FDS6690A-NBNP006 [ONSEMI]
单 N 沟道,逻辑电平,Power Trench® MOSFET,30V,11A,12.5mΩ;型号: | FDS6690A-NBNP006 |
厂家: | ONSEMI |
描述: | 单 N 沟道,逻辑电平,Power Trench® MOSFET,30V,11A,12.5mΩ |
文件: | 总7页 (文件大小:374K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6690A
Single N-Channel, Logic-Level, PowerTrench MOSFET
General Description
Features
This
produced
N-Channel
using
Logic
ON
Level
MOSFET
Semiconductor’s
is
• 11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V
RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
• Fast switching speed
• Low gate charge
These devices are well suited for low voltage
and battery powered applications where low in-line
power loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
±20
11
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
50
2.5
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
PD
W
1.0
EAS
Single Pulse Avalanche Energy
(Note 3)
96
mJ
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
RθJA
RθJA
RθJC
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6690A
FDS6690A
13’’
12mm
Publication Order Number:
FDS6690A/D
© 2007 Semiconductor Components Industries, LLC.
October-2017, Rev. 5
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
V
GS = 0 V,
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
25
mV/°C
IDSS
Zero Gate Voltage Drain Current
1
µA
µA
nA
10
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
IGSS
Gate–Body Leakage
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
–5
3
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS= 10 V, ID = 11 A, TJ=125°C
ID = 11 A
ID = 10 A
9.8
12.0
13.7
12.5
17.0
22.0
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 11 A
50
A
S
Forward Transconductance
48
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1205
290
115
2.4
pF
pF
pF
Ω
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
5
19
10
44
19
16
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
28
9
ns
ns
Qg
Qgs
Qgd
12
3.4
4.0
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 11 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
Voltage
VSD
VGS = 0 V,
IS = 2.1 A (Note 2)
0.74
trr
Diode Reverse Recovery Time
24
27
nS
nC
IF = 11 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 8A, VDD = 30V, VGS = 10V
www.onsemi.com
2
Typical Characteristics
50
3
2.5
2
VGS = 10V
4.0V
VGS = 3.0V
40
6.0V
3.5.V
4.5V
30
20
10
0
3.5V
1.5
1
4.0V
4.5V
6.0V
3.0V
1.5
10V
0.5
0
0.5
1
2
0
10
20
30
40
50
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.05
0.04
0.03
0.02
0.01
0
ID = 11.0A
ID = 5.5A
1.6
1.4
1.2
1
VGS = 10V
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VGS = 0V
VDS = 5V
10
40
TA = 125oC
1
0.1
30
20
10
0
25oC
-55oC
0.01
TA = 125oC
25oC
0.001
0.0001
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.onsemi.com
3
Typical Characteristics
10
1600
1200
800
400
0
f = 1MHz
VGS = 0 V
ID = 11.0A
VDS = 10V
15V
8
6
4
2
0
20V
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
100
100
1ms
10ms
100ms
1s
10s
DC
RDS(ON) LIMIT
1
10
Tj=25
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
Tj=125
0.01
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
50
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 11. Single Pulse Maximum Power Dissipation.
www.onsemi.com
4
Typical Characteristic
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 /W
0.2
0.1
0.05
0.1
0.01
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号:
FDS6690AD84Z
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6690AF011
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6690AL99Z
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FDS6690AS
Dual-Synchronous, Step-Down Controller with Out-of-Audio™ Operation and 100-mA LDOs for Notebook System Power
TI
FDS6690A_NL
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明