FDG6321C-F169 [ONSEMI]
双 N 和 P 沟道数字 FET 25V;
| 型号： | FDG6321C-F169 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道数字 FET 25V |
| 文件： | 总9页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Digital FET, Dual N & P
Channel
S2
G2
D1
D2
G1
FDG6321C
S1
SC−88/SC70−6/SOT−363
CASE 419B−02
General Description
These dual N & P−Channel logic level enhancement mode field
effect transistors are produced using onsemi’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on−state resistance. This device has
been designed especially on low voltage replacement for bipolar
digital transistors and small signal MOSFETS. Since bias resistors are
not required, this dual digital FET can replace several different digital
transistors, with different bias resistor values.
MARKING DIAGRAM
21M
21
M
= Specific Device Code
= Assembly Operation Month
Features
• N−Ch 0.50 A, 25 V
♦ R
♦ R
= 0.45 W @ V = 4.5 V
GS
DS(ON)
= 0.60 W @ V = 2.7 V
DS(ON)
GS
PIN CONNECTIONS
• P−Ch −0.41 A, −25 V
♦ R
♦ R
= 1.1 W @ V = −4.5 V
GS
DS(ON)
= 1.5 W @ V = −2.7 V
DS(ON)
GS
1
6
• Very Small Package Outline SC70−6
• Very Low Level Gate Drive Requirements Allowing Direct
2
3
5
4
Operation in 3 V Circuits (V
< 1.5 V)
GS(th)
• Gate−Source Zener for ESD Ruggedness (>6 kV Human Body
Model)
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Drain Current Continuous
Pulsed
N−Channel P−Channel Units
V
DSS
25
8
−25
−8
V
V
A
ORDERING INFORMATION
V
GSS
†
Device
Package
Shipping
I
D
0.5
1.5
−0.41
−1.2
FDG6321C
SC−88/SC70−6/
SOT−363
3000 /
Tape & Reel
(Pb−Free)
P
Maximum Power Dissipation
(Note 1)
0.3
W
°C
kV
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T , T
Operating and Storage
Temperature Range
−55 to 150
J
STG
ESD
Electrostatic Discharge
Rating MIL−STD−883D
Human Body Model (100 pF /
1500 W)
6
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 1998
1
Publication Order Number:
May, 2023 − Rev. 6
FDG6321C/D
FDG6321C
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction−to−Ambient (Note 1)
415
_C/W
q
JA
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design. R
= 415°C/W on
q
q
q
JC
CA
JA
minimum pad mounting on FR−4 board in still air.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Unit
V
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
25
−25
−
−
−
−
−
V
V
I
= 0 V, I = 250 mA
DSS
GS
D
= 0 V, I = −250 mA
GS
D
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
= −250 mA, Referenced to 25_C
26
−22
−
−
mV/_C
mA
DSS
J
D
I
D
−
−
I
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
V
DS
V
DS
V
DS
V
DS
V
GS
V
GS
= 20 V, V = 0 V
−
1
DSS
GS
= 20 V, V = 0 V, T = 55_C
−
−
10
−1
−10
100
GS
J
I
I
= −20 V, V = 0 V
P−Ch
−
−
mA
GSS
GS
= −20 V, V = 0 V, T = 55_C
−
−
GS
J
= 8 V, V = 0 V
N−Ch
P−Ch
−
−
nA
GSS
DS
= −8 V, V = 0 V
−
−
−100
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
0.65
0.8
−0.82
−2.6
2.1
1.5
−1.5
−
V
mV/_C
W
V
V
I
= V , I = 250 mA
DS
GS
D
= V , I = −250 mA
−0.65
DS
GS
D
DV
/ DT
