4

3

www.fairchildsemi.com

FDS6990AS Rev. A2

Typical Characteristics

20

2

1.8

1.6

1.4

1.2

1

V_GS= 10V

4.5V

3.5V

V_GS= 3.0V

4.0V

15

10

5

3.0V

3.5V

4.0V

4.5V

5.0V

6.0V

10V

2.5V

0

0.8

0

0.5

1

1.5

2

0

4

8

12

16

20

V

_DS, DRAIN-SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

1

0.07

0.06

0.05

0.04

0.03

0.02

0.01

I_D= 7.5A

V_GS= 10V

I_D= 3.75A

T_A= 125^oC

0.8

0.6

T_A= 25^oC

-50

-25

0

25

50

75

100

125

150

2

4

6

8

10

T_J, JUNCTION TEMPERATURE (^oC)

V

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

16

12

8

100

V_GS= 0V

V_DS= 5V

10

1

T_A= 125^o

C

0.1

25^oC

T_A= 125^oC

-55^oC

4

0.01

25^oC

0

0.001

1.5

2

2.5

3

3.5

0

0.2

0.4

0.6

0.8

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

4

www.fairchildsemi.com

FDS6990AS Rev. A2

Typical Characteristics

1000

10

I_D=7.5A

8

V_DS= 10V

C_iss

20V

6

4

2

0

15V

100

C_oss

C_rss

f = 1 MHz

= 0 V

V

GS

20

0.1

1

10

30

0

2

4

6

8

10

12

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

50

40

30

20

10

0

100

10

SINGLE PULSE

R_θ_JA= 135°C/W

T_A= 25°C

R_DS(ON)LIMIT

100µs

1ms

10ms

100s

1s

1

10s

DC

V_GS= 10V

SINGLE PULSE

R_θ_JA= 135^oC/W

T_A= 25^oC

0.1

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

Rθ_JA(t) = r(t) * Rθ

JA

0.2

Rθ_JA= 135 °C/W

0.1

0.05

P(pk)

0.02

t₁

0.01

t₂

T_J– T_A= P * R

Duty Cycle, D = t₁/ t₂

0.01

θ_JA(t)

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

1

10

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

5

www.fairchildsemi.com

FDS6990AS Rev. A2

Typical Characteristics (continued)

Schottky barrier diodes exhibit signiﬁcant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

SyncFET Schottky Body Diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in paral-

lel with PowerTrench MOSFET. This diode exhibits similar char-

acteristics to a discrete external Schottky diode in parallel with a

MOSFET. Figure 12 shows the reverse recovery characteristic

of the FDS6990AS.

0.1

0.01

T_A= 125°C

0.001

T_A= 100°C

0.0001

0.00001

T_A= 25°C

0.000001

0

5

10

15

20

25

30

V_DS, REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse leakage

versus drain-source voltage and temperature.

12.5nS/Div

Figure 12. FDS6990AS SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an equivalent size

MOSFET produced without SyncFET (FDS6990A).

12.5nS/Div

Figure 13. Non-SyncFET (FDS6990A) body

diode reverse recovery characteristic.

6

www.fairchildsemi.com

FDS6990AS Rev. A2

Typical Characteristics (continued)

L

V_DS

BV_DSS

t_P

V_GS

V_DS

+

–

R_GE

DUT

I_AS

V_DD

0V

V_GS

tp

I_AS

vary t_Pto obtain

required peak I_AS

0.01Ω

t_AV

Figure 15. Unclamped Inductive

Load Test Circuit

Figure 16. Unclamped Inductive

Waveforms

Drain Current

Same type as DUT

+

50k

10V

10 F

-

1 F

+

V_DD

Q_G(TOT)

–

V_GS

10V

V_GS

DUT

Q_GD

Q_GS

I_g(REF)

Charge, (nC)

Figure 17. Gate Charge Test Circuit

Figure 18. Gate Charge Waveform

t_ON

t_OFF

t_d(ON)

t_d(OFF)

R_L

t_f

V_DS

t_r

V_DS

90%

+

V_GS

10%

0V

V_DD

R_GEN

DUT

–

90%

50%

V_GS

50%

V_GS

Pulse Width ≤ 1µs

Duty Cycle ≤ 0.1%

Pulse Width

10%

0V

Figure 19. Switching Time

Test Circuit

Figure 20. Switching Time Waveforms

7

www.fairchildsemi.com

FDS6990AS Rev. A2

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

®

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

FRFET

PowerTrench

PowerXS™

The Power Franchise

SM

®

Global Power Resource

Green FPS™

Green FPS™ e-Series™

Gmax™

Programmable Active Droop™

tm

TinyBoost™

TinyBuck™

TinyCalc™

®

QFET

QS™

GTO™

Quiet Series™

RapidConfigure™

™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

®

TinyLogic

Current Transfer Logic™

TINYOPTO™

TinyPower™

TinyPWM™

®

DEUXPEED

Dual Cool™

Saving our world, 1mW/W/kW at a time™

SignalWise™

®

EcoSPARK

TinyWire™

EfficentMax™

MicroPak™

SmartMax™

TriFault Detect™

TRUECURRENT™*

μSerDes™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptiHiT™

SMART START™

®

tm

SPM

®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

Fairchild

®

Fairchild Semiconductor

FACT Quiet Series™

®

UHC

®

OPTOLOGIC

FACT

FAST

®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

®

OPTOPLANAR

®

FastvCore™

FETBench™

FlashWriter

FPS™

tm

®

*

PDP SPM™

Power-SPM™

F-PFS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I47

www.fairchildsemi.com

FDS6990AS Rev. A2

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FDS6990AS
厂家：	ONSEMI
描述：	双 N 沟道，PowerTrench® SyncFET™，30V，7.5A，22mΩ PC 开关光电二极管晶体管
文件：	总10页 (文件大小：808K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDS6990AS [ONSEMI]

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