FDC6333C [ONSEMI]
N 和 P 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDC6333C |
| 厂家： | 
ONSEMI |
| 描述： | N 和 P 沟道，PowerTrench® MOSFET，30V 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N & P-Channel,
POWERTRENCH)
30 V
V
R
MAX
I MAX
D
DSS
DS(ON)
Q1
Q2
30 V
95 mW @ 10 V
2.5 A
150 mW @ 4.5 V
−30 V
130 mW @ −10 V −2.0 A
220 mW @ −4.5 V
FDC6333C
General Description
These N & P−Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize on−state resistance and yet maintain superior switching
performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the bigger
more expensive SO−8 and TSSOP−8 packages are impractical.
Pin 1
TSOT−23−6
CASE 419BL
MARKING DIAGRAM
Features
• Q1 2.5 A, 30 V
♦ R
♦ R
= 95 mW @ V = 10 V
DS(on)
GS
333 MG
= 150 mW @ V = 4.5 V
G
DS(on)
GS
• Q2 −2.0 A, −30 V
1
♦ R
♦ R
= 130 mW @ V = −10 V
GS
= 220 mW @ V = −4.5 V
DS(on)
333 = Specific Device Code
DS(on)
GS
M
= Assembly Operation Month
G
= Pb−Free Package
• Low Gate Charge
(Note: Microdot may be in either location)
• High Performance Trench Technology for Extremely Low R
DS(on)
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
SO−8); Low Profile (1 mm Thick)
PINOUT
• This is a Pb−Free Device
Q2(P)
Applications
4
5
6
3
2
1
• DC−DC Converter
• Load Switch
• LCD Display Inverter
Q1(N)
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2022 − Rev. 5
FDC6333C/D
FDC6333C
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
Ratings
Q1
30
16
2.5
8
Q2
−30
25
Symbol
Parameter
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
DSS
GSS
V
V
I
D
Drain Current – Continuous (Note 1a)
Drain Current – Pulsed
−2.0
−8
A
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
W
0.7
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
130
Unit
°C/W
°C/W
R
q
JA
JC
R
60
q
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 130°C/W when mounted on a
b. 140°C/W when mounted on a
c. 180°C/W when mounted
on a minimum pad.
2
2
0.125 in pad of 2 oz. copper.
0.004 in pad of 2 oz. copper.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
OFF CHARACTERISTICS
BV
Drain–Source Breakdown
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
−30
−
−
−
−
−
V
V
I
= 0 V, I = 250 mA
DSS
GS
D
Voltage
= 0 V, I = −250 mA
GS
D
Breakdown Voltage
Temperature Coefficient
27
−22
−
−
mV/°C
mA
= 250 mA, Ref. to 25°C
= −250 mA, Ref. to 25°C
DBVDSS
DTJ
D
I
D
−
−
I
Zero Gate Voltage Drain
Current
V
DS
V
DS
V
GS
V
GS
V
GS
V
GS
= 24 V, V = 0 V
−
1
DSS
GS
= −24 V, V = 0 V
−
−
−1
GS
I
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
= 16 V, V = 0 V
−
−
100
100
−100
−100
nA
GSSF
GSSR
DS
= 25 V, V = 0 V
−
−
DS
I
= −16 V, V = 0 V
−
−
nA
DS
= −25 V, V = 0 V
−
−
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
Q1
Q2
Q1
Q2
1
−1
−
1.8
−1.8
4
3
−3
−
V
V
V
I
= V , I = 250 mA
GS(th)
DS
GS D
= V , I = −250 mA
DS
GS
D
Gate Threshold Voltage
Temperature Coefficient
mV/°C
= 250 mA, Ref. to 25°C
= −250 mA, Ref. to 25°C
DVGS(th)
DTJ
D
I
D
−
−4
−
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2
FDC6333C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.) (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 2)
R
Static Drain–Source
On–Resistance
Q1
Q2
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
V
DS
= 10 V, I = 2.5 A
−
−
73
90
106
95
142
149
−
95
150
148
130
220
216
−
mW
DS(on)
D
= 4.5 V, I = 2.0 A
D
= 10 V, I = 2.5 A, T = 125°C
−
D
J
= −10 V, I = −2.0 A
−
D
= −4.5 V, I = −1.7 A
−
D
= 10 V, I = −2.0 A, T = 125°C
−
D
J
I
On–State Drain Current
Q1
Q2
Q1
Q2
= 10 V, V = 5 V
8
A
S
D(on)
DS
= −10 V, V = −5 V
−8
−
−
−
DS
g
FS
Forward Transconductance
= 5 V, I = 2.5 A
7
−
D
= −5 V, I = −2.0 A
−
3
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
V
DS
V
DS
V
DS
V
DS
V
DS
V
DS
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
−
−
−
282
185
49
−
−
−
−
−
−
pF
iss
GS
= −15 V, V = 0 V, f = 1.0 MHz
GS
C
Output Capacitance
= 15 V, V = 0 V, f = 1.0 MHz
GS
oss
= −15 V, V = 0 V, f = 1.0 MHz
56
GS
C
Reverse Transfer Capacitance
= 15 V, V = 0 V, f = 1.0 MHz
20
rss
GS
= −15 V, V = 0 V, f = 1.0 MHz
26
GS
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
For Q1:
−
−
−
−
−
−
−
−
−
−
−
