FDMC7200S [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V，22mΩ，10mΩ;
| 型号： | FDMC7200S |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V，22mΩ，10mΩ 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual, N-Channel,
POWERTRENCH)
D1
D1
D1
G1
Pin 1
D1
D2/S1
V
IN
30 V, 22 mW and 10 mW
V
IN
S2
V
IN
S2
S2
G
HS
V
G2
IN
FDMC7200S
SWITCH
NODE
Bottom
General Description
GND
GND
GND
This device includes two specialized N−Channel MOSFETs in a
dual Power 33 (3 mm x 3 mm MLP) package. The switch node has
been internally connected to enable easy placement and routing of
synchronous buck converters. The control MOSFET (Q1) and
synchronous MOSFET (Q2) have been designed to provide optimal
power efficiency.
G
LS
Bottom
WDFN8 3x3, 0.65P
(Power 33)
CASE 511DE
MARKING DIAGRAM
Features
• Q1: N−Channel
♦ Max R
♦ Max R
= 22 mꢀ at V = 10 V, I = 6 A
GS D
DS(on)
ZXYKK
FDMC
7200S
= 34 mꢀ at V = 4.5 V, I = 5 A
DS(on)
GS
D
• Q2: N−Channel
♦ Max R
♦ Max R
= 10 mꢀ at V = 10 V, I = 8.5 A
GS D
DS(on)
= 13.5 mꢀ at V = 4.5 V, I = 7.2 A
DS(on)
GS
D
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Z
XY
KK
= Assembly Plant Code
= Date Code
= Lot Run Traceability Code
Applications
• Mobile Computing
• Mobile Internet Devices
• General Purpose Point of Load
FDMC7200S = Device Code
PIN ASSIGNMENT
Q2
5
4
3
2
1
6
7
8
Q1
ORDERING INFORMATION
†
Device
FDMC7200S
Package
Shipping
3000 /
Tape & Reel
WDFN8
(Pb−Free,
Halide Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
March, 2023 − Rev. 3
FDMC7200S/D
FDMC7200S
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Q1
30
20
18
23
Q2
30
20
13
46
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
DS
GS
V
(Note 4)
(Note 3)
V
I
D
Drain Current − Continuous (Package Limited)
− Continuous (Silicon Limited)
− Continuous
T
T
= 25°C
= 25°C
A
C
C
T = 25°C
7 (Note 1a) 13 (Note 1b)
A
− Pulsed
40
12
27
32
E
AS
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
mJ
W
P
D
T = 25°C
A
1.9 (Note 1a) 2.5 (Note 1b)
0.7 (Note 1c) 1.0 (Note 1d)
−55 to +150
T = 25°C
A
T , T
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Thermal Resistance, Junction to Ambient
Q1
Q2
Unit
65 (Note 1a) 50 (Note 1b)
180 (Note 1c) 125 (Note 1d)
°C/W
R
ꢁ
JA
R
ꢁ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
ꢁ
JC
7.5
4.2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
D
I
D
= 250 ꢂA, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
DSS
GS
= ꢃ mA, V = 0 V
GS
Breakdown Voltage Temperature
Coefficient
I
D
I
D
= 250 ꢂA, referenced to 25°C
= ꢃ mA, referenced to 25°C
Q1
Q2
−
−
14
13
−
−
mV/°C
ꢄ BVDSS
ꢄ TJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
ꢂ
A
DSS
DS
GS
GS
500
I
V
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
