FDMS86380-F085 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，50A，13.4mΩ;
| 型号： | FDMS86380-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，50A，13.4mΩ 局域网 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
13.4 mW @ 10 V
50 A
80 V, 50 A, 13.4 mW
ELECTRICAL CONNECTION
FDMS86380-F085
Features
• Typ R
• Typ Q
= 11.3 mW at V = 10 V; I = 50 A
GS D
DS(on)
= 20 nC at V = 10 V; I = 50 A
g(tot)
GS
D
• UIS Capability
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
N−Channel MOSFET
Bottom
Top
Pin 1
S
S
S
Applications
S
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Electronic Steering
• Integrated Starter/Alternator
• Distributed Power Architectures and VRM
• Primary Switch for 12 V Systems
D
D
D
D
PQFN8
CASE 483BJ
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
ON
AYWWWL
FDMS
86380
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain Current
GS
T
T
= 25°C
= 25°C
I
D
50
A
C
(V = 10 V) (Note 1)
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Pulsed Drain Current
See
Figure 4
C
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
E
16
75
mJ
W
WW
= Work Week
AS
FDMS86380 = Specific Device Code
P
D
Derate above 25°C
0.5
W/°C
°C
ORDERING INFORMATION
Operating and Storage Temperature
T , T
−55 to
+175
J
STG
†
Device
FDMS86380−F085
Package
Shipping
Thermal Resistance (Junction−to−Case)
R
2
°C/W
°C/W
q
JC
JA
PQFN8
(Power 56)
(Pb−Free)
3000 /
Maximum Thermal Resistance
(Junction−to−Ambient) (Note 3)
R
50
q
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Starting Tj = 25°C, L = 20 mH, I = 40 A, V = 80 V during inductor charging
AS
DD
and V = 0 V during time in avalanche.
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal
q
JA
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
is guaranteed by design while R
q
JA
q
JC
is determined by the user’s board design. The maximum rating presented
2
here is based on mounting on a 1 in pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2021 − Rev. 3
FDMS86380−F085/D
FDMS86380−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
I
= 250 mA, V = 0 V
80
−
−
−
−
−
−
1
V
VDSS
D
GS
I
V
V
= 80 V,
= 0 V
T = 25°C
J
mA
mA
nA
DSS
DS
GS
T = 175°C (Note 4)
−
1
J
I
Gate−to−Source Leakage Current
V
=
20 V
−
100
GSS
GS
ON CHARACTERISTICS
V
Gate−to−Source Threshold Voltage
Drain−to−Source On−Resistance
V
= V , I = 250 mA
2.0
−
3.0
11.3
25.3
4.0
V
GS(th)
DS(on)
GS
GS
DS
D
R
I
D
= 50 A
= 10 V
T = 25°C
J
13.4
30.0
mW
V
T = 175°C (Note 4)
−
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
1440
300
14
−
−
pF
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
f = 1 MHz
2.0
20
−
W
g
Q
Total Gate Charge
V
= 0 to 10 V
= 0 to 2 V
V = 64 V,
DD
30
−
nC
g(tot)
GS
GS
I
D
= 50 A
Q
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
2.7
8.8
4.4
g(th)
Q
−
gs
Q
−
gd
SWITCHING CHARACTERISTICS
t
Turn−On Time
Turn−On Delay
Rise Time
V
DD
V
GS
= 40 V, I = 50 A,
−
−
−
−
−
−
−
13
8
31
−
ns
on
D
= 10 V, R
= 6 W
GEN
t
d(on)
t
r
−
t
Turn−Off Delay
Fall Time
15
5
−
d(off)
t
f
−
t
Turn−Off Time
−
30
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Voltage
I
I
= 50 A, V = 0 V
−
−
−
−
−
−
1.25
1.2
55
V
SD
SD
GS
= 25 A, V = 0 V
SD
GS
t
Reverse Recovery Time
I = 50 A, dI /dt = 100 A/ms, V = 64 V
F
37
23
ns
rr
SD
DD
Q
Reverse Recovery Charge
35
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production
J
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2
FDMS86380−F085
TYPICAL CHARACTERISTICS
1.2
1.0
60
50
40
30
20
10
0
V
GS
= 10 V
Current Limited
by Silicon
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
0.1
t
1
t
2
DUTY CYCLE, D = t /t
1
2
x R
Peak T = P
x Z
+ T
JC C
q
q
J
DM
JC
Single Pulse
0.01
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10 V
T
C
= 25°C
For temperatures above 25°C
derate peak current as follows:
1000
175 * T
C
Ǹ
I + I
ƪ ƫ
25
150
100
10
Single Pulse
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
FDMS86380−F085
TYPICAL CHARACTERISTICS (continued)
1000
100
If R = 0
=(L)(I )/(1.3*Rated BV
t
− V
)
AV
AS
DSS
DD
If R ≠ 0
=(L/R)In[(I *R)/(1.3*Rated BV
100
10
t
AV
− V )+1]
DSS DD
AS
100 ms
10
Starting T = 25°C
J
1
Operation in this area may
be limited by R
DS(on)
1 ms
10 ms
100 ms
T
= 25°C
0.1
Starting T = 150°C
C
J
T = Max Rated
J
Single Pulse
1
0.001
0.01
1
0.1
10
100
500
0.01
0.1
1
10
100
t , TIME IN AVALANCHE (ms)
AV
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
(Note: Refer to onsemi Applications Notes AN7514 and
AN7515)
Figure 6. Unclamped Inductive Switching Capability
Figure 5. Forward Bias Safe Operating Area
150
120
90
60
30
0
200
V
GS
= 0 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
100
10
1
V
DD
= 5 V
T = 175°C
J
T = 25°C
J
T = 175°C
J
T = −55°C
J
T = 25°C
J
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
4
5
6
7
8
9
10
11
3
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
150
120
90
60
30
0
150
120
90
60
30
0
V
250 ms Pulse Width
T = 175°C
J
GS
250 ms Pulse Width
T = 25°C
J
15 V Top
10 V
8 V
7 V
6 V
V
GS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
5.5 V
5 V Bottom
1
0
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
FDMS86380−F085
TYPICAL CHARACTERISTICS (continued)
120
100
2.5
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
I
= 50 A
2.0
1.5
1.0
0.5
D
80
60
40
20
0
T = 175°C
J
I
V
= 50 A
D
= 10 V
T = 25°C
GS
J
−80
10
−40
0
40
80
120
160
6
7
9
200
8
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 12. Normalized RDS(on) vs. Junction
Temperature
Figure 11. RDS(on) vs. Gate Voltage
1.3
1.1
0.9
0.7
0.5
0.3
1.10
1.05
1.00
0.95
0.90
V
= V
DS
= 250 mA
GS
I
D
= 5 mA
I
D
−80
0
40
80
120
160 200
−40
−80
−40
0
40
80
120
160
200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
10
8
10000
1000
100
10
I
D
= 50 A
V
= 40 V
DD
V
DD
= 48 V
C
iss
V
= 32 V
DD
6
C
oss
4
2
0
f = 1 MHz
C
rss
V
GS
= 0 V
1
0
16
Q , GATE CHARGE (nC)
20
4
8
12
24
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 16. Gate Charge vs. Gate to Source
Voltage
Figure 15. Capacitance vs. Drain to Source
Voltage
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5
FDMS86380−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483BJ
ISSUE C
DATE 13 DEC 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13688G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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