FDP6030BL [ONSEMI]
N 沟道逻辑电平 PowerTrench® MOSFET 30V，40A，18mΩ;
| 型号： | FDP6030BL |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平 PowerTrench® MOSFET 30V，40A，18mΩ 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
Features
• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V
RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
General Description
• Critical DC electrical parameters specified at elevated
temperature.
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
• High performance trench technology for
extremely low RDS(ON)
.
• 175°C maximum junction temperature rating.
D
D
G
G
G
TO-220
D
FDP Series
S
S
TO-263AB
FDB Series
S
TC = 25°C unless otherwise noted
Absolute Maximum Ratings
FDP6030BL FDB6030BL
Symbol
Parameter
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
30
V
V
A
±
20
(Note 1)
Maximum Drain Current - Continuous
- Pulsed
40
120
°
PD
60
W
Total Power Dissipation @ TC = 25 C
°
°
0.36
Derate above 25 C
W/ C
°
TJ, TSTG
Operating and Storage Junction Temperature Range
-65 to +175
C
Thermal Characteristics
°
θ
Thermal Resistance, Junction-to-Case
2.5
R
C/W
JC
°
θ
Thermal Resistance, Junction-to-Ambient
62.5
R
C/W
JA
Package Marking and Ordering Information
Device Marking
FDB6030BL
Device
Reel Size
13’’
Tape Width
24mm
Quantity
800
FDB6030BL
FDP6030BL
FDP6030BL
Tube
N/A
45
2000 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
Publication Order Number:
FDB6030BL/D
TC = 25°C unless otherwise noted
Test Conditions
(Note 1)
Electrical Characteristics
Symbol
Parameter
Min Typ
Max Units
DRAIN-SOURCE AVALANCHE RATINGS
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 40 A
150
40
mJ
A
IAR
Maximum Drain-Source Avalnche Current
Off Characteristics
µ
A
BVDSS
Drain-Source Breakdown Voltage
30
V
VGS = 0 V, ID = 250
∆
µ
°
°
Breakdown Voltage Temperature
Coefficient
23
DSS
BV
∆
ID = 250 A, Referenced to 25 C
mV/ C
TJ
µ
A
IDSS
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
1
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
3
nA
(Note 1)
On Characteristics
VGS(th)
µ
A
Gate Threshold Voltage
1
1.6
V
VDS = VGS, ID = 250
∆
µ
°
°
Gate Threshold Voltage
Temperature Coefficient
-4.5
GS(th)
V
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
Ω
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 20 A,
0.015
0.021
0.019
0.018
0.030
0.024
°
VGS = 10 V, ID = 20 A, TJ = 125 C
VGS = 4.5 V,ID = 17 A
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 10 V
40
A
S
Forward Transconductance
VDS = 5 V, ID = 20 A
30
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = 15 V, VGS = 0 V,
1160
250
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
100
(Note 1)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V, ID = 1 A,
9
17
20
37
16
17
ns
ns
Ω
VGS = 10 V, RGEN = 6
11
23
8
ns
ns
Qg
Qgs
Qgd
VDS = 15 V,
12
3.2
3.7
nC
nC
nC
ID = 20 A, VGS = 5 V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 1)
IS
Maximum Continuous Drain-Source Diode Forward Current
40
A
V
(Note 1)
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 20 A
0.95
1.2
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
2.6
2.4
2.2
2
80
VGS = 10V
6.0V
70
5.0V
60
50
40
30
20
10
0
4.5V
VGS = 3.0V
4.0V
1.8
1.6
1.4
1.2
1
3.5V
3.5V
4.0V
4.5V
5.0V
3.0V
4
7.0V
10V
0.8
0
10
20
30
40
50
0
1
2
3
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
1.8
ID = 10 A
ID = 20A
1.6
1.4
1.2
1
VGS = 10V
TA = 125oC
TA = 25oC
0.8
0.6
VGS = 0V
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
50
40
30
20
10
0
TA = -55oC
VGS = 0V
VDS = 5V
25oC
TA = 125oC
125oC
1
25oC
-55oC
0.1
0.01
0.001
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
V
SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
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3
Typical Characteristics (continued)
1600
1400
1200
1000
800
600
400
200
0
10
f = 1 MHz
GS = 0 V
ID = 20A
VDS = 5V
10V
V
8
6
4
2
0
15V
CISS
COSS
CRSS
0
5
10
15
20
25
30
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
2500
1000
100
10
VGS = 10V
SINGLE PULSE
RθJC = 2.5oC/W
TC = 25oC
SINGLE PULSE
2000
1500
1000
500
0
Rθ
=2.5°C/W
TC = 25°C
JC
10 s
µ
s
100
µ
1ms
RDS(ON) LIMIT
10ms
100ms
DC
1
0.01
0.1
1
10
100
1,000
0.1
1
10
100
SINGLE PULSE TIME (mSEC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
θ
JC
θ
R
= 2.5 °C/W
JC
θ
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t
1
t
2
0.03
0.02
T - T = P * R JC (t)
θ
Single Pulse
J
C
Duty Cycle, D = t /t
1
2
0.01
0.01
0.1
1
10
100
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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