FDB035N10A [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，214A，3.5mΩ;
| 型号： | FDB035N10A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，214A，3.5mΩ 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
MOSFET – N ṿᬣ,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
3.5 mꢀ @ 10 V
214 A*
*ꢀꢁꢂꢃꢄꢅ (ꢀꢁꢆꢇꢂꢈꢉꢊ)。ꢋꢌꢍЖꢄꢅ
ꢃ 120 A。
100 V, 214 A, 3.5 mW
D
FDB035N10A
G
S
ᛄꢀ
2
D PAK−3 (TO−263, 3−LEAD)
ꢀꢁN ꢂꢀꢁMOSFET ꢁꢂꢁonsemi ꢃꢃꢄꢁPOWERTRENCH ꢄ
ꢅꢆꢅ，ꢇꢆꢃꢃꢄꢅꢇꢈꢉꢊꢋꢈꢌꢍꢉꢎꢏꢊꢋꢌꢐꢑꢒ
ꢓꢍꢔꢕꢖꢎꢏꢗꢘꢄ。
CASE 418AJ
ꢁ
MARKING DIAGRAM
•ꢙR
= 3.0 mꢀ (ꢚꢛꢜ) @ V = 10 V, I = 75 A
GS D
DS(on)
•ꢙꢝꢐꢔꢕꢐꢌ
•ꢙꢎꢞꢟꢋꢑ，Q = 89 nC (ꢚꢛꢜ)
$Y&Z&3&K
FDB
035N10A
G
•ꢙꢒꢖꢎꢂꢀꢠꢡꢢꢣꢓꢟꢎꢄ R
DS(on)
•ꢙꢒꢤꢔꢥꢒꢋꢦꢧꢕꢎꢨ
•ꢙꢖꢩ RoHS ꢪꢫ
ꢂ✈
$Y
&Z
&3
&K
= Logo
•ꢙꢂꢬ ATX / ꢭꢮꢯ / ꢋꢰ PSU ꢄꢱꢲꢳꢦ
•ꢙꢋꢴꢑꢵꢋꢗ
•ꢙꢋꢶꢘꢷꢥꢸꢙꢹꢋꢚ
•ꢙꢺꢛꢻꢛꢎꢜꢼꢯ
= Assembly Plant Code
= 3−Digit Date Code Format
= 2−Digits Lot Run Traceability Code
FDB035N10A = Device Code
D
G
S
N ṿᬣ
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2022 − Rev. 3
FDB035N10ACN/D
FDB035N10A
MOSFET ᣠꢃ⍭ꢄꢅ(T = 25°C ꢎꢏ
׆
ꢐꢑꢒ) C
ꢆ ꢇꢈ
FDB035N10A
ꢉꢊ
V
V
V
ꢓꢔ－⁰ꢔꢄի
᧥ꢔ－⁰ꢔꢄի
ꢓꢔꢄꢅ
100
20
DSS
V
GSS
I
D
214*
151*
120
A
- ꢂꢃ (T = 25°C, ̕ꢍЖ)
C
- ꢂꢃ (T = 100°C, ̕ꢍЖ)
C
- ꢂꢃ (T = 25°C, ꢋꢌꢍЖ)
C
I
ꢓꢔꢄꢅ
- Β (ꢑꢒ 1)
856
A
mJ
DM
E
ԵΒ↺༉்Ჟ (ꢑꢒ 2)
lꢔ
ٱ
ቂ૭ dv/dt ໐Ȝ (ꢑꢒ 3) ѿ૧
658
AS
dv/dt
6.0
V/ns
W
P
333
(T = 25°C)
C
D
- ℝĮೃ 25°C Å⛺
2.22
−55 to +175
300
W/°C
°C
T , T
࿅
ļ٬
സʈꢊႆීࣔ
J
STG
T
L
✈ꢁ⋪ᖅŔꢆଇჵএꢊႆ，ҋ 1/8"，ᓡꢃ 5 Ң
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(֢ꢕᚡᝧ)
ୢꢄիᡕ᪗ꢆଇ⍭ൺȜጸꢄϷϚŔȜී
ࣔ
，ࡈ
Ö
்úᔿय。ୢᡕ᪗Ûĵ᪩{ꢍȜ，෦ៀẵƽᚑࡈ
