FDS6630A [ONSEMI]
N 沟道,逻辑电平,PowerTrenchTM MOSFET,30V,6.5A,38mΩ;![FDS6630A](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FDS6630A_2237188_icpdf.jpg)
型号: | FDS6630A |
厂家: | ![]() |
描述: | N 沟道,逻辑电平,PowerTrenchTM MOSFET,30V,6.5A,38mΩ PC 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 1999
FDS6630A
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
• 6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V
RDS(on) = 0.053 Ω @ VGS = 4.5 V
• Low gate charge (5nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• High power and current handling capability.
• DC/DC converter
• Load switch
• Motor drives
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
pin 1
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
30
V
V
A
20
±
(Note 1a)
(Note 1a)
6.5
40
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
JC
θ
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6630A
FDS6630A
13’’
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDS6630A Rev. C1
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
A
30
V
µ
DSS
Breakdown Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25 C
24
mV/ C
BV
∆
µ
°
°
∆
TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
A
µ
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
100
-100
nA
nA
(Note 2)
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
A
1
1.7
-4
3
V
µ
GS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = 250 A, Referenced to 25 C
mV/ C
V
µ
°
°
∆
TJ
∆
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.5 A
0.028 0.038
0.044 0.060
0.040 0.053
Ω
V
V
GS = 10 V, ID = 6.5 A, TJ=125 C
GS = 4.5 V, ID = 5.5 A
°
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
20
A
S
Forward Transconductance
VDS = 5 V, ID = 6.5 A
13
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
460
115
45
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DD = 15 V, ID = 1 A,
GS = 10 V, RGEN = 6
5
8
11
17
28
24
7
ns
ns
Ω
17
13
5
ns
ns
Qg
Qgs
Qgd
VDS = 5 V, ID = 6.5 A,
VGS = 5 V
nC
nC
nC
2
0.9
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
1.2
A
V
(Note 2)
VSD
Notes:
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
0.8
1:
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
c) 125° C/W on a 0.006 in2 pad
of 2 oz. copper.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS6630A Rev. C1
Typical Characteristics
40
2.2
2
VGS =10V
6.0V
35
VGS= 3.5V
5.0V
30
25
20
15
10
5
4.5V
1.8
1.6
1.4
1.2
1
4.0V
4.0V
4.5V
5.0V
3.5V
6.0V
7.0V
10V
3.0V
2.5V
0.8
0
10
20
, DRAIN CURRENT (A)
30
40
0
0
1
2
3
4
5
I
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.12
ID= 3.3 A
ID = 6.5 A
VGS = 10 V
0.1
0.08
0.06
0.04
0.02
0
TA = 125°C
TA = 25°C
0.8
0.6
-50
2
4
6
8
10
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
30
25
20
15
10
5
40
10
VDS = 5V
VGS= 0V
TA = -55°C
25°C
125°C
1
T = 125°C
A
25°C
0.1
-55°C
0.01
0.001
0
0.0001
0
0.2
V
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
6
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6630A Rev. C1
Typical Characteristics (continued)
1000
500
10
ID = 6.5A
VDS= 5V
C
iss
8
6
4
2
0
10V
15V
200
100
50
C
oss
C
rss
f = 1 MHz
VGS = 0 V
0
2
4
6
8
10
0.1
0.2
0.5
1
2
5
10
30
Q
, GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
10
SINGLE PULSE
RθJA = 125oC/W
T
A = 25oC
1
VGS= 10V
SINGLE PULSE
RθJA=125°C/W
TA= 25°C
0.1
0.01
0.1
0.3
1
3
10
30 50
0.001
0.01
0.1
1
10
100
1000
V
, DRAIN-SOURCE VOLTAGE (V)
DS
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
J A
θ
J A
θ
0.2
0.2
R
= 125°C/W
J A
θ
0. 1
0.1
0.05
0. 0 5
P(pk)
0.02
t1
0. 0 2
0. 0 1
t2
0. 0 1
S i
n
g le P ul se
T
- T = P
*
R
( t)
JA
J
A
θ
0.005
Du t
y Cy c l e, D= t 1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (se c)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6630A Rev. C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E2CMOSTM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
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failure to perform when properly used in accordance
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user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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