FDA20N50-F109 [ONSEMI]
N 沟道 UniFETTM MOSFET 500V,22A,230mΩ;型号: | FDA20N50-F109 |
厂家: | ONSEMI |
描述: | N 沟道 UniFETTM MOSFET 500V,22A,230mΩ |
文件: | 总9页 (文件大小:1779K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FDA20N50-F109
TM
N-Channel UniFET MOSFET
500 V, 20 A, 230 mΩ
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Features
•
•
•
•
•
RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 10 A
Low Gate Charge (Typ. 45.6 nC)
Low Crss (Typ. 27 pF)
100% Avalanche Tested
Improved dv/dt Capability
Applications
•
•
•
PDP TV
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
TO-3PN
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
FDA20N50-F109
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
22
13.2
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
A
88
30
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
1110
22
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
28.0
20
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
280
2.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
FDA20N50-F109
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
0.44
40
Publication Order Number:
FDA20N50-F109/D
©2007 Semiconductor Components Industries, LLC.
September-2017 Rev. 3
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDA20N50
FDA20N50-F109
TO-3PN
Tube
N/A
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Conditions
Min
Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
500
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25°C
0.50
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
DS = 400V, TC = 125°C
--
--
--
--
1
10
μA
μA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
3.0
--
--
5.0
0.23
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 11A
0.20
24.6
gFS
Forward Transconductance
VDS = 40V, ID = 11A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2400
355
27
3120
465
--
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 20A
RG = 25Ω
--
--
--
95
200
760
210
220
59.5
--
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
375
100
105
45.6
14.8
21.6
ns
(Note 4)
--
--
--
--
ns
Qg
VDS = 400V, ID = 20A
nC
nC
nC
V
GS = 10V
Qgs
Qgd
--
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
20
80
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 22A
--
V
VGS = 0V, IS = 20A
507
7.20
ns
μC
dIF/dt =100A/μs
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, I = 22A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 22A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
25oC
101
Bottom : 5.5 V
101
-55oC
100
* Notes :
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
1. VDS = 40V
2. 250μs Pulse Test
100
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.8
0.6
VGS = 10V
101
0.4
150oC
25oC
VGS = 20V
0.2
*Notes :
1. VGS = 0V
* Note : TJ = 25oC
2. 250μs Pulse Test
0.0
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
15
30
45
60
75
90
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
6000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
VDS = 250V
VDS = 400V
5000
4000
3000
2000
1000
0
Crss = Cgd
Coss
C
iss
6
4
*
Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
2
* Note : ID = 20A
0
10-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
0.5
2. ID = 250 μA
1. VGS = 10 V
2. ID = 11 A
-50
200
0.8
-100
0.0
-100
-50
0
50
100
150
200
0
50
100
150
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
102
101
10 μs
100 μs
1 ms
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
100
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
10-1
0
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1 0 0
1 0 -1
1 0 -2
D = 0 .5
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
0 .0 1
t2
*
N o te s
1 . Z θ J C (t)
2 . D u ty F a c to r,
3 . T JM T C P D
:
=
0 .4 4 o C /W M a x .
t1 /t2
Z θ J C (t)
D
=
s in g le p u ls e
-
=
*
M
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
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4
Figure 12. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
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verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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