−
−
−
4.5
4.5
6
9
9
ns
d(on)
V
DS
V
GS
= 15 V, I = 1 A,
DS
= 10 V, R
= 6 W
GEN
For Q2:
t
r
12
23
34
20
3
V
DS
V
GS
= −15 V, I = −1 A,
= −10 V, R
DS
GEN
13
19
11
= 6 W
t
d(off)
t
f
1.5
2
4
Q
For Q1:
4.7
4.1
0.9
0.8
0.6
0.4
6.6
5.7
−
nC
g
V
DS
V
GS
= 15 V, I = 2.5 A,
= 10 V, R
DS
GEN
= 6 W
For Q2:
Q
gs
V
DS
V
GS
= −15 V, I = −2.0 A,
= −10 V
DS
−
Q
−
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous
Drain–Source Diode Forward
Current
Q1
Q2
Q1
Q2
−
−
−
−
−
−
0.8
−0.8
1.2
A
V
S
V
SD
Drain–Source Diode Forward
Voltage
V
V
= 0 V, I = 0.8 A (Note 2)
0.8
0.8
GS
S
= 0 V, I = 0.8 A (Note 2)
−1.2
GS
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
FDC6333C
TYPICAL CHARACTERISTICS: N−CHANNEL
2.0
10
8
V
= 3.0 V
4.5 V
6.0 V
V
GS
= 10 V
GS
3.5 V
1.8
1.6
3.5 V
6
4.0 V
4.5 V
1.4
1.2
1.0
0.8
3.0 V
4
2
0
6.0 V
10 V
0
1
2
3
0
2
4
6
8
10
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
0.25
1.6
1.4
I
V
= 2.5 A
D
I
D
= 1.25 A
= 10 V
GS
0.20
0.15
1.2
1.0
0.8
0.6
T = 125°C
A
0.10
0.05
T = 25°C
A
−50
−25
0
25
50
75
100 125
150
2
4
6
8
10
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
10
100
V = 0 V
GS
T = −55°C
A
V
DS
= 5 V
25°C
10
1
8
125°C
T = 125°C
A
6
4
0.1
25°C
0.01
−55°C
2
0
0.001
0.0001
1.5
2
2.5
3
3.5
4
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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4
FDC6333C
TYPICAL CHARACTERISTICS: N−CHANNEL (continued)
400
10
8
f = 1 MHz
= 0 V
I
D
= 2.5 A
V
DS
= 5 V
15 V
V
GS
10 V
300
200
100
0
C
ISS
6
4
2
0
C
OSS
C
RSS
0
1
2
3
4
5
0
5
10
15
20
25
30
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
5
4
Single Pulse
= 180°C/W
T = 25°C
A
R
q
JA
R
Limit
DS(on)
10 ms
100 ms
3
2
1 ms
1
10 ms
V
= 10 V
100 ms
GS
0.1
Single Pulse
= 180°C/W
1
0
1 s
DC
R
q
JA
T = 25°C
A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
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5
FDC6333C
TYPICAL CHARACTERISTICS: P−CHANNEL
3
10
8
V
GS
= −10 V
V
GS
= −3.5 V
−6.0 V
−4.5 V
−4.0 V
2.5
2
−4.5 V
−4.0 V
6
4
−5.0 V
−6.0 V
−10 V
1.5
1
−3.5 V
2
0
0.5
0
1
2
3
4
5
0
2
4
6
8
10
−I , Drain Current (A)
D
−V , Drain−Source Voltage (V)
DS
Figure 11. On−Region Characteristics
Figure 12. On−Resistance Variation with
Drain Current and Gate Voltage
0.4
0.3
0.2
0.1
0
1.6
1.4
I
V
= −2 A
D
I
D
= −1 A
= −10 V
GS
T = 125°C
A
1.2
1.0
0.8
0.6
T = 25°C
A
−50
−25
0
25
50
75
100 125 150
2
4
6
8
10
T , Junction Temperature (°C)
J
−V , Gate to Source Voltage (V)
GS
Figure 13. On−Resistance Variation with
Figure 14. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
5
4
3
2
1
10
1
25°C
125°C
V
GS
= 0 V
V
DS
= −5 V
T = −55°C
A
T = 125°C
A
0.1
−55°C
25°C
0.01
0.001
0
1.5
0.0001
2.5
3.5
4.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 15. Transfer Characteristics
Figure 16. Body Diode Forward Voltage
Variation with Source Current and Temperature
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FDC6333C
TYPICAL CHARACTERISTICS: P−CHANNEL (continued)
10
8
300
f = 1 MHz
= 0 V
I
D
= −2.0 A
−10 V
V
DS
= −5 V
V
GS
250
200
150
100
C
ISS
6
−15 V
4
2
C
OSS
50
0
C
RSS
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Q , Gate Charge (nC)
g
−V , Drain to Source Voltage (V)
DS
Figure 17. Gate Charge Characteristics
Figure 18. Capacitance Characteristics
5
4
3
100
10
Single Pulse
= 180°C/W
T = 25°C
A
R
q
JA
R
Limit
DS(ON)
10 ms
100 ms
1 ms
1
0.1
10 ms
2
1
0
100 ms
V
= 10 V
GS
Single Pulse
= 180°C/W
1 s
DC
R
q
JA
T = 25°C
A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 19. Maximum Safe Operating Area
Figure 20. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
R
R
(t)= r(t) + R
q
JA
q
JA
0.05
0.02
180°C/W
q
JA =
P(pk)
t
0.01
1
0.01
t
2
Single Pulse
T − T = P * R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
1000
0.001
0.01
0.1
1
10
100
t , Time (s)
1
Figure 21. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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7
FDC6333C
ORDERING INFORMATION
†
Device
FDC6333C
Device Marking
333
Package Type
Reel Size
Tape Width
Shipping
TSOT−23−6
(Pb−Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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