Öѿ்，
்úොೄࡈ
Öᔿय，ᅑڭ
∰ሇ。 *ꢀꢁꢂꢃꢄꢅ (ꢀꢁꢆꢇꢂꢈꢉꢊ)。ꢋꢌꢍЖꢄꢅꢃ 120 A。
1. Ო૭⍭ൺȜ：Βꢖႆַꢍꢁꢆଇꢉꢊ。
2. ꢗꢘ T = 25°C, L = 1 mH, I = 36.3 A。
J
AS
3. I ≤ 75 A, di/dt ≤ 200 A/ꢁ s, V ≤ BV
, ꢗꢘ T = 25°C。
SD
DD
DSS
J
⋍ꢁ்
ꢆ R
ꢇꢈ
FDB035N10A
ꢉꢊ
°C/W
ꢉೃꢙꢚꢆଇȜ
0.45
62.5
40
ꢂ
JC
R
ꢉೃꢛꢙꢚ (ꢆꢜꢝꢞŔ 2 ꢟ
ט
⋪ꢠ) ꢆଇȜ。 ꢂ
JA
2
ꢉೃꢛꢙꢚ (1 in 2 ꢟ
ט
⋪ꢠ) ꢆଇȜ。 www.onsemi.cn
2
FDB035N10A
ꢀᷴꢁ(T = 25°C ꢎꢏ
׆
ꢐꢑꢒ) C
ꢆ ꢇꢈ
Ἣᚥꢋ
ᣠꢌꢅ ꢍꢎꢅ ᣠꢃꢅ
ꢉꢊ
ꢏꢐꢁ
BV
ꢓꢔ－⁰ꢔϛꢡꢄի
ϛꢡꢄիꢊႆꢢꢣ
I
I
= 250 ꢁ A, V = 0 V, T = 25°C
100
−
−
−
V
DSS
D
GS
C
ꢃ
B
V
= 250 ꢁ A, ꢊႆ֢ꢕ 25°C
0.07
V/°C
DSS
J
D
/
ꢃ
T
I
ꢤ᧥ꢔꢄիꢓꢔꢄꢅ
᧥ꢔ - ijꢓꢄꢅ
V
V
V
= 80 V, V = 0 V
−
−
−
−
−
−
1
ꢁ A
nA
V
DSS
DS
DS
GS
GS
= 80 V, T = 150°C
500
100
C
I
= 20 V, V = 0 V
DS
GSS
ꢑꢁ
V
GS(th)
᧥ꢔꢥȜꢄի
V
GS
V
GS
V
DS
= V , I = 250 ꢁ A
2.0
−
−
4.0
3.5
−
DS
D
R
ꢓꢔೃ⁰ꢔꢦꢧොꢨꢄꢚ
ꢩ
ױ
ꢪො = 10 V, I = 75 A
3.0
167
mꢀ
DS(on)
D
g
= 10 V, I = 75 A
−
S
FS
D
ꢒꢓꢁ
C
ꢫͅꢄꢬ
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
5485
2430
210
89
7295
3230
−
pF
pF
pF
nC
nC
nC
nC
iss
DS
GS
C
ꢫϚꢄꢬ
oss
C
֭
ױ
Āꢫꢄꢬ rss
Q
10 V Ŕ᧥ꢔꢄꢭꢮᲟ
᧥ꢔ - ⁰ꢔ᧥ꢔꢄꢭ
᧥ꢔꢯ
א
ꢄꢭꢥȜ ᧥ꢔ - ꢓꢔ “ ꢰҲ ” ꢄꢭ
V
DS
= 80 V, I = 75 A, V = 10 V
116
−
g(tot)
D
GS
(ꢑꢒ 4)
Q
24
gs
Q
8
−
gs2
Q
25
−
gd
ꢔꢏꢁ
t
ොꢨꢱꢲꢳꢴ
ꢗꢨ⛺ԧꢳꢴ
͓ꢵꢱꢲꢳꢴ
͓ꢵ⛻ℝꢳꢴ
ꢶꢷꢅꢸꢄꢚ (G-S)
V
= 50 V, I = 75 A, V = 10 V,
−
−
−
−
−
22
54
37
11
54
118
84
32
−
ns
ns
ns
ns
ꢀ
d(on)
DD
G
D
GS
R
= 4.7 ꢀ (ꢑꢒ 4)
t
r
t
d(off)
t
f
ESR
f = 1 MHz
1.2
⃯ᥡ -⁰ᥡꢕᥡ
ٱ
ꢁ I
ꢓꢔ - ⁰ꢔlꢔ
ٱ
ꢆଇꢩױ
ꢂꢃꢄꢅ ꢓꢔ - ⁰ꢔlꢔ
ٱ
ꢆଇꢩױ
Βꢄꢅ ꢓꢔ - ⁰ꢔlꢔ
ٱ
ꢩױ
ꢄի ֭
ױ
ቂ૭ꢳꢴ −
−
−
−
−
−
−
214*
856
1.25
−
A
A
S
I
SM
V
SD
V
V
= 0 V, I = 75 A
−
V
GS
SD
t
= 0 V, I = 75 A, V = 80 V,
