FDMA3023PZ [ONSEMI]
双 P 沟道 PowerTrench® MOSFET -30V，-2.9A，90mΩ;
| 型号： | FDMA3023PZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道 PowerTrench® MOSFET -30V，-2.9A，90mΩ |
| 文件： | 总8页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual, P-Channel,
POWERTRENCH)
Pin 1
S1 G1 D2
D1
D2
30 V, -29 A, 90 mW
FDMA3023PZ
Description
This Device is Designed Specifically as a Single Package Solution
for the battery charge switch in cellular handset and other
Ultra−Portable Applications. It features two independent P−Channel
MOSFETs with low on−state resistance for minimum conduction
losses. When connected in the typical common source configuration,
bi−directional current flow is possible.
D1 G2 S2
MicroFET
WDFN6 2X2, 0.65P
CASE 511DA
S1
G1
D2
D1
1
6
The MicroFET 2X2 Package Offers Exceptional Thermal
Performance for its physical size and is well suited to linear mode
applications.
2
5
G2
S2
3
4
Features
• Max R
• Max R
• Max R
• Max R
= 90 mꢀ at V = −4.5 V, I = −2.9 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 130 mꢀ at V = −2.5 V, I = −2.6 A
GS
D
= 170 mꢀ at V = −1.8 V, I = −1.7 A
GS
D
MARKING DIAGRAM
= 240 mꢀ at V = −1.5 V, I = −1.0 A
GS
D
• Low Profile − 0.8 mm Maximum − in the New Package
MicroFET™ 2x2 mm
&Z&2&K
323
• HBM ESD Protection > 2 kV (Note 3)
• These Devices is Pb−Free, Halide Free and is RoHS Compliant
&Z
&2
&K
= Assembly Plant Code
= 2−Digit Date−Code
= 2−Digit Lot Code
• Free From Halogenated Compounds and Antimony Oxides
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
323 = Specific Device Code
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Value
−30
8
Unit
V
V
DS
V
GS
ORDERING INFORMATION
V
†
Device
Shipping
Package
I
D
A
Drain Current
FDMA3023PZ
WDFN−6
(Pb−Free)
3000 /
Tape & Reel
− Continuous (Note 1a)
−2.9
−6
− Pulsed
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
P
D
Power Dissipation T = 25°C
1.4
A
W
(Note 1a)
Power Dissipation T = 25°C
0.7
A
(Note 1b)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2023 − Rev 2
FDMA3023PZ/D
FDMA3023PZ
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
86
Unit
°C/W
°C/W
°C/W
°C/W
R
R
R
R
Thermal Resistance for Single Operation, Junction to Ambient (Note 1a)
Thermal Resistance for Single Operation, Junction to Ambient (Note 1b)
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c)
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d)
θ
θ
θ
θ
JA
JA
JA
JA
173
69
151
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
I
I
= −250 ꢁ A, V = 0 V
−30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 ꢁ A, Referenced to 25°C
−
−24
mV/°C
ꢂ BVDSS
ꢂ TJ
D
−
−
−
−
ꢁ
A
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −24 V, V = 0 V
−1
DSS
GSS
DS
GS
nA
I
=
8 V, V = 0 V
100
GS
DS
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = −250 ꢁ A
−0.4
−0.6
−1.0
V
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
I = −250 ꢁA, Referenced to 25°C
D
−
3
−
mV/°C
ꢂ VGS(th)
ꢂ TJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
= −4.5 V, I = −2.9 A
−
−
−
−
−
71
97
122
151
110
90
mꢀ
DS(on)
D
= −2.5 V, I = −2.6 A,
130
170
240
140
D
= −1.8 V, I = −1.7 A,
D
= −1.5 V, I = −1.0 A,
D
= −4.5 V, I = −2.9 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −2.9 A
−
10
−
S
D
Dynamic Characteristics
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1 MHz
−
−
−
400
55
530
70
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
45
65
rss
Switching Characteristics
t
t
Turn−On Delay Time
Rise Time
V
V
= −15 V, I = −1.0 A,
−
−
−
−
−
−
−
5
10
10
100
33
11
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 Ω
GEN
t
r
4
Turn−Off Delay Time
Fall Time
62
18
7.9
0.9
1.9
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
DD
V
GS
= −15 V, I = −2.9 A,
nC
nC
nC
gTOT
D
= −4.5 V
Q
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
−
gs
gd
Drain−Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
−1.1
−1.2
33
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = −1.1 A (Note 2)
−0.8
18
SD
GS
S
I = −2.9 A, di/dt = 100 A/ꢁ s
F
t
ns
nC
rr
Q
Reverse Recovery Charge
6.6
13
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDMA3023PZ
NOTES:
1. R
2
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
ꢃ
ꢃ
JC
JA
while R
is determined by the user’s board design.
