FDB28N30TM [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，300V，28A，129mΩ，D2PAK;
| 型号： | FDB28N30TM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，300V，28A，129mΩ，D2PAK 开关 晶体管 |
| 文件： | 总9页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - UniFETt,
N-Channel
300 V, 28 A, 129 mW
FDB28N30TM
Description
UniFET t MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on−state resistance, and to provide
better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
www.onsemi.com
N−Channel
D
Features
G
• Typical R
= 108 mW at V = 10 V, I = 14 A
GS D
DS(on)
• Low Gate Charge (Typical Q = 39 nC)
g
• Low Reverse Transfer Capacitance C (Typical C = 35 pF)
rss
rss
S
• 100% Avalanche Tested
• This Device is Pb−Free and is RoHS Compliant
D
Applications
• Uninterruptible Power Supply
• AC−DC Power Supply
G
S
2
D PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FDB28N30
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDB28N30
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2020 − Rev. 1
FDB28N30TM/D
FDB28N30TM
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Ratings
Units
V
Drain to Source Voltage
Gate to Source Voltage
300
30
V
V
A
DSS
V
GSS
ID
Drain Current
−Continuous (T = 25°C)
28
C
−Continuous (T = 100°C)
19
C
IDM
A
Drain Current
−Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
112
E
Single Pulsed Avalanche Energy
Avalanche Current
588
28
mJ
A
AS
AR
I
E
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25
mJ
V/ns
W
dv/dt
4.5
P
D
Power Dissipation (T = 25°C)
250
2.0
C
−Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 seconds
W/°C
°C
TJ, T
−55 to +150
300
STG
T
L
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature
2. L = 1.5 mH, I = 28 A, V = 50 V, R = 25 W, starting T = 25°C
AS
DD
G
J
3. I ≤ 28 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
0.5
Units
°C/W
°C/W
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(1 in2 Pad of 2−oz Copper)
40
RθJA
Maximum Thermal Resistance, Junction to Ambient
(Minimum Pad of 2−oz Copper)
62.5
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
2
FDB28N30TM
FDB28N30
D PAK−3 (TO−263, 3−LEAD)
(Pb−Free)
800 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
2
FDB28N30TM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
OFF CHARACTERISTICS
BV Drain to Source Breakdown
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
I
= 250 mA, V = 0 V, T = 25°C
300
V
DSS
D
GS
J
Voltage
DBV
Breakdown Voltage
= 250 mA, referenced to 25°C
0.4
V/°C
mA
DSS
D
Temperature Coefficient
DT
J
I
Drain−to−Source Leakage
Current
V
V
V
= 300 V, V = 0 V
1
DSS
DS
DS
GS
GS
= 240 V, T = 125°C
10
100
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
V
= V , I = 250 mA
3.0
5.0
V
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source
On Resistance
= 10 V, I = 14 A
0.108
24.8
0.129
W
GS
D
g
FS
Forward Transconductance
V
= 40 V, I = 14 A
s
DS
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
1690
305
35
2250
405
50
pF
pF
pF
nC
nC
nC
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
rss
Q
V
DS
= 240 V, I = 28 A, V = 10 V
39
50
g
D
GS
(Note 4)
Q
gs
Q
gd
12
17
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
V
= 150 V, I = 28 A, V = 10V, R = 25 W
35
135
79
80
ns
ns
ns
ns
d(on)
DD
D
GS
G
(Note 4)
t
r
280
168
148
t
d(off)
t
f
69
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to
Source Diode Forward Current
28
112
1.4
A
A
V
S
I
Maximum Pulsed Drain to
Source Diode Forward Current
SM
V
SD
Drain to Source Diode Forward
Voltage
V
V
= 0 V, I = 28 A
SD
GS
t
Reverse Recovery Time
= 0 V, I = 28 A, dI /dt = 100 A/ms
279
2.7
ns
rr
GS
SD
F
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FDB28N30TM
TYPICAL PERFORMANCE CHARACTERISTICS
100
100
V
= 10.0 V
8.0 V
GS
7.0 V
6.5 V
6.0 V
10
150oC
5.5 V
−55oC
25oC
10
1
Notes:
Notes:
1
1. 250 ms Pulse Test
1. V = 20 V
DS
2. T = 255C
2. 250 ms Pulse Test
C
0.5
0.4
0.1
1
10
2
4
6
8
10
VDS,Drain−Source Voltage[V]
VGS,Gate−Source Voltage[V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.30
0.25
0.20
0.15
0.10
200
100
150oC
25oC
10
V
GS = 10V
VGS = 20V
Notes:
1. V = 0 V
GS
* Note : TJ = 25oC
50 75
2. 250 ms Pulse Test
1.5 2.0
VSD, Body Diode Forward Voltage [V]
1
0.0
0.5
1.0
0
25
ID, Drain Current [A]
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
4500
3000
1500
0
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
V
DS = 60 V
= C + C
ds gd
= C
gd
oss
rss
V
DS = 150 V
8
6
4
2
0
VDS = 240 V
Coss
Notes:
1. V = 0 V
GS
2. f = 1 MHz
Ciss
Crss
Note: ID = 28 A
32 40
10−1
100
101
VDS, Drain−Source Voltage [V]
0
8
16
24
30
Qg, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
FDB28N30TM
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
Notes:
Notes:
0.5
1. V = 0 V
GS
1. V = 10 V
GS
2. I = 250 mA
D
2. I = 14 A
D
0.0
−100
−100
−50
0
50
100
150
200
−50
0
50
100
150
200
o
o
TJ, Junction Temperature[ C]
TJ, Junction Temperature[ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
30
25
20
15
10
5
200
100
10ms
100ms
1ms
10
1
10ms
DC
Operation in This Area
is Limited by R DS(on)
Notes:
0.1
0.01
1. T = 255C
C
2. T = 1505C
J
3. Single Pulse
0
25
1
10
100
500
50
75
100
125
150
o
TC, Case Temperature[ C]
VDS, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
t2
0.01
0.01
Notes:
Single pulse
1. Z (t) = 0.55C/W Max.
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
1E−3
10−5
10−4
10−3
10−2
10−1
100
t1, Rectangular Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
www.onsemi.com
5
FDB28N30TM
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
toff
Figure 13. Resistive Switching Test Circuit & Waveform
VGS
Figure 14. Unclamped inductive Switching Test Circuit & Waveform
www.onsemi.com
6
FDB28N30TM
+
DUT
VDS
_
I SD
L
G
Same Type
as DUT
VDD
VGS
Sdv/dtcontrolled by R
G
SI controlled by pulse period
SD
Gate Pulse Width
VGS
D =
10V
Gate Pulse Period
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recoverydv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveform
UniFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明