FDD6030L [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ;
| 型号： | FDD6030L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，12A，14.5mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDD6030L
30V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
·
12 A, 30 V
RDS(ON) = 14.5 mW @ VGS = 10 V
RDS(ON) = 21 mW @ VGS = 4.5 V
·
·
·
Low gate charge
Fast Switching Speed
Applications
·
·
DC/DC converter
Motor Drives
High performance trench technology for extremely
low RDS(ON)
D
D
G
G
S
D-PAK
(TO-252)
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
±20
ID
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
50
12
100
Pulsed
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
56
(Note 1a)
(Note 1b)
3.2
1.5
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
RqJC
RqJA
RqJA
°C/W
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
16mm
Quantity
2500 units
FDD6030L
FDD6030L
D-PAK (TO-252)
13’’
FDD6030L Rev. 2.3
Ó2003 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
IAS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID= 12A
100
12
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
24
ID = 250 mA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V,
VGS = 0 V
1
mA
IGSS
nA
VGS = ±20 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
–5
3
V
VDS = VGS
,
ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = 250 mA,Referenced to 25°C
mV/°C
7.7
9.9
11.4
14.5
21
25
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
ID = 12 A
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 5 V
ID = 12 A
50
A
S
Forward Transconductance
47
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1230
325
150
1.5
pF
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
7
19
13
46
21
28
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
29
12
13
3.5
5.1
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15V,
ID = 12 A,
V
GS = 5 V
FDD6030L Rev. 2.3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.7
1.2
A
V
VSD
trr
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
0.76
24
VGS = 0 V, IS = 2.7 A
IF = 12 A, diF/dt = 100 A/µs
(Note 2)
nS
nC
Qrr
13
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 45°C/W when mounted on a
b)
R
qJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6030L Rev. 2.3
Typical Characteristics
100
1.8
1.6
1.4
1.2
1
VGS = 10.0V
6.0V
4.5V
5.0V
VGS = 3.5V
4.0V
80
60
40
20
0
4.0V
4.5V
3.5V
5.0V
6.0V
10.0V
3.0V
0.8
0
20
40
ID, DRAIN CURRENT (A)
60
80
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
1.6
1.4
1.2
1
ID = 12A
VGS = 10V
ID = 6A
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
90
VGS = 0V
TA =-55oC
VDS = 5V
100
10
75
60
45
30
15
0
TA = 125oC
125oC
25oC
1
-55oC
25oC
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.5
2
2.5
3
3.5
4
4.5
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6030L Rev. 2.3
Typical Characteristics
10
1800
1500
1200
900
600
300
0
f = 1MHz
VGS = 0 V
ID = 12 A
VDS = 10V
20V
8
6
4
2
0
Ciss
15V
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
RqJA = 96°C/W
RDS(ON) LIMIT
100µs
TA = 25°C
1ms
10ms
100ms
1s
10
1
DC
VGS = 4.5V
SINGLE PULSE
R
qJA = 96oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
R
qJA(t) = r(t) * RqJA
0.2
RqJA = 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6030L Rev. 2.3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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