GSS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 ꢂA
Q1
Q2
1.0
1.0
2.3
2.0
3.0
3.0
V
DS D
= V , I = ꢃ mA
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 ꢂA, referenced to 25°C
= 1 mA, referenced to 25°C
Q1
Q2
−
−
−5
−6
−
−
mV/°C
ꢄ VGS(th)
ꢄ TJ
D
I
R
DS(on)
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 6 A
Q1
−
−
−
17
25
23
22
34
30
mꢀ
D
= 4.5 V, I = 5 A
D
= 10 V, I = 6 A, T = 125°C
D
J
V
GS
V
GS
V
GS
= 10 V, I = 8.5 A
Q2
−
−
−
7.8
10.3
11.4
10.0
13.5
13.1
D
= 4.5 V, I = 7.2 A
D
= 10 V, I = 8.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
V
DD
= 5 V, I = 6 A
Q1
Q2
−
−
29
43
−
−
S
D
= 5 V, I = 8.5 A
D
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2
FDMC7200S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
Q1
Q2
−
−
495
660
pF
pF
pF
ꢀ
iss
DS
GS
1080
1436
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
145
373
195
495
C
rss
Q1
Q2
−
−
20
35
30
52
R
f = 1 MHz
Q1
Q1
Q2
0.2
0.2
1.4
1.2
4.2
3.6
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1
Q2
−
−
11
7.6
20
15
ns
ns
ns
ns
nC
d(on)
V
DD
V
GS
= 15 V, I = 1 A,
D
GEN
= 10 V, R
= 6 ꢀ
t
Rise Time
Q1
Q2
−
−
3.1
1.8
10
10
r
Q2
V
DD
V
GS
= 15 V, I = 1 A,
D
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
35
21
56
34
= 10 V, R
= 6 ꢀ
d(off)
GEN
t
Q1
Q2
−
−
1.3
8.5
10
17
f
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
7.3
15.7
10
22
g(TOT)
Q1
V
DD
= 15 V, I = 6 A
D
Q2
V
DD
= 15 V, I = 8.5 A
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
3.1
7.2
4.3
10
nC
g(TOT)
Q1
V
DD
= 15 V, I = 6 A
D
Q2
DD
V
= 15 V, I = 8.5 A
D
Q
Q
Gate to Source Charge
Q1
DD
Q1
Q2
−
−
1.8
3
−
−
nC
nC
gs
V
= 15 V, I = 6 A
D
Q2
Gate to Drain “Miller” Charge
Q1
Q2
−
−
1
1.9
−
−
gd
V
DD
= 15 V, I = 8.5 A
D
DRAIN−SOURCE CHARACTERISTICS
V
SD
Source−Drain Diode Forward
Voltage
V
GS
V
GS
V
GS
= 0 V, I = 6 A (Note 2)
Q1
Q2
Q2
−
−
0.8
0.8
0.6
1.2
1.2
0.8
V
S
= 0 V, I = 8.5 A (Note 2)
S
= 0 V, I = 1.3 A (Note 2)
S
t
rr
Reverse Recovery Time
Q1
F
Q1
Q2
−
−
13
20
24
32
ns
I = 6 A, di/dt = 100 A/ꢂs
Q2
F
Q
rr
Reverse Recovery Charge
Q1
Q2
−
−
2.3
15
10
24
nC
I = 8.5 A, di/dt = 300 A/ꢂs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMC7200S
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
ꢁ
ꢁ
JC
JA
by design while R
is determined by the user’s board design.
ꢁ
CA
a. 65°C/W when mounted on
b. 50°C/W when mounted on
2
a 1 in pad of 2 oz copper
2
a 1 in pad of 2 oz copper
c. 180°C/W when mounted on
a minimum pad of 2 oz copper
d. 125°C./W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
3. Starting Q1: T = 25°C, L = 1 mH, I = 5 A, Vgs = 10 V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25C, L = 1 mH, I = 8 A, Vgs = 10 V,
Vdd = 27 V, 100% test at L = 3 mH, I = 3.2 A.
