FDPF12N50NZ_技术文档

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August 2016

FDP12N50NZ / FDPF12N50NZ

TM

N-Channel UniFET II MOSFET

500 V, 11.5 A, 520 m

Features

Description

•

R_DS(on)= 460 m (Typ.) @ V_GS= 10 V, I_D= 5.75 A

Low Gate Charge (Typ. 23 nC )

Low C_rss(Typ. 14 pF )

UniFET^TMII MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power con-

verter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

100% Avalanche Tested

ESD Improved Capability

RoHS Compliant

Applications

•

LCD/LED/PDP TV

Lighting

Uninterruptible Power Supply

D

G

D

S

G

D

TO-220F

TO-220

S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted.

Symbol

V_DSS

V_GSS

Parameter

FDP12N50NZ FDPF12N50NZ

Unit

V

Drain to Source Voltage

Gate to Source Voltage

500

±25

V

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

11.5

6.9

46

11.5*

6.9*

46*

I_D

Drain Current

A

I_DM

E_AS

I_AR

(Note 1)

(Note 2)

(Note 1)

A

mJ

Single Pulsed Avalanche Energy

Avalanche Current

560

11.5

17

A

E_AR

Repetitive Avalanche Energy

MOSFET dv/dt Ruggedness

Peak Diode Recovery dv/dt

mJ

20

V/ns

W

W/^oC

^oC

dv/dt

P_D

(Note 3)

10

(T_C= 25^oC)

- Derate above 25^oC

170

42

Power Dissipation

1.37

0.33

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

R_JC

R_JA

Parameter

Unit

FDP12N50NZ FDPF12N50NZ

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.73

62.5

3.0

^oC/W

62.5

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

1

Package Marking and Ordering Information

Device Marking

FDP12N50NZ

FDPF12N50NZ

Device

Package

TO-220

Reel Size

Tube

Tape Width

N/A

Quantity

50 units

FDP12N50NZ

FDPF12N50NZ

TO-220F

Tube

N/A

Electrical Characteristics ^T_C= 25^oC unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

I_D= 250A, V_GS= 0V, T_J= 25^oC

-

V

500

-

BV_DSS

Drain to Source Breakdown Voltage

BV_DSS

/ T_J

Breakdown Voltage Temperature

Coefficient

I

_D= 250A, Referenced to 25^oC

0.5

V/^oC

V

_DS= 500V, V_GS= 0V

-

1

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

A

V_DS= 400V, T_C= 125^oC

10

V_GS= ±25V, V_DS= 0V

±10

On Characteristics

V_GS(th)

R_DS(on)

g_FS

Gate Threshold Voltage

V_GS= V_DS, I_D= 250A

V_GS= 10V, I_D= 5.75A

V_DS= 20V, I_D= 5.75A

3.0

-

5.0

0.52

-

V



S

Static Drain to Source On Resistance

Forward Transconductance

-

0.46

12

Dynamic Characteristics

C_iss

C_oss

C_rss

Q_g

Input Capacitance

-

945

155

14

1235

205

20

30

-

pF

nC

V_DS= 25V, V_GS= 0V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

23

V

_DS= 400V, I_D= 11.5A

_GS= 10V

Q_gs

Q_gd

5.5

9.6

(Note 4)

-

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

-

20

50

60

45

50

ns

V

R

_DD= 250V, I_D= 11.5A

_G= 25

110

130

100

(Note 4)

Drain-Source Diode Characteristics

I_S

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

-

11.5

46

1.4

-

A

I_SM

V_SD

t_rr

Drain to Source Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_SD= 11.5A

-

V

315

2.0

ns

C

V

_GS= 0V, I_SD= 11.5A

dI_F/dt = 100A/s

Q_rr

Reverse Recovery Charge

-

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 8.5mH, I = 11.5A, V = 50V, R = 25, Starting T = 25C

AS

DD

G

J

3. I 11.5A, di/dt  200A/s, V  BV

, Starting T = 25C

SD

DD

DSS

J

4. Essentially Independent of Operating Temperature Typical Characteristics

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

2

Typical Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

30

50

V_GS= 15.0 V

10.0 V

8.0 V

7.0 V

10

6.5V

6.0 V

5.5 V

150^oC

25^oC

1

-55^oC

*Notes:

1. 250s Pulse Test

2. T_C= 25^oC

*Notes:

1. V_DS= 20V

2. 250s Pulse Test

0.1

1

10

20

3

4

5

6

7

8

9

10

V_DS, Drain-Source Voltage[V]

V_GS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Drain Current and Gate Voltage

1.0

0.9

0.8

0.7

0.6

0.5

0.4

100

150^oC

10

25^oC

V_GS= 10V

*Notes:

1. V_GS= 0V

V_GS= 20V

*Note: T_C= 25^oC

2. 250s Pulse Test

1

0.4

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

I_D, Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

2500

C

= C + C (C = shorted)

gs gd ds

iss

= C + C

ds gd

= C

gd

oss

rss

V_DS= 100V

8

2000

1500

1000

500

0

V_DS= 250V

*Note:

1. V_GS= 0V

V_DS= 400V

2. f = 1MHz

6

4

2

0

C_iss

C_oss

C_rss

*Note: I_D= 11.5A

15 20

0.1

1

10

30

0

5

10

Q_g, Total Gate Charge [nC]

25

V_DS, Drain-Source Voltage [V]

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

3

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

2.8

2.4

2.0

1.6

1.2

1.20

1.15

1.10

1.05

1.00

0.95

*Notes:

1. V_GS= 0V

*Notes:

1. V_GS= 10V

2. I_D= 5.75A

0.8

0.90

0.85

2. I_D= 250uA

0.4

-75 -50

0

50

100

150

-100

-50

0

50

100

150

o

T_J, Junction Temperature [C]

Figure 9. Maximum Safe Operating Area

- FDPF12N50NZ

Figure 10.Maximum Safe Operating Area

- FDP12N50NZ

100

30s

100s

10s

100s

10

1ms

10ms

100 ms

DC

1

Operation in This Area

is Limited by R _DS(on)

is Limited by R_DS(on)

*Notes:

1. T_C= 25^oC

0.1

* Notes :

0.1

1. T_C= 25^oC

2. T_J= 150^oC

3. Single Pulse

0.01

1

10

100

1000

1

10

100

1000

V_DS, Drain-Source Voltage [V]

Figure 11. Maximum Drain Current vs. Case Temperature

12

10

8

6

4

2

0

25

50

75

100

125

150

o

T_C,Case Temperature [C]

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

4

Typical Characteristics (Continued)

Figure 12. Transient Thermal Response Curve - FDP12N50NZ

5

1

0.5

0.2

0.1 0.1

P_DM

0.05

0.02

0.01

t₁

t₂

* Notes :

1. Z_JC(t) = 0.73^oC/W Max.

Single pulse

0.01

2. Duty Factor, D=t₁/t₂

3. T_JM- T_C= P_DM* Z_JC(t)

0.001

10^-5

10^-4

10^-3

10^-2

10^-1

1

10

Rectangular Pulse Duration [sec]

t₁, Square Wave Pulse Duration [sec]

Figure 13. Transient Thermal Response Curve - FDPF12N50NZ

5

D=0.5

1

0.2

P_DM

0.1

t₁

0.05

10^-1

10^-2

t₂

0.02

0.01

*Notes:

1. Z_JC(t) = 3.0^oC/W Max.

2. Duty Factor, D = t₁/t₂

3. T_JM- T_C= P_DM* Z_JC(t)

single pulse

10^-5

10^-4

10^-3

10^-2

10^-1

1

10

t , Square Wave Pulse Duration [sec]

¹t₁, Square Wave Pulse Duration [sec]

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

5

Figure 14. Gate Charge Test Circuit & Waveform

I

= const.

G

Figure 15. Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

V

10V

GS

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

V_GS

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

6

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

V_DS

_

I _SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

7

Mechanical Dimensions

TO-220 3L

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

8

Mechanical Dimensions

TO-220F 3L

www.fairchildsemi.com

FDP12N50NZ / FDPF12N50NZ Rev. 1.5

9

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

®

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F-PFS™

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OPTOPLANAR

®*

®

AttitudeEngine™

®

tm

®

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Global Power Resource^SM

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Green FPS™

®

TinyBoost

TinyBuck

®

AX-CAP *

Power Supply WebDesigner™

®

BitSiC™

PowerTrench

TinyCalc™

Build it Now™

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CorePOWER™

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CTL™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

PowerXS™

®

TinyLogic

Programmable Active Droop™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

®

QFET

QS™

Quiet Series™

Current Transfer Logic™

Marking Small Speakers Sound Louder RapidConfigure™

TranSiC™

®

DEUXPEED

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

™

TriFault Detect™

TRUECURRENT *

Dual Cool™

®

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SerDes™

EfficentMax™

ESBC™

MicroPak™

SmartMax™

MicroPak2™

MillerDrive™

MotionMax™

SMART START™

®

Solutions for Your Success™

UHC

®

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VCX™

VisualMax™

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XS™

Fairchild

®

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STEALTH™

Fairchild Semiconductor

FACT Quiet Series™

®

MTi

SuperFET

®

MTx

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FACT

®

MVN

FastvCore™

FETBench™

FPS™

®

mWSaver

®

OptoHiT™

OPTOLOGIC

SupreMOS

Xsens™

®

SyncFET™

仙童

Sync-Lock™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require

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Datasheet Identification

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Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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Datasheet contains preliminary data; supplementary data will be published at a later

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make changes at any time without notice to improve the design.

No Identification Needed

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Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I77

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FDP12N50NZ / FDPF12N50NZ Rev. 1.5

10

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

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1


型号：	FDPF12N50NZ
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，UniFETTM II，500 V，11.5 A，520 mΩ，TO-220F 局域网开关脉冲晶体管
文件：	总12页 (文件大小：1025K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDPF12N50NZ [ONSEMI]

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