FDC5661N [ONSEMI]
MOSFET - N-Channel Logic Level, PowerTrench® , 60V, 4A, 60mΩ;
| 型号： | FDC5661N |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - N-Channel Logic Level, PowerTrench® , 60V, 4A, 60mΩ |
| 文件： | 总8页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
Logic Level, POWERTRENCH)
60 V, 4 A, 60 mW
FDC5661N
Features
www.onsemi.com
• R
• R
= 47 mW at V = 10 V, I = 4.3 A
GS D
DS(on)
DS(on)
= 60 mW at V = 4.5 V, I = 4 A
GS
D
S
D
• Typ Q
= 14.5 nC at V = 10 V
GS
g(TOT)
D
• Low Miller Charge
• UIS Capability
G
D
D
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Pin 1
Compliant
TSOT23−6
CASE 419BL
Applications
• DC/DC Converter
• Motor Drives
MARKING DIAGRAM
XXX MG
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
G
Rating
Drain to Source Voltage
Gate to Source Voltage
Symbol
Value
60
Unit
V
1
V
DSS
XXX = Specific Device Code
V
GS
20
V
M
= Date Code
Drain Current Continuous (V = 10 V)
I
D
4.3
20
A
G
= Pb−Free Package
GS
Pulsed
(Note: Microdot may be in either location)
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
E
81
mJ
W
AS
PIN CONNECTIONS
P
1.6
D
Operating and Storage Temperature
T , T
−55 to
°C
J
STG
1
2
3
6
5
4
+150
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
30
78
°C/W
°C/W
q
JC
JA
R
q
2
TO−263, 1in Copper Pad Area
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 81 mJ is 100% test at L = 14 mH, I = 3.4 A, Starting T = 25°C.
AS
AS
J
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2021 − Rev. 3
FDC5661N/D
FDC5661N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
B
I
I
= 250 mA, V = 0 V
60
−
−
−
−
−
−
V
VDSS
D
GS
I
V
DS
= 48 V, V = 0 V
1
mA
DSS
GS
T = 150°C
A
−
250
100
Gate to Source Leakage Current
ON CHARACTERISTICS
V
GS
=
20 V
−
nA
GSS
Gate to Source Threshold Voltage
Drain to Source On−Resistance
V
V
= V , I = 250 mA
1
−
−
−
2.0
38
46
69
3
V
GS(th)
GS
DS
D
R
V
= 10 V, I = 4.3 A
47
60
86
mW
DS(on)
GS
D
V
= 4.5 V, I = 4 A
D
GS
V
GS
= 10 V, I = 4.3 A
T = 150°C
J
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 0 V, V = 25 V,
−
−
−
−
−
−
−
763
68
−
−
pF
iss
GS
DS
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
oss
C
36
−
rss
R
f = 1 MHz
2.6
14.5
2.4
2.9
−
W
G
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
SWITCHING CHARACTERISTICS
Turn−On Time
Q
V
GS
= 0 to 10 V, V = 30 V, I = 4.3 A
19
−
nC
nC
nC
g(TOT)
DD
D
Q
Q
V
= 30 V, I = 4.3 A
DD D
gs
gd
−
t
on
V
= 10 V, V = 30 V,
−
−
−
−
−
−
−
7.2
1.6
19.3
3.1
−
17.6
−
ns
ns
ns
ns
ns
ns
GS
D
DD
I
= 4.3 A, R = 6 W,
GS
Turn−On Delay Time
Rise Time
t
d(on)
t
−
r
Turn−Off Delay Time
Fall Time
t
−
d(off)
t
−
f
Turn−Off Time
t
off
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Voltage
V
I
I
= 4.3 A
= 2.1 A
−
−
−
−
0.8
0.8
1.25
1.0
24
V
SD
SD
SD
Reverse Recovery Time
t
I
= 4.3 A, dI /dt = 100 A/ms
18.4
10.0
ns
rr
SD
SD
Reverse Recovery Charge
Q
13
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDC5661N
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
V
GS
= 10 V
V
= 4.5 V
GS
R
= 78 °C/W
q
JA
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
A,
AMBIENT TEMPERATURE (°C)
T
A,
AMBIENT TEMPERATURE (°C)
Figure 2. Maximum Continuous Drain Current
vs. Ambient Temperature
Figure 1. Normalized Power Dissipation vs. Ambient
Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
R
= 78°C/W
q
JA
0.01
10
−3
2
−2
−1
0
1
3
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
100
10
1
V
= 10 V
T
= 25°C
GS
C
FOR TEMPERATURES
ABOUT 25°C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 * TC
Ǹ
ƪ ƫ
125
SINGLE PULSE
R
= 78°C/W
q
JA
−3
2
−2
−1
0
1
3
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
FDC5661N
TYPICAL CHARACTERISTICS (continued)
100
10
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
10 ms
16
12
8
V
DD
= 5 V
100 ms
1
T = 150°C
J
1 ms
T = −55°C
J
10 ms
T = 25°C
J
0.1
0.01
OPERATION IN THIS
AREA MAY BE
100 ms
4
SINGLE PULSE
T = MAX RATED
T = 25°C
A
1 s
DC
J
LIMITED BY r
DS(on)
0
0
1
2
3
4
5
0.01
0.1
1
10
100300
V , GATE TO SOURCE VOLTAGE (V)
GS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 5. Forward Bias Safe Operating Area
120
90
20
16
12
8
V
= 10 V
I
D
= 4.3 A
PULSE DURATION = 80 ms
GS
V
= 6 V
DUTY CYCLE = 0.5% MAX
GS
PULSE DURATION = 80 ms
V
V
= 5 V
GS
DUTY CYCLE = 0.5% MAX
= 4.5 V
GS
V
GS
= 3.5 V
V
= 4 V
GS
T = 150°C
J
60
30
4
T = 25°C
J
V
= 3 V
GS
0
4
2
10
0
1
2
3
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On−Resistance
Variation vs. Gate to Source Voltage
1.2
2.0
1.8
1.6
I
V
= 250 mA
D
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
= V
GS
DS
1.1
1.0
0.9
0.8
1.4
1.2
1.0
0.8
0.6
0.7
0.6
I
V
= 4.3 A
D
= 10 V
GS
−80
−40
0
40
80
120
160
−40
0
40
80
120
−80
160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 10. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 9. Normalized Drain to Source On Resistance
vs. Junction Temperature
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4
FDC5661N
TYPICAL CHARACTERISTICS (continued)
2000
1000
1.15
1.10
I
D
= 250 mA
C
iss
1.05
1.00
C
oss
100
C
rss
0.95
0.90
f = 1 MHz
V
GS
= 0 V
10
0.1
−80
−40
0
40
80
120
160
1
10
50
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs. Drain
to Source Voltage
Figure 11. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
8
I
D
= 4.3 A
6
4
2
V
DD
= 20 V
V
= 30 V
DD
V
DD
= 40 V
0
3
0
6
9
12
15
Q
GATE CHARGE (nC)
G,
Figure 13. Gate Charge vs. Gate to Source
Voltage
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5
FDC5661N
ORDERING INFORMATION
Device Marking
†
Device
Package
TSOT23−6 (Pb−Free)
Shipping
.661N
FDC5661N
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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