ꢃ
JA
2
(a) R
(b) R
= 86 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For single operation.
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
ꢃJA
ꢃJA
o
2
(c) R
(d) R
= 69 C/W when mounted on a 1 in pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
ꢃJA
o
= 151 C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
ꢃJA
d).151 °C/W when
mounted on a
minimum pad of 2
oz copper.
a).86 °C/W when
b).173 °C/W when
mounted on a
minimum pad of 2
oz copper.
c).69 °C/W when
2
mounted on a 1
mounted on a 1 in
2
in pad of 2 oz
pad of 2 oz copper.
copper.
2. Pulse Test: Pulse Width ≤ 300 ꢁ s, Duty Cycle ≤ 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDMA3023PZ
TYPICAL CHARACTERISTICS Tc = 25 °C unless otherwise noted
6
6
V
GS
= −4.5 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
= −3.5 V
GS
5
4
3
2
5
4
3
2
1
0
V
= −2.5 V
GS
V
GS
= −1.5 V
V
= −1.8 V
GS
V
GS
= −1.5 V
V
= −1.8 V
= −4.5 V
GS
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
= −2.5 V
GS
1
0
V
GS
= −3.5 V
V
GS
0
0.5
1.0
1.5
2.0
1
2
3
4
5
6
−I , DRAIN CURRENT (A)
D
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
400
1.6
1.4
1.2
1.0
I
= −2.9 A
GS
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
D
V
= −4.5 V
300
200
100
0
I = −1.45 A
D
T = 125°C
J
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−V , GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (5C)
J
Figure 3. Normalized On−Resistance vs
Figure 4. On−Resistance vs Gate to
Junction Temperature
Source Voltage
10
6
V
GS
= 0 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
5
4
3
V
DS
= −5 V
1
0.1
T = 125°C
J
T = 25°C
J
T = 125°C
J
2
1
0.01
0.001
T = 25°C
J
T = −55°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs
Source Current
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4
FDMA3023PZ
TYPICAL CHARACTERISTICS Tc = 25 °C unless otherwise noted (CONTINUED)
1000
5
4
3
2
1
0
I
D
= −2.9 A
C
V
DD
= −10 V
V
= −15 V
ISS
DD
100
10
C
OSS
V
= −20 V
DD
C
f = 1 MHz
= 0 V
RSS
V
GS
0
2
4
6
8
10
0.1
1
10
30
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance vs Drain to Source Voltage
Figure 7. Gate Charge Characteristics
−2
−3
10
10
V
GS
= 0 V
THIS AREA IS
LIMITED BY
10
R
1 ms
DS(on)
−4
−5
−6
10
10
10
1
10 ms
100 ms
T = 125°C
J
0.1
T = 25°C
J
−7
1 s
10
SINGLE PULSE
10 s
DC
T
J = MAX RATED
−8
10
10
R
= 173°C/W
ꢃ
JA
T = 25°C
A
−9
0
0.01
0.01
3
6
9
12
15
0.1
1
10
100 200
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Gate Leakage vs Gate to Source Voltage
Figure 10. Forward Bias Safe Operating Area
200
100
V
GS
= −4.5 V
SINGLE PULSE
R
= 173°C/W
ꢃ
JA
T = 25°C
A
10
1
0.5
10
−3
−2
−1
10
10
t, PULSE WIDTH (s)
1
10
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMA3023PZ
TYPICAL CHARACTERISTICS Tc = 25 °C unless otherwise noted (CONTINUED)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
= 173 °C/W
1
2
R
PEAK T = P
x Z
x R
ꢃ
JA
+ T
ꢃ
ꢃ
JA
J
DM
JA
A
0.01
0.005
−3
−2
−1
10
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DA
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
2X
B
1.80
1.72
2.0
0.80(2X)
1.00(2X)
0.21
1.41
0.05
C
2.25
TOP VIEW
2X
0.42(6X)
PIN#1 IDENT
0.42(6X)
(0.10)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN
0.10
C
0.20 0.05
C
0.08
C
0.025 0.025
SEATING
PLANE
SIDE VIEW
NOTES:
A. CONFORM TO JADEC REGISTRATIONS MO−229,
VARIATION VCCC, EXCEPT WHERE NOTED.
2.00 0.05
1.64 0.05
B. DIMENSIONS ARE IN MILLIMETERS.
0.645 0.05
0.350
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
PIN#1 IDENT
(0.185)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
3
0.275 0.05
(6X)
F. NON−JEDEC DUAL DAP
0.86 0.05
2.00 0.05
(0.57)
F
6
4
0.33 0.05
(6X)
0.65
0.10
0.05
C A B
1.30
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13615G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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