Gate Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25_C
= −250 mA, Referenced to 25_C
−
−
−
−
−
−
−
GS(th)
J
D
I
D
−
R
Static Drain−Source
On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
= 4.5 V, I = 0.5 A
0.34
0.55
0.44
0.85
1.2
0.45
0.72
0.6
1.1
1.8
DS(ON)
D
= 4.5 V, I = 0.5 A, T = 125_C
D
J
= 2.7 V, I = 0.2 A
D
= −4.5 V, I = −0.41 A
P−Ch
D
= −4.5 V, I = −0.41 A,
D
T = 125_C
J
V
GS
V
GS
V
GS
V
DS
V
DS
= −2.7 V, I = −0.05 A
−
0.5
−0.41
−
1.15
−
1.5
−
D
I
On−State Drain Current
= 4.5 V, V = 5 V
N−Ch
P−Ch
N−Ch
P−Ch
A
S
D(ON)
DS
= −4.5 V, V = −5 V
−
−
DS
g
FS
Forward Transconductance
= 5 V, I = 0.5 A
1.45
0.9
−
D
= −5 V, I = −0.41 A
−
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N−Channel
= 10 V, V = 0 V, f = 1.0 MHz
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
−
−
−
−
−
−
50
62
28
34
9
−
−
−
−
−
−
pF
iss
V
DS
GS
P−Channel
= −10 V, V = 0 V,
C
Output Capacitance
oss
V
DS
GS
f = 1.0 MHz
C
Reverse Transfer Capacitance
rss
10
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2
FDG6321C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
A
Symbol
SWITCHING CHARACTERISTICS (Note 2)
Parameter
Conditions
Type
Min
Typ
Max
Unit
ns
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
N−Channel
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
−
−
−
−
−
−
−
−
−
−
−
−
−
−
3
7
6
15
18
16
30
80
25
60
2.3
1.5
−
D(on)
V
DD
V
GS
= 5 V, I = 0.5 A,
D
= 4.5 V, R
= 50 W
GEN
t
r
8.5
8
ns
P−Channel
V
DD
V
GS
= −5 V, I = −0.5 A,
D
= −4.5 V, R
= 50 W
GEN
t
17
ns
D(off)
55
t
f
13
ns
35
Q
N−Channel
1.64
1.1
0.38
0.31
0.45
0.29
nC
nC
nC
g
V
DS
V
GS
= 5 V, I = 0.5 A,
D
= 4.5 V
Q
gs
P−Channel
V
DS
V
GS
= −5 V, I =−0.41 A,
D
−
= −4.5 V
Q
−
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
N−Ch
P−Ch
N−Ch
P−Ch
−
−
−
−
−
−
0.25
−0.25
1.2
A
V
V
SD
Drain−Source Diode Forward
Voltage
V
V
= 0 V, I = 0.5 A (Note 2)
0.8
−0.8
GS
S
= 0 V, I = −0.5 A (Note 2)
−1.2
GS
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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3
FDG6321C
TYPICAL PERFORMANCE CHARACTERISTICS: N−CHANNEL
2
1.5
1.2
0.9
0.6
0.3
0
V
= 4.5 V
GS
2.5 V
3.0 V
2.7 V
V
= 2.0 V
GS
2.0 V
1.5
1
2.5 V
2.7 V
3.0 V
3.5 V
4.5 V
1.5 V
0.5
0
0.2
0.4
0.6
0.8
1
1.2
0
0.5
1
1.5
2
2.5
3
I
, DRAIN CURRENT (A)
D
V
, DRAIN−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2
1.6
I
= 0.3 A
D
I
= 0.5 A
D
1.6
1.2
0.8
0.4
0
1.4
1.2
1
V
= 4.5 V
GS
T = 125°C
A
0.8
0.6
T = 25°C
A
1
1.5
2
2.5
3
3.5
4
4.5
5
−50
−25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
1
1
VGS = 0 V
T = −55°C
J
V
= 5.0 V
DS
25°C
125°C
0.8
0.6
0.4
0.2
0
T = 125°C
J
0.1
25°C
−55°C
0.01
0.001
0.0001
0.2
V
0.4
0.6
0.8
0
1
1.2
0
0.5
1
1.5
2
2.5
, BODY DIODE FORWARD VOLTAGE (V)
SD
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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4
FDG6321C
TYPICAL PERFORMANCE CHARACTERISTICS: N−CHANNEL (CONTINUED)
200
5
4
3
2
1
0
ID = 0.5 A
VDS = 5 V
10 V
15 V
70
C
C
iss
30
oss
10
C
f = 1 MHz
rss
VGS = 0 V
3
0.1
0.3
