FDS4435BZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，-8.8A，20mΩ;
| 型号： | FDS4435BZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，-8.8A，20mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDS4435BZ
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -8.8 A, 20 mW
Description
www.onsemi.com
This P−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
D
D
D
D
G
S
S
S
Pin 1
SOIC8
CASE 751EB
Features
• Max R
• Max R
• Extended V
= 20 mW at V = −10 V, I = −8.8 A
GS D
DS(on)
= 35 mW at V = −4.5 V, I = −6.7 A
DS(on)
GS
D
ELECTRICAL CONNECTION
Range (−25 V) for Battery Applications
GSS
• HBM ESD Protection Level of 3.8 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
DS(on)
• This Device is Pb−Free and RoHS Compliant
Specifications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
−30
Unit
V
V
DS
MARKING DIAGRAM
V
GS
25
V
I
D
A
FDS4435BZ
ALYW
− Continuous T = 25°C (Note 1a)
−8.8
−50
A
− Pulsed
P
W
Power Dissipation T = 25°C (Note 1a)
2.5
1.0
24
D
A
Power Dissipation T = 25°C (Note 1b)
A
E
AS
Single Pulse Avalanche Energy
(Note 4)
mJ
FDS4435BZ = Specific Device Code
A
= Assembly Site
L
YW
= Wafer Lot Number
= Assembly Start Week
T , T
Operating and Storage Junction Tem-
perature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
FDS4435BZ
Package
Shipping
†
SOIC8
2,500 /
THERMAL CHARACTERISTICS
(Pb−Free)
Tape & Reel
Symbol
Parameter
Ratings
25
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
°C/W
R
Thermal Resistance, Junction to Case
q
JC
R
Thermal Resistance, Junction to
Ambient (Note 1a)
50
q
JA
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2019 − Rev. 4
FDS4435BZ/D
FDS4435BZ
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
D
= −250 mA, V = 0 V
BV
Drain to Source Breakdown Voltage
−30
V
GS
DSS
I
= −250 mA, referenced to 25°C
−21
mV/°C
Breakdown Voltage Temperature
Coefficient
DBV
/
D
DSS
DT
J
DSS
GSS
mA
mA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −24 V, V = 0 V
1
DS
GS
I
=
25 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
I
= V , I = −250 mA
DS D
V
Gate to Source Threshold Voltage
−1
−2.1
−3
V
GS
GS(th)
= −250 mA, referenced to 25°C
6
mV/°C
Gate to Source Threshold Voltage
Temperature Coefficient
DV
/
D
GS(th)
DT
J
Static Drain to Source On Resistance
mW
R
V
V
V
V
= −10 V, I = −8.8 A
16
26
22
24
20
35
28
DS(on)
GS
D
= −4.5 V, I = −6.7 A
GS
GS
DS
D
= −10 V, I = −8.8 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −5 V, I = −8.8 A
S
D
DYNAMIC CHARACTERISTICS
V
= −15 V, V = 0 V, f = 1MHz
GS
C
Input Capacitance
1385
275
230
4.5
1845
365
pF
pF
pF
W
DS
iss
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
345
rss
R
f = 1MHz
g
SWITCHING CHARACTERISTICS
V
= −15 V, I = −8.8 A, V = −10
D GS
GEN
t
Turn−On Delay Time
Rise Time
10
6
20
12
48
22
40
ns
ns
ns
ns
nC
DD
V, R
d(on)
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
30
12
28
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to −10 V, V = −15 V,
= −8.8 A
g
GS DD
I
D
Q
Total Gate Charge
V
D
= 0 V to −5 V, V = −15 V,
16
23
nC
g
GS
DD
DD
I
= −8.8 A
V
= −15 V, I = −8.8 A
D
Q
Gate to Source Charge
5.2
7.4
nC
nC
gs
Q
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage V = 0V, I = −8.8A (Note 2)
V
SD
−0.9
29
−1.2
44
V
GS
S
I = −8.8 A, di/dt = 100 A/ms
F
t
rr
Reverse Recovery Time
ns
nC
Q
Reverse Recovery Charge
23
35
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 50°C/W when mounted on
a 1 in pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T = 25°C, L = 1 mH, I = −7 A, V = −30 V, V = −10 V.
J
AS
DD
GS
www.onsemi.com
2
FDS4435BZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
50
40
30
20
10
0
4.0
3.5
VGS = −10V
VGS = −5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
VGS = −3.5V
VGS = −4.5V
3.0
2.5
2.0
1.5
1.0
0.5
VGS = −4.5V
VGS = −5V
VGS = −4V
VGS = −4V
VGS = −3.5V
VGS = −10V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
0
1
2
3
4
0
10
20
30
40
50
−ID , DRAIN CURRENT(A)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
60
ID = −8.8A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
ID = −8.8A
VGS = −10V
50
40
30
20
10
TJ = 125oC
TJ = 25oC
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
−VGS , GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (5C)
TJ
Figure 3. Normalized On−Resistance vs Junction
Figure 4. On−Resistance vs Gate to Source
Temperature
Voltage
50
100
PULSE DURATION = 80
ms
DUTY CYCLE = 0.5%MAX
VGS = 0V
10
40
30
20
10
0
1
VDS = −5V
TJ = 25oC
TJ = 150oC
0.1
0.01
TJ = 150oC
TJ = −55oC
0.001
0.0001
TJ = 25oC
TJ =−55oC
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−VSD, BODY DIODE FORWARD VOLTAGE (V)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
www.onsemi.com
3
FDS4435BZ
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
10
8
4000
1000
ID = −8.8A
Ciss
VDD = −10V
6
VDD = −15V
Coss
VDD = −20V
4
Crss
2
f = 1 MHz
GS = 0V
V
0
100
0
5
10
15
20
25
30
0.1
1
10
30
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10−4
20
10
VDS = 0V
10−5
TJ = 125oC
10−6
TJ = 25oC
TJ = 125oC
10−7
TJ = 25oC
10−8
10−9
1
0.01
0.1
1
10
30
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE(ms)
−VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
10
100
8
6
4
2
0
100us
1ms
10
1
VGS = −10V
10ms
VGS = −4.5V
100ms
THIS AREA IS
LIMITED BY RDS(on)
SINGLE PULSE
J = MAX RATED
1s
0.1
T
10s
DC
R
qJA = 125oC/W
A =25oC
R
qJA = 50oC/W
T
0.01
25
50
75
100
125
150
0.1
1
10
80
TA, AMBIENT TEMPERATURE (5C)
−VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
4
FDS4435BZ
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
1000
100
10
SINGLE PULSE
RqJA = 125 oC/W
VGS = −10 V
TA = 25o
C
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
SINGLE PULSE
qJA = 125oC/W
NOTES:
DUTY FACTOR: D = t / t
R
1
2
PEAK T = P
J
x Z
x RqJA+ T
A
qJA
DM
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 14. Junction To Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in
the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDS4435BZ_F085
Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
FAIRCHILD
FDS4435D84Z
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS4435F011
Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS4435L86Z
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明