FDC6303N [ONSEMI]
双 N 沟道，数字 FET，25V，0.68A，0.45Ω;
| 型号： | FDC6303N |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，数字 FET，25V，0.68A，0.45Ω 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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August 1997
FDC6303N
Digital FET, Dual N-Channel
General Description
Features
25 V, 0.68 A continuous, 2 A Peak.
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially for
RDS(ON) = 0.6 W @ VGS = 2.7 V
RDS(ON) = 0.45 W @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5 V.
low voltage applications as
a replacement for digital
transistors in load switching applications. Since bias
resistors are not required this one N-Channel FET can
replace several digital transistors with different bias
resistors like the IMHxA series.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors (IMHxA series)
with one DMOS FET.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
SO-8
SOIC-16
SOT-223
Mark: .303
4
3
2
1
5
6
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter
FDC6303N
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current
25
8
V
V
A
- Continuous
- Pulsed
0.68
2
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
0.7
TJ,TSTG
ESD
Operating and Storage Temperature Range
-55 to 150
6.0
°C
kV
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
RqJA
RqJC
© 1997 Fairchild Semiconductor Corporation
FDC6303N Rev.C
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 o C
25
V
mV /o C
µA
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
26
DBVDSS/DTJ
1
IDSS
VDS = 20 V, VGS = 0 V
TJ = 55°C
10
µA
Gate - Body Leakage Current
100
nA
IGSS
VGS = 8 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
mV /o C
V
Gate Threshold Voltage Temp.Coefficient
-2.6
DVGS(th)/DTJ
VGS(th)
Gate Threshold Voltage
0.65
0.5
0.8
1.5
0.45
0.8
Static Drain-Source On-Resistance
0.33
0.52
0.44
RDS(ON)
VGS = 4.5 V, ID = 0.5 A
W
TJ =125°C
VGS = 2.7 V, ID = 0.2 A
VGS = 2.7 V, VDS = 5 V
VDS = 5 V, ID= 0.5 A
0.6
On-State Drain Current
A
S
ID(ON)
gFS
Forward Transconductance
1.45
DYNAMIC CHARACTERISTICS
Input Capacitance
50
28
9
pF
pF
pF
Ciss
Coss
Crss
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
3
6
ns
ns
tD(on)
tr
tD(off)
tf
VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 W
8.5
18
30
25
2.3
17
ns
13
ns
1.64
0.38
0.45
nC
nC
nC
Qg
Qgs
Qgd
VDS = 5 V, ID = 0.5 A,
VGS = 4.5 V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
0.3
1.2
A
V
0.83
VSD
VGS = 0 V, IS = 0.5 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design. RqJA shown below for single device operation on FR-4 in still air.
a. 140OC/W on a 0.125 in2 pad of
2oz copper.
b. 180OC/W on a 0.005 in2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6303N Rev.C
Typical Electrical Characteristics
1.5
2
1.5
1
VGS = 4.5V
2.5
3.5
3.0
1.2
V
= 2.0V
GS
2.0
2.7
2.5
0.9
0.6
2.7
3.0
3.5
4.5
1.5
0.3
0
0.5
0
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
1.2
VDS , DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
2
1.6
ID= 0.5A
I
=0.5 A
= 4.5 V
D
1.6
V
1.4
1.2
1
GS
1.2
0.8
0.4
0
125°C
25°C
3.5
0.8
0.6
1
1.5
2
2.5
3
4
4.5
5
-50
-25
0
T
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
with Temperature.
1
1
T = -55°C
J
V
= 5.0V
25°C
DS
T = 125°C
V
= 0V
GS
J
0.8
0.6
0.4
0.2
0
125°C
0.1
0.01
25°C
-55°C
0.001
0.0001
0
0.2
0.4
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1
1.2
0
0.5
V
1
1.5
2
2.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6303N Rev.C
Typical Electrical And Thermal Characteristics
5
150
100
VDS = 5V
ID = 0.5A
10V
4
15V
C
iss
50
3
C
oss
20
10
5
2
1
0
f = 1 MHz
= 0V
V
GS
C
rss
0.1
0.5
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
4
3
2
1
5
SINGLE PULSE
1
RqJA =See note 1b
TA = 25°C
0.3
0.1
VGS = 4.5V
SINGLE PULSE
0.03
R qJA = See note 1b
TA = 25°C
0
0.01
0.01
0.1
0.1
1
10
100
300
0.2
0.5
1
2
5
10
20
40
SINGLE PULSE TIME (SEC)
V
, DRAI N-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1b
0.2
0.2
JA
q
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
0.01
T
- T = P * R
(t)
JA
J
A
q
Single Pulse
0.02
0.01
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6303N Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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