FDS6576 [ONSEMI]
P沟道2.5V额定PowerTrench® MOSFET;
| 型号： | FDS6576 |
| 厂家： | 
ONSEMI |
| 描述： | P沟道2.5V额定PowerTrench® MOSFET PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2006
tm
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
–11 A, –20 V. RDS(ON) = 0.014 :ꢀ@ VGS = –4.5 V
DS(ON) = 0.020 :ꢀ@ VGS = –2.5 V
• Extended VGSS range (r12V) for battery applications.
This P-Channel 2.5V specified MOSFET is in a rugged
gate version®of Fairchild Semiconductor's advanced
PowerTrench® process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
R
• Low gate charge (43nC typical).
• Fast switching speed.
Applications
• Load switch
• Battery protection
• Power management
• High performance trench technology for extremely
low RDS(ON)
.
• High power and current handling capability.
• RoHS Compliant.
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Ratings
–20
Units
Drain-Source Voltage
V
V
A
VGSS
Gate-Source Voltage
r 12
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
–11
–50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
PD
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
qC
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RTJA
RTJA
RTJC
qC/W
qC/W
qC/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6576
FDS6576
13’’
12mm
2500 units
FDS6576 Rev E3
2006 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 PA
'BVDSS
ꢀꢀꢀ'TJ
IDSS
Breakdown Voltage Temperature
Coefficient
–13
ID = –250 PA, Referenced to 25qC
VDS = –16 V, VGS = 0 V
mV/qC
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–1
PA
nA
nA
IGSSF
IGSSR
VGS
=
12 V, VDS = 0 V
100
VGS = –12 V, VDS = 0 V
–100
On Characteristics
VGS(th)
(Note 2)
Gate Threshold Voltage
–0.6 –0.83 –1.5
3.5
V
VDS = VGS, ID = –250 PA
'VGS(th)
ꢀꢀꢀ'TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = –250 PA, Referenced to 25qC
mV/qC
m:
Static Drain–Source
On–Resistance
VGS = –4.5 V,
GS = –2.5 V,
ID = –11 A
ID = –8.8 A
8.2
14
20
23
V
11.5
11.1
VGS = –4.5 V, ID = –11 A, TJ =125qC
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–25
A
S
Forward Transconductance
VDS = –4.5 V,
ID = –11 A
50
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
4044
955
pF
pF
pF
V
DS = –10 V,
V GS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
504
Switching Characteristics (Note 2)
VDD = –10 V, ID = –1 A,
GS = –4.5 V,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
18
17
124
79
43
7
32
31
ns
ns
V
RGEN = 6 :
198
126
60
ns
ns
VDS = –10 V,
VGS = –4.5 V
ID = –11 A,
Qg
Qgs
Qgd
nC
nC
nC
12
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
A
V
VSD
V
GS = 0 V, IS = –2.1 A (Note 2)
–0.66 –1.2
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
FDS6576 Rev E3
Typical Characteristics
2.25
2
50
VGS = 10V
4.5V
6.0V
40
3.5V
3.0V
1.75
1.5
1.25
1
VGS = 3.0V
30
20
10
0
3.5V
4.5V
6.0V
10V
2.5V
0.75
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.03
ID = 6 A
ID = 12A
GS = 10V
V
0.025
0.02
TA = 125oC
0.015
0.01
0.8
0.6
TA = 25oC
0.005
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
40
30
20
10
0
TA = -55oC
VGS = 0V
25oC
125oC
VDS = 5V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6576 Rev E3
Typical Characteristics
10
3000
2500
2000
1500
1000
500
VDS = 10V
f = 1MHz
GS = 0 V
ID = 12A
15V
V
8
6
4
2
0
CISS
20V
COSS
CRSS
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
100⼡
SINGLE PULSE
RDS(ON) LIMIT
RTJA = 125Ⱌ/W
1ms
10ms
100ms
1s
10s
DC
T
A = 25Ⱌ
10
1
VGS = 10V
SINGLE PULSE
RTJA = 125oC/W
0.1
0.01
T
A = 25oC
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) + RTJA
RTJA = 125 Ⱌ/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
ꢀ
FDS6576 Rev E3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
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FACT Quiet Series™
GlobalOptoisolator™
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SILENT SWITCHER®
SMART START™
SPM™
UniFET™
VCX™
Wire™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
HiSeC™
Stealth™
I2C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
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TinyPower™
TinyLogic®
TINYOPTO™
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UHC®
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ImpliedDisconnect™
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LittleFET™
MICROCOUPLER™
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MicroPak™
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MSX™
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PowerSaver™
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Across the board. Around the world.™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.ꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6576 Rev E3
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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