72
129
ns
nC
rr
GS
F
SD
DD
dI /dt = 100 A/ꢁ s
Q
֭
ױ
ቂ૭ꢄꢭ −
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(֢ꢕᚡᝧ)
ꢎꢏ
׆
ꢐꢑꢒ，“ꢄꢹꢺሇ”ጸꢻꢄϷϚŔꢼꢽϷꢾꢿꣀÖ⛻Ŕڡ
ሇ்֢ꢣ。ୢई⛽
ꣀÖ⛻ꣁꣂ，ڡ
ሇ்
்⛾“ꢄꢹꢺሇ”ጸꢻ ꢄꢽϷሇ்֢ꢣ⛽⛰ೄ。
*ꢀꢁꢂꢃꢄꢅ (ꢀꢁꢆꢇꢂꢈꢉꢊ)。ꢋꢌꢍЖꢄꢅꢃ 120 A。
4. ꣃ꣄⛺ꣅꢁ࿅ļꢊႆŔ͘५ꢺሇ。
www.onsemi.cn
3
FDB035N10A
ꢍꢎꢁ்ꢖ
600
100
300
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
100
10
1
150°C
5.5 V
5.0 V
25°C
−55°C
10
2
*Notes:
1. 250 ꢁs Pulse Test
*Notes:
1. V = 10 V
DS
2. T = 25°C
2. 250 ꢁs Pulse Test
C
0.02
0.1
1
10
2
3
4
5
6
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate−Source Voltage (V)
ꢗ 1. ꢑꢘꢙꢁ
ꢗ 2. ꢚᩣꢁ
0.0040
500
100
0.0035
0.0030
0.0025
150°C
V
V
= 10 V
= 20 V
GS
25°C
10
1
GS
*Notes:
1. V = 0 V
GS
*Note: T = 25°C
2. 250 ꢁs Pulse Test
C
0
60
120
180
240
300
360
0.2
0.4
0.6
0.8
1.0
1.2
I , Drain Current (A)
D
V
, Body Diode Forward Voltage (V)
SD
ꢗ 3. ꢑꢀℋꢛꢜꢝ⃯ᥡꢀἡ
٬
᧥ᥡꢀի ꢗ 4. ijꢕᥡ
ٱ
ᵃױ
ꢀիꢛꢜꢝ⁰ᥡꢀἡ٬
ꢁႆ 10
10000
C
C
C
= C + C (C = shorted)
iss
gs
gd
ds
= C + C
oss
rss
ds
gd
V
DS
V
DS
V
DS
= 20 V
= 50 V
= 80 V
= C
8
6
4
2
0
gd
*Notes:
1. V = 0 V
2. f = 1 MHz
GS
C
iss
5000
100
C
oss
C
rss
*Note: I = 75 A
D
0.1
1
10
30
0
30
60
90
V
DS
, Drain−Source Voltage (V)
Q , Total Gate Charge (nC)
g
ꢗ 5. ꢀꢁ
ꢗ 6. ᧥ᥡꢀ็
www.onsemi.cn
4
FDB035N10A
ꢍꢎꢁ்ꢖ(continued)
2.1
1.8
1.5
1.2
0.9
1.10
1.05
1.00
0.95
0.90
*Notes:
1. V = 0 V
*Notes:
1. V = 10 V
GS
GS
2. I = 10 mA
2. I = 75 A
D
D
0.6
−100 −50
0
50
100
150
200
−100 −50
0
50
100
150
200
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
