FDG6342L [ONSEMI]
集成式负载开关;型号: | FDG6342L |
厂家: | ONSEMI |
描述: | 集成式负载开关 开关 驱动 光电二极管 接口集成电路 |
文件: | 总6页 (文件大小:379K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDG6342L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 2.5V to 8V
input and 1.5A output current capability are needed. This load
switch integrates a small N-Channel power MOSFET (Q1) that
drives a large P-Channel power MOSFET (Q2) in one tiny
SC70-6 package.
Features
Max rDS(on) = 150mΩ at VGS = 4.5V, ID = –1.5A
Max rDS(on) = 195mΩ at VGS = 2.5V, ID = –1.3A
Max rDS(on) = 280mΩ at VGS = 1.8V, ID = –1.1A
Max rDS(on) = 480mΩ at VGS = 1.5V, ID = –0.9A
Applications
Power management
Load switch
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness ( >4KV Human body model)
High performance trench technology for extremely low rDS(on)
Compact industry standard SC70-6 surface mount package
RoHS Compliant
Q2
Equivalent Circuit
3
Vout,C1
4
Vin,R1
ON/OFF
R1,C1
OUT
IN
VDROP
5
6
2
1
Vout,C1
R2
Q1
ON/OFF
Pin 1
SC70-6
See Application Circuit
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
±8
Units
VIN
VON/OFF
Gate to Source Voltage (Q2)
Gate to Source Voltage (Q1)
V
V
–0.5 to 8
1.5
Load Current
-Continuous
-Pulsed
(Note 2)
ILoad
A
(Note 2)
(Note 1a)
(Note 1b)
6
Power Dissipation for Single Operation
0.36
0.3
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7’’
Tape Width
8mm
Quantity
.2L
FDG6342L
SC70-6
3000units
1
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDG6342L/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVIN
ILoad
IFL
VIN Breakdown Voltage
ID = -250µA, VON/OFF = 0V
8
V
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
V
V
IN = -6.4V, VON/OFF = 0V
IN = 8V, VON/OFF = 0V
–1
10
µA
µA
µA
IRL
VIN = –8V, VON/OFF = 0V
–10
On Characteristics (note 2)
VON/OFF(th) Gate Threshold Voltage
V
IN = VON/OFF, ID = -250µA
0.65
0.8
125
150
200
250
2.6
1.5
150
195
280
480
4.0
V
VIN = 4.5V, ID = –1.5A
VIN = 2.5V, ID = –1.3A
VIN = 1.8V, ID = –1.1A
VIN = 1.5V, ID = –0.9A
Static Drain to Source On Resistance (Q2)
mΩ
rDS(on)
V
IN = 4.5V, ID = 0.4A
Static Drain to Source On Resistance (Q1)
Ω
VIN = 2.7V, ID = 0.2A
3.3
5.0
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
–0.25
–1.2
A
V
VSD
Source to Drain Diode Forward Voltage
V
ON/OFF = 0V, IS = –0.25A (Note 2)
–0.6
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θJA
θJA
θJC
the user's board design.
a. 350°C/W when mounted on a
1 in pad of 2 oz copper .
b. 415°C/W when mounted on
a minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDG6342LLoad Switch Application circuit
Q2
OUT
IN
C1
R1
Q1
ON/OFF
LOAD
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
0.5
0.5
0.4
0.3
0.2
0.1
0.0
VIN = -1.5V
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
VIN = -1.8V
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
0.4
0.3
0.2
0.1
0.0
TJ = 125oC
TJ = 125oC
TJ = 25oC
TJ = 25oC
0.0
0.4
0.8
1.2
1.6
2.0
3.5
4.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I , (A)
-I , (A)
L
L
Figure 1. Conduction Voltage Drop
Variation with Load Current.
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
VIN = -2.5V
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
VIN = -4.5V
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
TJ = 125oC
TJ = 125oC
TJ = 25oC
TJ = 25oC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-I , (A)
-I , (A)
L
L
Figure 3. Conduction Voltage Drop
Variation with Load Current.
Figure 4. Conduction Voltage Drop
Variation with Load Current.
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
IL = -1.3A
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
IL = -1.5A
VON/OFF = 1.5-8V
PW = 300µs, D < 2%
0.5
0.4
0.3
0.2
0.1
0.0
TJ = 125oC
TJ = 125oC
TJ = 25oC
TJ = 25oC
1.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
2.0
2.5
3.0
3.5
4.0
4.5
-VIN, INPUT VOLTAGE (V)
-VIN, INPUT VOLTAGE (V)
Figure 5. On-Resistance Variation
With Input Voltage
Figure6. On-Resistance Variation
With Input Voltage
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3
Dimensional Outline and Pad Layout
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any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
worldwide terms
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s
and conditions,
specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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