FDP8440 [ONSEMI]
N 沟道,逻辑电平,PowerTrench® MOSFET,40V,277A,2.2mΩ;![FDP8440](http://pdffile.icpdf.com/pdf2/p00362/img/icpdf/FDP8440_2215915_icpdf.jpg)
型号: | FDP8440 |
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描述: | N 沟道,逻辑电平,PowerTrench® MOSFET,40V,277A,2.2mΩ 局域网 开关 脉冲 晶体管 |
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April 2013
FDP8440
N-Channel PowerTrench MOSFET
®
40 V, 277 A, 2.2 mΩ
Features
Applications
•
•
•
•
•
•
RDS(on) = 1.64 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
Qg(tot) = 345 nC (Typ.)@ VGS = 10 V
Low Miller Charge
•
•
•
•
Power Tools
Motor Drives and Uninterruptible Power Supplies
Synchronous Rectification
Low Qrr Body Diode
Battery Protection Circuit
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
D
G
G
TO-220
D
S
S
o
T
= 25 C unless otherwise noted
MOSFET Maximum Ratings
C
Symbol
Parameter
FDP8440
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
40
V
V
±20
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
277*
196*
100
ID
A
IDM
Drain Current
- Pulsed
(Note 1)
(Note 2)
500
1682
A
mJ
EAS
Single Pulsed Avalanche Energy
(TC = 25oC)
- Derate above 25oC
306
W
PD
Power Dissipation
2.04
W/oC
oC
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient, Max.
0.49
0.5
oC/W
oC/W
oC/W
62.5
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP8440
FDP8440
TO-220
N/A
N/A
50units
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0V, ID = 250μA
DS = 32V
40
--
--
--
--
1
V
V
μA
IDSS
TC = 150oC
--
--
--
--
250
μA
VGS = 0 V
IGSS
VGS = ±20V
±100
nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
1
--
--
--
3
V
V
V
GS = 4.5V, ID = 80A
GS = 10V, ID = 80A
1.88
1.64
2.4
2.2
RDS(on)
Static Drain-Source On-Resistance
mΩ
VGS = 10V, ID = 80A,
TC = 175oC
--
3.00
4.4
Dynamic Characteristics
Ciss
Input Capacitance
--
--
--
--
--
--
--
--
--
18600
1840
1400
1.1
24740
2450
2100
--
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
RG
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
Qg(tot)
Qg(2)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
345
32.5
49
450
--
nC
nC
nC
nC
nC
VDD = 20V
D = 80A
Ig = 1.0mA
I
--
Qgs2
Qgd
16.5
74
--
--
Switching Characteristics (V = 10V)
GS
tON
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
--
--
--
--
--
--
175
43
360
95
ns
ns
ns
ns
ns
ns
VDD = 20V,ID = 80A
VGS = 10V, RGEN = 7Ω
130
435
290
730
275
875
590
1470
td(off)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings
ISD = 80A
--
--
--
--
--
--
1.25
1.0
--
V
V
VSD
Source to Drain Diode Voltage
ISD = 40A
trr
Reverse Recovery Time
ISD = 75A, dISD/dt = 100A/μs
ISD = 75A, dISD/dt = 100A/μs
59
77
ns
nC
QRR
Reverse Recovery Charge
--
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting T = 25°C, L = 1mH, I = 58A, V = 36V, V = 10V.
J
AS
DD
GS
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
400
100
100
VGS = 10.0 V
7.0 V
150oC
-55oC
5.0 V
10
3.5 V
3.0 V
2.5 V
10
25oC
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 20V
1
2. TC = 25oC
2. 250μs Pulse Test
0.4
0.04
1
0.1
1
0
2
4
6
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.80
1000
1.75
1.70
1.65
1.6
VGS = 4.5V
100
150oC
25oC
10
VGS = 10V
Notes:
1. VGS = 0V
*Note: TC = 25oC
150 200 250
2. 250μs Pulse Test
1
0
50
100
0.3
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
30000
24000
18000
12000
6000
0
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 25V
VDS = 20V
VDS = 15V
= C + C
ds gd
= C
gd
oss
rss
8
6
4
2
0
Ciss
* Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
* Note : ID = 80A
300
10-1
100
VDS, Drain-Source Voltage [V]
101
20
0
100
200
400
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
3
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.9
0.5
* Notes :
1. VGS = 0V
* Notes :
1. VGS = 10V
2. ID = 250μA
2. ID = 80A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 10. Safe Operating Area
Figure 9. Unclamped Inductive Switching
Capability
3000
1000
200
100
100μs
TJ = 25oC
100
10
1
TJ = 150oC
10
1ms
Operation in This Area
is Limited by R DS(on)
10ms
*Notes:
1. TC = 25oC
100ms
2. TJ = 175oC
3. Single Pulse
0.1
1
0.01
1
10
VDS, Drain-Source Voltage [V]
0.1
1
10
100
1000 10000
tAV, TIME IN AVALANCHE(ms)
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
* Notes :
1. ZθJC(t) = 0.49oC/W Max.
2. Duty Factor, D=t1/t2
Single pulse
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
4
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
5
www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
6
www.fairchildsemi.com
Mechanical Dimensions
TO-220B03
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
7
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
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Sync-Lock™
®*
®
tm
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PowerXS™
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Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. C2
8
www.fairchildsemi.com
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