ꢗ 7. ϛՏꢀիꢛꢜꢝꢁႆ
ꢗ 8. ꢑꢀℋꢛꢜꢝꢁႆ
2000
1000
250
200
150
100
50
10 ꢁ s
100 ꢁ s
100
10
1
1 ms
10 ms
Operation in This Area
DC
is Limited by R
*Notes:
DS(on)
1. T = 25°C
C
2. T = 175°C
3. Single Pulse
J
Limited by package
0.1
0
0.1
1
10
100 300
25
50
75
100
125
150
175
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
ꢗ 9. ᣠꢃ൩͈࿅ļꢘ
ꢗ 10. ᣠꢃ⃯ᥡꢀἡꢝꢁႆ
100
10
1
If R = 0
= (L)(I ) / (1.3 * RATED BV
t
AV
− V
)
AS
DSS
DD
If R > 0
= (L / R)In[(I * R) / (1.3 * RATED BV
t
AV
− V ) + 1]
DD
AS
DSS
Starting T = 25°C
J
Starting T = 150°C
J
0.01
0.1
1
10
100
1000
t , Time in Avalanche (ms)
AV
ꢗ 11. ∮
٭
ꢊꢀꢞꢔꢏ்ꢟ www.onsemi.cn
5
FDB035N10A
ꢍꢎꢁ்ꢖ(continued)
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
Single pulse
t2
0.01
0.001
*Notes:
1. Z (t) = 0.45°C/W Max.
ꢂ
JC
2. Duty Factor, D = t / t
1
2
3. T − T = P
* Z (t)
ꢂ
JC
JM
C
DM
10−5
10−4
10−3
10−2
10−1
1
t , Βᓡꢃꢳꢴ (Ң)
1
ꢗ 12. ɼꢓ⋍ꢠꢂꢡএ
www.onsemi.cn
6
FDB035N10A
ꢗ 13. ᧥ᥡꢀ็ἫᚥꢀᢿꢝỂꢢ
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
ꢗ 14. ℋꢁꢔꢏἫᚥꢀᢿꢝỂꢢ
ꢗ 15. ∮
٭
ꢊꢀꢞꢔꢏἫᚥꢀᢿꢝỂꢢ www.onsemi.cn
7
FDB035N10A
+
DUT
VDS
_
ISD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
Gate Pulse Period
VGS
D =
10 V
(Driver)
IFM , Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
ꢗ 16. ꢕᥡ
ٱ
ꢣꢤdv/dt ꢥꢅἫᚥꢀᢿꢝỂꢢ ꢦ᎕᧧ᚖꢝꢄꢧꢨ
†
ꢩꢋ০ꢆ
⍆᧧
FDB035N10A
ꢦ᎕
ꢪ᎕ꢫẵ
ꢬꢭꢮ
ꢯꢰ
24 mm
ꢈᲟ
2
FDB035N10A
D −PAK
330 mm
800ꢆ
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.cn
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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