FDMC7672S [ONSEMI]
N 沟道，Power Trench® SyncFET™，30V，14.8A，6.0mΩ;
| 型号： | FDMC7672S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® SyncFET™，30V，14.8A，6.0mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH), SyncFETt
V
R
MAX
I MAX
D
DS
DS(ON)
30 V
6.0 mW @ 10 V
7.1 mW @ 4.5 V
14.8 A
30 V, 14.8 A, 6.0 mW
FDMC7672S
General Description
This FDMC7672S is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery packs.
D
5
4
G
D
D
6
7
3
2
1
S
S
8
S
D
N-CHANNEL MOSFET
Features
• Max R
• Max R
= 6.0 mW at V = 10 V, I = 14.8 A
GS D
DS(on)
Pin 1
= 7.1 mW at V = 4.5 V, I = 12.4 A
DS(on)
GS
D
G
S
S
• High Performance Technology for Extremely Low R
• Pb−Free, Halide Free and RoHS Compliant
DS(on)
S
D
D
D
D
Applications
Top
Bottom
• DC−DC Buck Converters
• Notebook Battery Power Management
• Load Switch in Notebook
WDFN8 3.3 y 3.3, 0.65P
CASE 511DQ
(Option A)
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
30
Unit
V
AXYKK
FDMC
7672S
ON
V
DS
V
GS
20
V
I
D
A
Continuous, T = 25°C
18
14.8
45
C
Continuous, T = 25°C (Note 1a)
A
Pulsed
A
XY
KK
= Assembly Location
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
E
Single Pulse Avalanche Energy
(Note 3)
60
mJ
W
AS
P
Power Dissipation:
D
FDMC7672S = Specific Device Code
T
A
= 25°C
= 25°C (Note 1a)
36
2.3
C
T
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDMC7672S
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2023 − Rev. 4
FDMC7672S/D
FDMC7672S
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.5
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
53
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
−
12
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
nA
DS
GS
I
= 20 V, V = 0 V
100
GS
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 1 mA
1.2
1.6
3.0
V
DS
D
DV
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25°C
−
−6
−
mV/°C
GS(th)
J
/DT
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 14.8 A
−
−
−
−
5.0
6.1
5.9
78
6.0
7.1
9.0
−
mW
DS(on)
D
= 4.5 V, I = 12.4 A
D
= 10 V, I = 14.8 A, T = 125°C
D
J
g
FS
= 5 V, I = 14.8 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1895
770
85
2520
1025
130
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
1.2
3.2
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 15 V, I = 14.8 A, V = 10 V,
GEN
−
−
−
−
−
11
4
21
10
42
10
42
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
26
3
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 15 V,
30
g
GS
DD
I
= 14.8 A
D
V
D
= 0 V to 4.5 V, V = 15 V,
−
14
20
nC
GS
DD
I
= 14.8 A
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
DD
= 15 V, I = 14.8 A
−
−
5.3
4.0
−
−
nC
nC
gs
D
Q
= 15 V, I = 14.8 A
D
gd
www.onsemi.com
2
FDMC7672S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 14.8 A (Note 2)
−
−
−
−
0.8
0.5
29
1.3
1.2
45
V
SD
GS
S
= 0 V, I = 1.9 A (Note 2)
GS
S
t
Reverse Recovery Time
I
F
= 14.8 A, di/dt = 300 A/ms
ns
rr
Q
Reverse Recovery Charge
28
44
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 60 mJ is based on starting T = 25°C, L = 1 mH, I = 11 A, V = 27 V, V = 10 V. 100% test at L = 3 mH, I = 4.8 A.
AS
J
AS
DD
GS
AS
www.onsemi.com
3
FDMC7672S
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
45
36
27
18
9
4.0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
= 10 V
= 6 V
GS
3.5
V
V
GS
= 4.5 V
GS
3.0
2.5
V
= 4 V
GS
V
GS
= 3.5 V
V
= 3.5 V
GS
2.0
1.5
1.0
0.5
V
= 3 V
GS
V
GS
= 4 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 10 V
GS
V
GS
= 6 V
27
V
GS
= 4.5 V
0
0
0.4
0.6
0.8
9
18
36
45
0
0.2
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
15
12
1.6
1.4
1.2
1.0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 14.8 A
I
V
= 14.8 A
D
= 10 V
GS
9
6
3
T = 125°C
J
0.8
0.6
T = 25°C
J
10
25 50
75 100 125 150
2
4
6
8
−75 −50 −25
0
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
45
100
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
36
27
18
9
V
DS
= 5 V
T = 125°C
J
1
0.1
T = 125°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
www.onsemi.com
4
FDMC7672S
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
5000
I
D
= 14.8 A
V
= 10 V
DD
C
iss
1000
100
10
V
DD
= 15 V
6
4
2
0
C
oss
V
= 20 V
DD
C
rss
f = 1 MHz
V
GS
= 0 V
0
4
8
12
16
20
24
28
32
0.1
10
, Drain to Source Voltage (V)
DS
30
1
Q , Gate Charge (nC)
V
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
100
10
40
10
100 ms
T = 25°C
J
1 ms
10 ms
100 ms
1
THIS AREA IS
LIMITED BY R
DS(on)
T = 100°C
J
1 s
10 s
DC
SINGLE PULSE
0.1
0.01
T = MAX RATED
J
R
= 125°C/W
T = 125°C
q
JA
J
T
A
= 25°C
1
0.01
1
0.01
10
, Drain to Source Voltage (V)
100
0.1
10
100
0.1
1
t
, Time in Avalanche (ms)
V
DS
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
2000
1000
100
10
V
= 10 V
GS
SINGLE PULSE
= 125°C/W
R
q
JA
T
A
= 25°C
1
0.5
−4
−3
−2
−1
100
10
10
10
10
10
1000
1
t, Pulse Width (s)
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
5
FDMC7672S
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
0.001
t
2
NOTES:
(t) = r(t) × R
SINGLE PULSE
Z
q
q
JA
JA
R
= 125°C/W
q
JA
Peak T = P
× Z (t) + T
q
JA A
J
DM
Duty Cycle, D = t /t
1
2
0.0001
−3
−2
−1
−4
10
10
10
1
100
1000
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
www.onsemi.com
6
FDMC7672S
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 13 shows
the reverse recovery characteristic of the FDMC7672S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
−2
20
10
T = 125°C
J
15
T = 100°C
J
−3
10
10
didt = 300 A/ms
10
−4
5
T = 25°C
J
−5
10
10
0
−6
−5
0
40
80
120
160
200
0
10
15
20
25
30
5
Time (ns)
V
DS
, Reverse Voltage (V)
Figure 14. SyncFET Body Diode Reverse
Figure 13. SyncFET Body Diode Reverse
Recovery Characteristics
Leakage vs. Drain−Source Voltage
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDMC7678
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明