FDB390N15A_技术文档

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2015 年5 月

FDB390N15A

N 沟道PowerTrench^®MOSFET

150 V、27 A、39 mΩ

特性

•

说明

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench^®工艺

生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越

开关性能而定制的。

R_DS(on)= 33.5 mΩ (Typ.) @ V_GS= 10 V, I_D= 27 A

• 快速开关速度

• 低栅极电荷，Q_G=14.3 nC （典型值）

• 高性能沟道技术可实现极低的R_DS(on)

• 高功率和高电流处理能力

• 符合RoHS 标准

应用

• 消费电子设备

•

LED 电视

• 同步整流

• 不间断电源

• 微型太阳能逆变器

D

G

S

D²-PAK

S

MOSFET 最大额定值T_C= 25°C 除非另有说明。

FDB390N15A

符号

参数

单位

V_DSS

V_GSS

150

±20

±30

27

V

漏极－源极电压

栅极－源极电压

- DC

V

A

- AC

(f > 1 Hz)

- 连续（T_C= 25°C，硅限制）

- 连续（T_C= 100°C，硅限制）

- 脉冲

I_D

漏极电流

19

I_DM

108

78

A

mJ

漏极电流

（说明1）

（说明2）

（说明3）

E_AS

dv/dt

单脉冲雪崩能量

二极管恢复dv/dt 峰值

6.0

75

V/ns

W

(T_C= 25°C)

P_D

功耗

0.5

W/°C

°C

- 降低至25°C 以上

T_J, T_STG

T_L

工作和存储温度范围

-55 至+175

300

°C

用于焊接的最大引线温度，距离外壳1/8"，持续5 秒。

热性能

FDB390N15A

符号

参数

结至外壳热阻最大值

单位

R_θJC

2.0

62.5

40

结至环境热阻（最小尺寸的2 盎司焊盘）最大值。

结至环境热阻（1 in²2 盎司焊盘）最大值。

°C/W

R_θJA

www.fairchildsemi.com

1

FDB390N15A Rev. 1.8

封装标识与定购信息

器件编号

顶标

FDB390N15A

封装

D²-PAK

包装方法

卷带

卷尺寸

带宽

数量

330 mm

24 mm

FDB390N15A

800 个

电气特性^T_C= 25°C 除非另有说明。

符号

参数

测试条件

最小值典型值最大值

单位

关断特性

BV_DSS

I_D= 250 μA，V_GS= 0 V

150

-

V

漏极- 源极击穿电压

ΔBV_DSS

/ ΔT_J

击穿电压温度系数

I_D= 250 μA，温度为25°C

0.1

V/°C

V_DS= 120 V，V_GS= 0 V

V_DS= 120 V，T_C= 150°C

V_GS= ±20 V，V_DS= 0 V

-

1

I_DSS

I_GSS

μA

零栅极电压漏极电流

500

±100

nA

栅极- 体漏电流

导通特性

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS，I_D= 250 μA

V_GS= 10 V，I_D= 27 A

V_DS= 10 V，I_D= 27 A

2.0

-

4.0

39.0

-

V

mΩ

S

栅极阈值电压

-

33.5

33

漏极至源极静态导通电阻

正向跨导

动态特性

C_iss

-

965

96

1285

pF

nC

Ω

输入电容

V_DS= 75 V，V_GS= 0 V,

f = 1 MHz

C_oss

C_rss

130

输出电容

5.8

169

14.3

5.0

2.0

3.5

1.4

-

反向传输电容

C_oss(er)

Q_g(tot)

Q_gs

V_DS= 75 V，I_D= 27 A

-

能量相关输出电容

10 V 的栅极电荷总量

栅极- 源极栅极电荷

栅极平台电荷阈值

栅极- 漏极“ 米勒” 电荷

等效串联电阻(G-S)

-

18.6

V

_DS= 75 V，I_D= 27 A,

-

V_GS= 10 V

Q_gs2

Q_gd

-

（说明4）

ESR

f = 1 MHz

开关特性

t_d(on)

t_r

t_d(off)

t_f

-

14

10

20

5

38

30

50

20

ns

导通延迟时间

开通上升时间

关断延迟时间

关断下降时间

V_DD= 75 V，I_D= 27 A,

V

_GS= 10 V，R_G= 4.7 Ω

（说明4）

漏极- 源极二极管特性

I_S

-

27

108

1.25

-

A

漏极- 源极二极管最大正向连续电流

漏极- 源极二极管最大正向脉冲电流

漏极- 源极二极管正向电压

反向恢复时间

I_SM

V_SD

t_rr

V_GS= 0 V，I_SD= 27 A

-

V

63

131

ns

nC

V_GS= 0 V，I_SD= 27 A，V_DD= 75 V，

dI_F/dt = 100 A/μs

Q_rr

-

反向恢复电荷

注意：

1. 重复额定值：脉冲宽度受限于最大结温。

2. 开始T = 25°C，L = 3 mH，I = 7.2 A。

J

SD

3. I ≤ 27 A，di/dt ≤ 200 A/μs，V ≤ BV

，开始T = 25°C。

J

SD

DD

DSS

4. 本质上独立于工作温度的典型特性。

www.fairchildsemi.com

2

FDB390N15A Rev. 1.8

典型性能特征

图1. 导通区域特性

图2. 传输特性

200

V_GS= 15.0V

*Notes:

1. V_DS= 10V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

100

2. 250μs Pulse Test

10

25^oC

175^oC

-55^oC

*Notes:

1. 250μs Pulse Test

2. T_C= 25^oC

1

0.1

2

3

4

5

6

7

1

5

V_GS, Gate-Source Voltage[V]

V_DS, Drain-Source Voltage[V]

图3. 导通电阻变化与漏极电流和

栅极电压的关系

图4. 体二极管正向电压变化与源极电流

和温度的关系

80

200

100

60

V_GS= 10V

25^oC

175^oC

10

40

V_GS= 20V

*Notes:

1. V_GS= 0V

*Note: T_C= 25^oC

2. 250μs Pulse Test

20

1

0.4

0

20

40

60

80

100

0.6

0.8

1.0

1.2 1.3

I_D, Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

图5. 电容特性

图6. 栅极电荷特性

2000

10

1000

100

10

C_iss

V_DS= 30V

_DS= 75V

_DS= 120V

8

6

4

2

0

V

C_oss

*Note:

1. V_GS= 0V

2. f = 1MHz

C_rss

C

= C + C (C = shorted)

gs gd ds

iss

= C + C

ds

oss

rss

gd

= C

gd

*Note: I_D= 27A

12

1

0.1

1

10

100 200

0

4

8

16

V_DS, Drain-Source Voltage [V]

Q_g, Total Gate Charge [nC]

www.fairchildsemi.com

3

FDB390N15A Rev. 1.8

典型性能特性（接上页）

图7. 击穿电压变化与温度的关系

图8. 导通电阻变化与温度的关系

1.12

2.8

2.4

2.0

1.6

1.2

1.08

1.04

1.00

*Notes:

1. V_GS= 0V

0.96

0.92

*Notes:

1. V_GS= 10V

0.8

2. I_D= 250μA

2. I_D= 27A

0.4

-80

-40

0

40

80

120 160 200

-80

-40

0

40

80

120 160 200

T_J, Junction Temperature [^oC]

图9. 最大安全工作区

图10. 最大漏极电流与壳温的关系

300

30

V_GS= 10V

100

10μs

25

20

15

10

5

100μs

10

Operation in This Area

is Limited by R _DS(on)

1ms

10ms

DC

1

*Notes:

1. T_C= 25^oC

0.1

2. T_J= 175^oC

R_θJC= 2.0^oC/W

3. Single Pulse

0.01

0

25

50

75

100

125

150

175

1

10

100 200

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

图11. 输出电容(Eoss) 与漏源极电压的关系

图12. 非箝位电感开关能力

1.2

12

If R = 0

10

t^AV= (L)(IAS)/(1.3*RATED BVDSS-VDD)

If R = 0

1.0

0.8

0.6

0.4

0.2

0.0

t^AV= (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

STARTING T_J= 25^oC

STARTING T_J= 150^oC

1

0

30

60

90

120

150

0.01

0.1

1

10 20

V_DS, Drain to Source Voltage [V]

t_AV, TIME IN AVALANCHE (ms)

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4

FDB390N15A Rev. 1.8

典型性能特性（接上页）

图13. 瞬态热响应曲线

3

1

0.5

0.2

P_DM

0.1

t₁

0.05

t₂

0.1

0.02

0.01

*Notes:

1. Z_θJC(t) = 2.0^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

Single pulse

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

1

Rectangular Pulse Duration [sec]

t

₁，矩形脉冲持续时间[ 秒]

www.fairchildsemi.com

5

FDB390N15A Rev. 1.8

I = 常量

G

图14. 栅极电荷测试电路与波形

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

V

10V

GS

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

图15. 阻性开关测试电路与波形

V_GS

图16. 非箝位电感开关测试电路与波形

www.fairchildsemi.com

6

FDB390N15A Rev. 1.8

+

DUT

V_DS

_

I _SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

图17. 二极管恢复dv/dt 峰值测试电路与波形

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7

FDB390N15A Rev. 1.8

机械尺寸

2

图18. TO263 (D PAK) 模塑2 引脚表面贴装

封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /

或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司

产品保修的部分。

随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

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8

FDB390N15A Rev. 1.8

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

®

AccuPower™

F-PFS™

FRFET

OPTOPLANAR

®*

®

AttitudeEngine™

®

Global Power Resource^SM

GreenBridge™

Green FPS™

tm

Awinda

®

TinyBoost

TinyBuck

®

AX-CAP *

Power Supply WebDesigner™

®

BitSiC™

PowerTrench

TinyCalc™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

PowerXS™

®

TinyLogic

Programmable Active Droop™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

®

QFET

QS™

Quiet Series™

Current Transfer Logic™

Marking Small Speakers Sound Louder RapidConfigure™

TranSiC™

®

DEUXPEED

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

™

TriFault Detect™

TRUECURRENT *

Dual Cool™

®

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

μSerDes™

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ESBC™

MicroPak™

SmartMax™

MicroPak2™

MillerDrive™

MotionMax™

SMART START™

®

Solutions for Your Success™

UHC

®

SPM

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UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

Fairchild

®

MotionGrid

STEALTH™

Fairchild Semiconductor

FACT Quiet Series™

®

MTi

SuperFET

®

MTx

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FACT

FAST

®

MVN

®

mWSaver

FastvCore™

FETBench™

FPS™

®

OptoHiT™

OPTOLOGIC

SupreMOS

Xsens™

仙童™

®

SyncFET™

Sync-Lock™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Rev. I74

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FDB390N15A Rev. 1.8

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型号：	FDB390N15A
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，150V，27A，39mΩ 开关脉冲晶体管
文件：	总11页 (文件大小：878K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDB390N15A [ONSEMI]

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