FDN357N [ONSEMI]

N 沟道，逻辑电平增强型场效应晶体管，30V，1.9A，90mΩ;


型号：	FDN357N
厂家：	ONSEMI
描述：	N 沟道，逻辑电平增强型场效应晶体管，30V，1.9A，90mΩ PC 开关光电二极管晶体管场效应晶体管
文件：	总7页 (文件大小：263K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET – N-Channel, Logic

Level, Enhancement Mode

MAX

I MAX

DSS

DS(ON)

30 V

0.09 W @ 4.5 V

0.06 W @ 10 V

1.9 A

FDN357N

General Description

SUPERSOTt−3 N−Channel logic level enhancement mode power

field effect transistors are produced using onsemi’s proprietary, high

cell density, DMOS technology. This very high density process is

especially tailored to minimize on−state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMCIA cards, and other battery

powered circuits where fast switching, and low in−line power loss are

needed in a very small outline surface mount package.

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

MARKING DIAGRAM

Features

• 1.9 A, 30 V

357MG

♦ R

= 0.09 W @ V = 4.5 V

DS(ON)

= 0.06 W @ V = 10 V

DS(ON)

• Industry Standard Outline SOT−23 Surface Mount Package Using

Proprietary SUPERSOT−3 Design for Superior Thermal and

Electrical Capabilities

357 = Specific Device Code

= Date Code

= Pb−Free Package

• High Density Cell Design for Extremely Low R

DS(ON)

(Note: Microdot may be in either location)

• Exceptional On−Resistance and Maximum DC Current Capability

• This Device is Pb−Free and is RoHS Compliant

PIN ASSIGNMENT

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Gate−Source Voltage − Continuous

Value

Unit

DSS

GSS

Drain/Output

Current

Continuous

Pulsed

1.9

Maximum Power

Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

−55 to 150

T , T

Operating and Storage Junction

Temperature Range

°C

STG

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See detailed ordering and shipping information on page 5 of

this data sheet.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1a)

250

°C/W

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

Publication Order Number:

January, 2023 − Rev. 4

FDN357N/D

FDN357N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 V, I = 250 mA

−

DSS

Breakdown Voltage Temperature Coefficient I = 250 mA, Referenced to 25_C

−

mV/_C

DBV_DSS

DT_J

Zero Gate Voltage Drain Current

= 24 V, V = 0 V

−

DSS

= 24 V, V = 0 V, T = 55°C

Gate − Body Leakage, Forward

Gate − Body Leakage, Reverse

= 20 V, V = 0 V

100

−100

GSSF

= −20 V, V = 0 V

GSSR

ON CHARACTERISTICS (Note 2)

GS(th)

Gate Threshold Voltage

= V I = 250 mA

GS, D

1.6

Gate Threshold Voltage Temperature

Coefficient

I = 250 mA, Referenced to 25_C

−

−3.6

−

mV/_C

DV_GS(th)

DT_J

Static Drain−Source On−Resistance

= 4.5 V, I = 1.9 A

−

0.081

0.11

0.053

−

0.09

0.14

0.06

−

DS(ON)

= 4.5 V, I = 1.9 A, T = 125_C

= 10 V, I = 2.2 A

On−State Drain Current

= 4.5 V, V = 5 V

D(ON)

Forward Transconductance

= 5 V, I = 1.9 A

−

DYNAMIC CHARACTERISTICS

Input Capacitance

= 10 V, V = 0 V, f = 1 MHz

−

235

145

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

Turn−On Rise Time

Turn−Off Delay Time

Turn−Off Fall Time

Total Gate Charge

Gate−Source Charge

Gate−Drain Charge

= 10 V, I = 1 A,

−

D(on)

= 10 V, R

= 6 W

GEN

D(off)

= 10 V, I = 1.9 A, V = 5 V

4.2

1.3

1.7

5.9

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain−Source Diode

−

0.42

1.2

Forward Current

Source−Drain Diode Forward Voltage

= 0 V, I = 0.42 A (Note 2)

0.71

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

Typical R

using the board layouts shown below on 4.5” x 5” FR−4 PCB in a still air environment:

a) 250°C/W when mounted on

b) 270°C/W when mounted on

a 0.02 in pad of 2 oz Cu

a 0.001 in pad of 2 oz Cu

2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

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FDN357N

TYPICAL ELECTRICAL CHARACTERISTICS

1.8

1.6

= 10V

5.0

4.5

6.0

= 3.5 V

4.0

1.4

1.2

4.0

3.5

4.5

5.0

6.0

0.8

0.6

0.4

7.0

3.0

0.5

1.5

2.5

I , Drain Current (A)

, Drain−Source Voltage (V)

Figure 1. On Region Characteristics

Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

1.6

1.4

1.2

0.25

0.2

0.15

0.1

0.05

= 0.95 A

= 1.9 A

= 4.5 V

T = 125°C

T = 25°C

0.8

0.6

−50 −25

100

125 150

, Gate to Source Voltage (V)

T , Junction Temperature (5C)

Figure 3. On−Resistance Variation

Figure 4. On−Resistance Variation

with Temperature

with Gate to Source Voltage

T = −55°C

= 10 V

= 0 V

125°C

25°C

T = 125°C

0.1

25°C

−55°C

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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FDN357N

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

600

= 1.9 A

= 5 V

15 V

10 V

300

200

iss

oss

100

rss

f = 1 MHz

= 0 V

0.1

0.2

0.5

, Drain to Source Voltage (V)

Q , Gate Charge (nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

Limit

Single Pulse

10 DS(ON)

1ms

10ms

= 250°C/W

T = 25°C

100ms

10s

0.5

Single Pulse

0.1

= 10 V

0.05

= 250°C/W

T = 25°C

0.01

0.1 0.2

0.5

0.0001 0.001

0.01

0.1

100 300

Single Pulse Time (s)

, Drain−Source Voltage (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.2

0.1

(t) = r(t) * R

= 250°C/W

0.05

P(pk)

0.02

0.01

t₁

Single Pulse

t₂

0.005

T − T = P * R (t)

Duty Cycle, D = t / t

0.002

0.001

0.0001

0.001

0.01

0.1

t , Time (s)

100

300

Figure 11. Transient Thermal Response Curve

NOTE: Thermal characterization performed using the conditions described in Note 1a.

Transient thermal response will change depending on the circuit board design.

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FDN357N

PACKAGE MARKING AND ORDERING INFORMATION

†

Device

Device Marking

Package

Shipping

FDN357N

357

SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9

(Pb−Free, Halide Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United

States and/or other countries.

SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

ISSUE A

DATE 09 DEC 2019

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer to

XXX = Specific Device Code

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

= Month Code

XXXMG

= Pb−Free Package

(Note: Microdot may be in either location)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34319E

SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

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TECHNICAL PUBLICATIONS:

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For additional information, please contact your local Sales Representative at

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

FDN357N [ONSEMI]

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