FDG332PZ [ONSEMI]
P 沟道,PowerTrench® MOSFET,-20V,-2.6A,97mΩ;型号: | FDG332PZ |
厂家: | ONSEMI |
描述: | P 沟道,PowerTrench® MOSFET,-20V,-2.6A,97mΩ 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:334K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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December 2008
FDG332PZ
P-Channel PowerTrench® MOSFETꢀ
tm
-20V, -2.6A, 97m:
Features
General Description
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench® process. It has been optimized for
battery power management applications.
Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A
Applications
Battery management
Very low level gate drive requirements allowing operation
in 1.5V circuits
Load switch
Very small package outline SC70-6
RoHS Compliant
S
D
D
D
S
D
D
D
G
G
D
D
SC70-6
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
-20
8
V
V
Drain Current
-Continuous
-Pulsed
-2.6
ID
A
-9
Power Dissipation
Power Dissipation
(Note 1a)
0.75
PD
W
(Note 1b)
0.48
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RTJA
RTJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
170
260
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
.2P
FDG332PZ
SC70-6
1
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
-20
V
'BVDSS
ꢀꢀꢀ'TJ
Breakdown Voltage Temperature
Coefficient
ID = -250PA, referenced to 25°C
-13
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16V, VGS = 0V
-1
PA
PA
VGS
=
8V, VDS= 0V
10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
D = -250PA, referenced to 25°C
VGS = -4.5V, ID = -2.6A
GS = -2.5V, ID = -2.2A
-0.4
-0.7
2.5
-1.5
V
ꢀ'VGS(th)
ꢀꢀꢀ'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
73
90
95
V
115
160
330
133
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
VGS = -1.8V, ID = -1.9A
117
147
100
9
m:
VGS = -1.5V, ID = -1.0A
VGS = -4.5V, ID = -2.6A , TJ = 125°C
VDD = -5V, ID = -2.6A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
420
85
560
115
115
pF
pF
pF
Output Capacitance
VDS = -10V, VGS = 0V, f = 1MHZ
Reverse Transfer Capacitance
75
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
5.2
4.8
59
10
10
ns
ns
VDD = -10V, ID = -2.6A,
GS = -4.5V, RGEN = 6:
V
Turn-Off Delay Time
Fall Time
95
ns
28
45
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
7.6
0.9
1.9
10.8
nC
nC
nC
Qgs
Qgd
VGS = -4.5V, VDD = -10V, ID = -2.6A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.6
-1.2
45
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -0.6A
(Note 2)
-0.7
28
8
ns
nC
IF = 2.6A, di/dt = 100A/Ps
Qrr
Reverse Recovery Charge
13
Notes:
1. R
2
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
the user's board design.
is guaranteed by design while R
is determined by
TCA
TJA
TJC
a. 170°C/W when mounted on
2
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
a 1 in pad of 2 oz copper .
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
9
2.5
2.0
1.5
1.0
0.5
V
= -4.5V
GS
V
= -3V
VGS = -1.5V
GS
V
= -2.5V
GS
6
3
0
VGS = -1.8V
V
= -1.8V
GS
VGS = -2.5V
V
= -1.5V
GS
VGS = -4.5V
VGS = -3V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
0.0
0.4
0.8
1.2
1.6
2.0
0
3
6
9
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
300
250
200
150
100
50
ID = -2.6A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
ID = -2.6A
TJ = 125oC
TJ = 25oC
-50 -25
0
25
50
75
100 125 150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure3. Normalized On-Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
9
4
VGS = 0V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
1
VDD = -5V
6
3
TJ = 150oC
0.1
0.01
1E-3
TJ = 25oC
TJ = -55oC
TJ = 150oC
TJ = 25oC
TJ = -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
1000
4.5
Ciss
ID = -2.6A
VDD = -5V
3.0
VDD = -10V
Coss
VDD = -15V
100
30
1.5
Crss
f = 1MHz
= 0V
V
GS
0.0
20
0.1
1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0
2
4
6
8
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
105
104
103
102
101
100
10-1
10-2
10-3
10-4
10
100us
VGS = 0V
1ms
1
0.1
TJ = 150oC
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
SINGLE PULSE
TJ = MAX RATED
TJ = 25oC
1s
10s
DC
RTJA = 260oC/W
T
A = 25oC
0.01
0
5
10
15
20
0.1
1
10
50
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. Forward Bias Safe
Operating Area
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
VGS = -4.5V
10
1
SINGLE PULSE
RTJA = 260oC/W
T
A = 25oC
0.1
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
101
102
103
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
RTJA = 260oC/W
PEAK T = P
J
x Z
x R
+ T
qJA A
DM
qJA
0.01
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
101
102
103
Figure 12. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
Build it Now™
CorePLUS™
FRFET
Global Power Resource
Green FPS™
Programmable Active Droop™
®
SM
QFET
QS™
TinyBoost™
TinyBuck™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
®
Green FPS™ e-Series™
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
PSerDes™
EcoSPARK
EfficentMax™
ISOPLANAR™
MegaBuck™
™
Saving our world, 1mW /W /kW at a time™
EZSWITCH™ *
™
MICROCOUPLER™
MicroFET™
MicroPak™
SmartMax™
SMART START™
SPM
®
MillerDrive™
MotionMax™
Motion-SPM™
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
®
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
UHC
®
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOLOGIC
OPTOPLANAR
®
®
®
FACT
FAST
®
tm
FastvCore™
®
PDP SPM™
Power-SPM™
FlashWriter
FPS™
F-PFS™
*
®
The Power Franchise
®
PowerTrench
PowerXS™
®
* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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