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
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4
FDMC7200S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
40
30
20
10
0
4
V
= 10 V
= 6 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
GS
V
GS
V
= 4.5 V
3
2
1
0
GS
V
GS
= 3.5 V
V
GS
= 4 V
V
= 4 V
GS
V
= 4.5 V
= 10 V
GS
V
GS
V
GS
= 6 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
= 3.5 V
1.0
GS
0.0
0.5
1.5
2.0
2.5
3.0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
100
1.6
1.4
1.2
I
V
= 6 A
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
80
60
40
20
0
I
D
= 6 A
T = 125°C
J
1.0
0.8
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
40
10
40
30
20
10
0
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
V
DS
= 5 V
1
0.1
T = 150°C
J
T = 25°C
J
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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5
FDMC7200S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
1000
I
D
= 6 A
C
C
iss
V
DD
= 15 V
oss
6
V
= 10 V
V
DD
= 20 V
DD
100
10
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
2
4
6
8
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
8
7
6
5
25
20
15
10
5
R
= 7.5°C/W
ꢁ
JC
V
= 10 V
GS
4
3
T = 25°C
J
Limited by Package
T = 100°C
J
2
V
= 4.5 V
100
GS
T = 125°C
J
1
0.01
0
25
0.1
1
7
50
75
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
c
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
50
10
1000
100
10
100 ꢂ s
1
1 ms
THIS AREA IS
LIMITED BY R
DS(on)
10 ms
100 ms
1 s
10 s
SINGLE PULSE
SINGLE PULSE
0.1
1
R
= 180°C/W
T = MAX RATED
ꢁ
JA
J
T = 25°C
A
R
= 180°C/W
ꢁ
JA
DC
T = 25°C
A
0.01
0.1
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Forward Bias Safe Operating Area
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6
FDMC7200S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
= 180°C/W
R
ꢁ
JA
0.003
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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7
FDMC7200S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
4
27
18
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
= 10 V
GS
V
GS
= 3 V
V
= 4.5 V
GS
3
2
1
0
V
GS
= 4 V
V
GS
= 3 V
V
= 3.5 V
GS
V
GS
= 3.5 V
V
GS
= 4 V
9
0
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
V
= 4.5 V
GS
0.0
0.5
1.0
1.5
0
9
18
27
10
1.2
V
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 14. On−Region Characteristics
Figure 15. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
100
80
60
40
20
0
PULSE DURATION = 80 ꢂ s
I
V
= 8.5 A
= 10 V
D
DUTY CYCLE = 0.5% MAX
I
= 8.5 A
D
GS
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50
75 100 125 150
2
4
6
8
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On Resistance vs.
Junction Temperature
Figure 17. On−Resistance vs. Gate to
Source Voltage
30
10
27
18
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
V
= 5 V
DS
T = 150°C
J
1
0.1
T = 150°C
J
T = 25°C
J
T = 25°C
J
9
0
T = −55°C
J
0.01
0.001
T = −55°C
J
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMC7200S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
3000
I
D
= 8.5 A
V
= 10 V
= 20 V
C
iss
DD
1000
V
= 15 V
DD
6
C
oss
V
DD
4
100
10
2
f = 1 MHz
= 0 V
C
rss
V
GS
0
0
2
4
6
8
10
12
14
16
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source
Voltage
20
10
50
40
30
20
10
0
V
GS
= 10 V
T = 25°C
J
V
GS
= 4.5 V
T = 100°C
J
Limited by Package
T = 125°C
J
R
= 4.2°C/W
ꢁ
JC
1
0.01
0.1
1
10
30
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
c
Figure 22. Unclamped Inductive Switching
Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
50
10
100
10
1
V
GS
= 10 V
100 ꢂ s
1 ms
1
0.1
10 ms
THIS AREA IS
LIMITED BY R
100 ms
1 s
10 s
DS(on)
SINGLE PULSE
T = MAX RATED
SINGLE PULSE
R = 125°C/W
ꢁ
JA
T = 25°C
A
J
DC
R
= 125°C/W
ꢁ
JA
T = 25°C
A
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDMC7200S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
= 125°C/W
(Note 1b)
1
2
R
ꢁ
JA
PEAK T = P
x Z
x R
+ T
JA A
ꢁ
ꢁ
J
DM
JA
0.001
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 26. Junction−to−Ambient Transient Thermal Response Curve
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FDMC7200S
TYPICAL CHARACTERISTICS (continued)
SyncFETE Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 27 shows
the reverse recovery characteristic of the FDMC7200S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
−2
10
7
6
5
T = 125°C
J
−3
10
10
4
di/dt = 300 A/ꢂ s
T = 100°C
J
3
−4
2
1
0
−5
10
10
−1
−2
T = 25°C
J
−6
0
20
40
60
80
100
0
10
15
20
25
30
5
TIME (ns)
V
DS
, REVERSE VOLTAGE (V)
Figure 28. SyncFET Body Diode Reverse
Figure 27. FDMC7200S SyncFET Body Diode
Reverse Recovery Characteristic
Leakage vs. Drain−Source Voltage
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DE
ISSUE O
DATE 31 AUG 2016
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WDFN8 3X3, 0.65P
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相关型号：
FDMC7208S_12
Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ
FAIRCHILD
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