FDB8443-F085 [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，80A，3.0mΩ;
| 型号： | FDB8443-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，80A，3.0mΩ 开关 晶体管 |
| 文件： | 总8页 (文件大小：543K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB8443-F085
®
N-Channel PowerTrench MOSFET
40V, 80A, 3.0mΩ
Features
Applications
Automotive Engine Control
Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 142nC at VGS = 10V
Low Miller Charge
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Low Qrr Body Diode
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
©2011 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDB8443-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
±20
V
V
VGS
Drain Current Continuous (TC < 146oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
80
ID
25
A
See Figure 4
531
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 1)
mJ
W
W/oC
oC
188
1.25
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.8
62
43
oC/W
oC/W
oC/W
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8443
FDB8443-F085
TO-263AB
330mm
24mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
1
V
V
DS = 32V,
μA
nA
VGS = 0V
TC = 150oC
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2
-
2.8
2.3
4
V
ID = 80A, VGS= 10V
3.0
mΩ
ID = 80A, VGS= 10V,
TJ = 175oC
-
4.2
5.5
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
9310
800
510
0.9
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Output Capacitance
-
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
RG
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
185
23
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
142
17.5
36
nC
nC
nC
nC
nC
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
Qgs2
Qgd
18.8
32
-
-
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2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics (VGS = 10V)
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
58
ns
ns
ns
ns
ns
ns
18.4
17.9
55
-
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
-
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
13.5
-
toff
Turn-Off Time
109
Drain-Source Diode Characteristics
ISD = 35A
ISD = 15A
-
-
-
-
0.8
0.8
42
1.25
1.0
55
VSD
Source to Drain Diode Voltage
V
trr
Reverse Recovery Time
ns
ISD = 35A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
48
62
nC
Notes:
o
1: Starting T = 25 C, L = 0.26mH, I = 64A.
J
AS
2: Pulse width = 100s.
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3
Typical Characteristics
200
160
120
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKGAE
VGS = 10V
40
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
10us
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
STARTING TJ = 25oC
LIMITED
BY PACKAGE
10
1
STARTING TJ = 150oC
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
10ms
DC
T
= MAX RATED
o
J
DS(on)
T
C
= 25 C
0.1
0.01
0.1
1
10
100
1000 5000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
160
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
160
V
DD = 5V
120
80
40
0
VGS = 5V
TJ = 175oC
VGS = 4.5V
120
TJ = 25oC
TJ = -55oC
80
40
VGS = 4V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
80
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
60
40
20
0
TJ = 25oC
TJ = 175oC
ID = 80A
VGS = 10V
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE( C)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 1mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
20000
ID = 35A
Ciss
10000
VDD = 15V
VDD = 20V
8
6
4
2
0
Coss
VDD = 25V
1000
Crss
f = 1MHz
VGS = 0V
100
50
0.1
1
10
0
20
40
60
80 100 120 140 160
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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