FDLL4150 [ONSEMI]
高导通，Ultrafast 二极管;
| 型号： | FDLL4150 |
| 厂家： | 
ONSEMI |
| 描述： | 高导通，Ultrafast 二极管 PC 二极管 |
| 文件： | 总3页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
FDLL4150
Features
MiniMELF/SOD−80
CASE 100AD
• This is a Pb−Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS
MARKING DIAGRAM
(Values are at T = 25°C unless otherwise noted.) (Notes 1 and 2)
A
Cathode Band (Black)
Symbol
Parameter
Working Inverse Voltage
Value
50
Unit
V
W
IV
I
Average Rectified Forward Current
DC Forward Current
200
400
600
1.0
mA
mA
mA
A
O
I
F
F
i
Recurrent Peak Forward Current
I
Non−Repetitive Pulse Width = 1.0 s
FSM
(−1st band denotes cathode terminal
Peak Forward
Current
and has wider width)
Pulse Width = 1.0 ms
4.0
T
Storage Temperature Range
−65 to +200
°C
°C
STG
ORDERING INFORMATION
T
J
Operating Junction Temperature
175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 200_C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low−duty−cycle operations.
†
Device
FDLL4150
Package
Shipping
MiniMELF/SOD−80
2500 /
(Pb−Free/Halide Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Max
1N/FDLL4150
Symbol
Parameter
Power Dissipation
Unit
mW
P
D
500
3.33
300
Derate above 25°C
mW/°C
°C/W
R
Thermal Resistance,
Junction to Ambient
q
JA
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Breakdown Voltage
Test Conditions
Min
75
−
Max
−
Unit
V
B
V
IR = 5.0 mA
I
R
Reverse Current
V
R
V
R
= 50 V
100
100
620
740
860
920
1.0
2.5
4.0
6.0
10
nA
mA
mV
= 50 V, T = 150°C
−
A
V
F
Forward Voltage
I = 1.0 mA
F
540
660
760
820
0.87
−
I = 10 mA
F
I = 50 mA
F
I = 100 mA
F
I = 200 mA
F
V
C
t
Diode Capacitance
V
R
= 0, f = 1.0 MHz
pF
ns
ns
ns
O
Reverse Recovery Time
−
I = I = 10 mA − 200 mA, R = 100 W
rr
F
R
L
I = I = 200 mA − 400 mA, R = 100 W
−
F
R
L
T
FR
Forward Recovery Time
I = 200 mA, V = 1.0 V
−
F
FR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
April, 2023 − Rev. 2
FDLL4150/D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
PAGE 1 OF 1
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