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
3
1
50
40
30
20
10
SINGLE PULSE
R
= 415°C/W
q
JA
T
A
= 25°C
0.5
0.2
0.1
V
= 4.5 V
GS
0.05
SINGLE PULSE
R
T
A
= 415°C/W
= 25°C
q
JA
0.02
0.01
0
0.0001
0.001
0.01
0.1
1
10
200
0.1
1
2
5
10
25 40
SINGLE PULSE TIME (sec)
V
, DRAI N−SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
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5
FDG6321C
TYPICAL PERFORMANCE CHARACTERISTICS: P−CHANNEL
1.2
0.9
0.6
0.3
0
2.5
V
=−4.5 V
−3.0 V
−2.7 V
GS
−2.5 V
V
= −2.0 V
2
1.5
1
GS
−2.5 V
−2.7 V
−2.0 V
−3.0 V
−3.5 V
−4.5 V
−1.5 V
0.5
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
−V , DRAIN−SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 11. On−Region Characteristics
Figure 12. On−Resistance Variation
with Drain Current and Gate Voltage
1.6
5
4
3
2
1
0
I
=−0.2 A
D
ID = −0.41 A
VGS = −4.5 V
1.4
1.2
1
T =125°C
J
0.8
0.6
25°C
−50
−25
0
25
50
75
100
125
150
1
2
3
4
5
T
, JUNCTION TEMPERATURE (°C)
−V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 13. On−Resistance Variation with
Figure 14. On−Resistance Variation
with Gate−to−Source Voltage
Temperature
1
1
V
= 0 V
T = −55°C
J
GS
V
= −5 V
DS
25°C
T = 125°C
0.8
0.6
0.4
0.2
0
J
0.1
125°C
25°C
0.01
−55°C
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 15. Transfer Characteristics
Figure 16. Body Diode Forward Voltage
Variation with Source Current and Temperature
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FDG6321C
TYPICAL PERFORMANCE CHARACTERISTICS: P−CHANNEL (CONTINUED)
5
4
3
2
1
0
200
ID = −0.41 A
VDS = −5 V
−10 V
80
−15 V
C
iss
30
C
oss
10
C
rss
f = 1 MHz
V
= 0 V
5
3
GS
0.1
0.3
1
2
5
10
25
0
0.4
0.8
1.2
1.6
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 17. Gate Charge Characteristics
Figure 18. Capacitance Characteristics
3
50
40
30
20
10
SINGLE PULSE
R
= 415°C/W
q
JA
1
T
A
= 25°C
0.5
0.1
V
= −4.5 V
GS
0.05
SINGLE PULSE
R
= 415°C/W
q
JA
T
A
= 25°C
0.01
0
0.1
0.2
0.5
1
2
5
10
25 40
0.0001
0.001
0.01
0.1
1
10
200
− V
, DRAIN−SOURCE VOLTAGE (V)
SINGLE PULSE TIME (sec)
DS
Figure 19. Maximum Safe Operating Area
Figure 20. Single Pulse Maximum Power
Dissipation
TYPICAL PERFORMANCE CHARACTERISTICS: N & P−CHANNEL
1
D = 0.5
0.5
0.2
0.1
0.05
R
R
(t) = r(t) * R
= 415°C/W
0.2
0.1
q
q
JA
JA
qJA
0.05
P(pk)
0.02
0.01
Single Pulse
0.02
0.01
t1
t 2
T
− T = P * R
(t)
q
JA
J
A
0.005
Duty Cycle, D = t / t
1
2
0.002
0.0001
0.001
0.01
0.1
1
10
100 200
t , TIME (sec)
1
Figure 21. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88 (SC−70 6 Lead), 1.25x2
CASE 419AD
ISSUE A
DATE 07 JUL 2010
1
SYMBOL
MIN
NOM
MAX
D
0.80
A
1.10
e
e
A1
A2
0.00
0.80
0.10
1.00
b
c
0.15
0.10
1.80
1.80
1.15
0.30
0.18
2.20
2.40
1.35
D
2.00
2.10
E1
E
E
E1
e
1.25
0.65 BSC
0.36
L
0.26
0.46
L1
L2
0.42 REF
0.15 BSC
TOP VIEW
0º
4º
8º
θ
10º
θ1
q1
A2
A1
A
q
L
b
L1
q1
c
L2
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34266E
SC−88 (SC−70 6 LEAD), 1.25X2
PAGE 1 OF 1
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