FDC8602 [ONSEMI]
双 N 沟道屏蔽门极 PowerTrench® MOSFET，100 V，1.2 A，350 mΩ;
| 型号： | FDC8602 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道屏蔽门极 PowerTrench® MOSFET，100 V，1.2 A，350 mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual,
N-Channel, Shielded Gate,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
350 mW @ 10 V
575 mW @ 6 V
100 V
1.2 A
100 V, 1.2 A, 350 mW
D2
S1
D1
FDC8602
General Description
G2
S2
G1
Pin 1
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
technology. This process has been optimized for R , switching
DS(on)
performance and ruggedness.
MARKING DIAGRAM
Features
• Shielded Gate MOSFET Technology
• Max R
• Max R
= 350 mW at V = 10 V, I = 1.2 A
GS D
DS(on)
862 M
= 575 mW at V = 6 V, I = 0.9 A
DS(on)
GS
D
1
• High Performance Trench Technology for Extremely Low R
DS(on)
862 = Specific Device Code
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
M
= Date Code
• Fast Switching Speed
PIN ASSIGNMENT
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
4
5
6
3
2
1
Applications
• Load Switch
• Synchronous Rectifier
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Value
100
20
Unit
V
V
DS
V
GS
V
I
D
Drain Current:
Continuous (Note 1a)
Pulsed
A
ORDERING INFORMATION
1.2
5
†
E
Single Pulse Avalanche Energy (Note 3)
1.5
mJ
W
Device
Package
Shipping
AS
P
Power Dissipation:
(Note 1a)
(Note 1b)
FDC8602
TSOT23 6−Lead
(Pb−Free)
3000 /
D
0.96
0.69
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T , T
Operating and Storage Junction
Temperature Range
−55 to
°C
J
STG
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2023 − Rev. 3
FDC8602/D
FDC8602
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
60
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
130
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
73
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
3.2
4
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−8
−
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 1.2 A
−
−
−
−
285
409
489
1.3
350
575
600
−
mW
DS(on)
D
= 6 V, I = 0.9 A
D
= 10 V, I = 1.2 A, T = 125°C
D
J
g
FS
= 10 V, I = 1.2 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
53
17
70
25
5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
0.8
1.6
rss
R
−
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 1.2 A, V = 10 V,
GEN
−
−
−
−
−
3.5
1.7
5.4
2.3
1.2
10
10
11
10
2
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
DD
= 1.2 A
g(TOT)
GS
I
D
V
D
= 0 V to 5 V, V = 50 V,
−
0.6
1
nC
GS
DD
I
= 1.2 A
Q
Q
Gate to Source Charge
V
DD
V
DD
= 50 V, I = 1.2 A
−
−
0.4
0.4
−
−
nC
nC
gs
D
Gate to Drain “Miller” Charge
= 50 V, I = 1.2 A
D
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 1.2 A (Note 2)
−
−
−
0.86
27
1.3
43
21
V
SD
GS
S
t
I = 1.2 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
12
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDC8602
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
b) 180°C/W when mounted on
a) 130°C/W when mounted on
2
a minimum pad of 2 oz copper.
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; N−ch: L = 3 mH, I = 1 A, V = 100 V, V = 10 V.
J
AS
DD
GS
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3
FDC8602
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
4
5
4
V
= 8 V
V
GS
= 10 V
GS
V
= 5 V
GS
V
= 7 V
GS
V
= 6 V
V
GS
3
2
= 7 V
3
2
1
0
GS
V
= 6 V
= 5 V
GS
V
= 8 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1
0
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1200
900
600
300
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 1.2 A
I
= 1.2 A
D
D
= 10 V
GS
T = 125°C
J
1.2
1.0
T = 25°C
J
0.8
0.6
10
25 50
75 100 125 150
5
6
7
8
9
−75 −50 −25
0
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
5
4
3
10
1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
0.1
2
1
0
T = 150°C
J
T = −55°C
J
0.01
T = 25°C
J
T = −55°C
J
0.001
0.2
2
3
4
5
6
7
8
0.4
0.6
0.8
1.0
1.2
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
FDC8602
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
500
I
D
= 1.2 A
C
C
V
= 50 V
iss
DD
V
DD
= 25 V
V
DD
= 75 V
10
oss
6
4
2
0
1
C
rss
f = 1 MHz
V
GS
= 0 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
10
, Drain to Source Voltage (V)
DS
100
1
Q , Gate Charge (nC)
V
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
10
1
2
1
100 ms
T = 25°C
J
1 ms
THIS AREA IS
LIMITED BY R
T = 100°C
J
0.1
10 ms
DS(on)
SINGLE PULSE
T = MAX RATED
100 ms
J
1 s
T = 125°C
J
R
= 180°C/W
q
JA
10 s
DC
0.01
T = 25°C
A
0.1
0.01
0.005
10
, Drain to Source Voltage (V)
0.1
1
10
0.1
1
100
400
V
t
, Time in Avalanche (ms)
DS
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
SINGLE PULSE
100
V
GS
= 10 V
R
= 180°C/W
q
JA
T = 25°C
A
10
1
0.5
−4
−3
−2
−1
10
1
10
10
10
10
100
1000
t, Pulse Width (s)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDC8602
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
= 180°C/W
NOTES:
DUTY FACTOR: D = t /t
1 2
R
q
JA
0.01
PEAK T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
0.005
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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