FCPF260N65FL1 [ONSEMI]

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，15 A，260 mΩ，TO-220F;


型号：	FCPF260N65FL1
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，15 A，260 mΩ，TO-220F
文件：	总11页 (文件大小：1004K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Is Now Part of

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2015 年3 月

FCPF260N65FL1

N- 沟道SuperFET II FRFET MOSFET

650 V, 15 A, 260 mΩ

特性

•

描述

SuperFET^®II MOSFET 是飞兆利用电荷平衡技术实现出色的低

导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET

系列产品。这项技术专用于最小化导通损耗并提供卓越的开关性

能、dv/dt 额定值和更高雪崩能量。因此，SuperFET MOSFET 非

常适合开关电源应用，如功率因数校正 (PFC)、服务器 / 电信电

源、平板电视电源、ATX 电源及工业电源应用。SuperFET II

FRFET^®MOSFET 优化体二极管的反向恢复性能可去除额外元

件，提高系统可靠性。

700 V @T_J= 150°C

•

_DS(on)= 220 mΩ ( 典型值)

• 超低栅极电荷（典型值Q_g= 46 nC)

• 低有效输出电容（典型值C_oss(eff.)= 223 pF)

•

100% 经过雪崩测试

• 符合RoHS 标准

应用

•

LCD / LED / PDP TV

• 通信/ 服务器电源

• AC-DC 电源

• 太阳能变频器

TO-220F

最大绝对额定值^T_C= 25°C 除非另有说明。

FCPF260N65FL1

符号

参数

单位

V_DSS

V_GSS

650

±20

±30

漏极－源极电压

栅极－源极电压

- DC

- AC

(f > 1 Hz)

- 连续(TC = 25°C)

- 连续 (T_C= 100°C)

- 脉冲

I_D

漏极电流

9.5

I_DM

漏极电流

（注1）

（注2）

（注1）

E_AS

IAR

EAR

293

单脉冲雪崩能量

雪崩电流

1.56

100

重复雪崩能量

MOSFET dv/dt

dv/dt

P_D

V/ns

二极管恢复dv/dt 峰值

（注3）

(T_C= 25°C)

W/°C

°C

功耗

0.29

- 高于25°C 的功耗系数

T_J, T_STG

T_L

工作和存储温度范围

-55 至+150

300

°C

用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒

热性能

FCPF260N65FL1

符号

R_θJC

参数

结至外壳热阻最大值

单位

3.5

°C/W

R_θJA

62.5

结至环境热阻最大值

www.fairchildsemi.com

FCPF260N65FL1 Rev. C0

封装标识与定购信息

器件编号

顶标

FCPF260N65F

封装

包装方法

塑料管

卷尺寸

不适用

带宽

数量

FCPF260N65FL1

TO-220F

不适用

50 个

电气特性^T_C=25°C 除非另有说明。

符号

关断特性

BV_DSS

参数

测试条件

最小值典型值最大值

单位

V_GS= 0 V, I_D= 1 mA, T_J= 25°C

V_GS= 0 V, I_D= 1 mA, T_J= 150°C

650

700

漏极－源极击穿电压

ΔBV_DSS

/ ΔT_J

击穿电压温度系数

I_D=1 mA，参考25°C 数值

0.72

V/°C

VDS = 650 V, VGS = 0 V

I_DSS

I_GSS

μΑ

零栅极电压漏极电流

栅极－体漏电流

VDS = 520 V, VGS = 0 V,

TC = 125 °C

V_GS= ±20 V, V_DS= 0 V

±100

导通特性

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= 1.5 mA

V_GS= 10 V, I_D= 7.5 A

V_DS= 20 V, I_D= 7.5 A

260

mΩ

栅极阈值电压

220

14.2

漏极至源极静态导通电阻

正向跨导

动态特性

C_iss

1760

2340

输入电容

V_DS= 100 V, V_GS= 0 V,

f = 1 MHz

C_oss

输出电容

C_rss

1.0

反向传输电容

输出电容

C_oss

V_DS= 380 V, V_GS= 0 V, f = 1 MHz

C_oss(eff.)

Q_g(tot)

Q_gs

V_DS= 0 V 至400 V, V_GS= 0 V

223

有效输出电容

10 V 的栅极电荷总量

栅极－源极栅极电荷

栅极－漏极“ 米勒” 电荷

等效串联电阻

_DS= 380 V, I_D= 7.5 A,

9.6

VGS = 10 V

（注4）

Q_gd

ESR

f = 1 MHz

0.52

开关特性

t_d(on)

t_r

t_d(off)

t_f

21.7

10.5

导通延迟时间

导通上升时间

关断延迟时间

关断下降时间

_DD= 380 V, I_D= 7.5 A,

VGS = 10 V, R_g= 4.7 Ω

118

5.8

（注4）

漏极－源极二极管特性

I_S

1.2

漏极－源极二极管最大正向连续电流

I_SM

V_SD

t_rr

漏极－源极二极管最大正向脉冲电流

漏极－源极二极管正向电压

反向恢复时间

V_GS= 0 V, I_SD= 7.5 A

450

V_GS= 0 V, I_SD= 7.5 A,

dIF/dt = 100 A/μs

Q_rr

注：

反向恢复电荷

1. 重复额定值：脉冲宽度受限于最大结温。

2. I = 3 A, R = 25 Ω, 开始于T = 25°C

3. I ≤ 7.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, 开始于T = 25°C

4. 典型特性本质上独立于工作温度。

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

典型性能特征

图1. 导通区域特性

图2. 传输特性

_GS= 15.0V

10.0V

*Notes:

1. V_DS= 20V

8.0V

7.0V

6.5V

6.0V

5.5V

2. 250μs Pulse Test

150^oC

25^oC

-55^oC

*Notes:

1. 250μs Pulse Test

2. T_C= 25^oC

0.1

V_DS, Drain-Source Voltage[V]

V_GS, Gate-Source Voltage[V]

图3. 导通电阻变化与漏极电流和栅极电压的关系

图4. 体二极管正向电压变化与源极电流和温度的关系

0.5

100

*Note: T_C= 25^oC

*Notes:

1. V_GS= 0V

2. 250μs Pulse Test

0.4

150^oC

0.3

V_GS= 10V

0.1

25^oC

V_GS= 20V

0.2

0.1

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

I_D, Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

图5. 电容特性

图6. 栅极电荷特性

10000

1000

100

*Note: I_D= 7.5A

C_iss

V_DS= 130V

V_DS= 325V

V_DS= 520V

C_oss

*Note:

1. V_GS= 0V

C_rss

2. f = 1MHz

= C + C (C = shorted)

gs gd ds

iss

= C + C

ds gd

oss

rss

= C

0.1

100

660

Q_g, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

典型性能特征（接上页）

图7. 击穿电压变化与温度的关系

图8. 导通电阻变化与温度的关系

2.4

2.0

1.6

1.2

0.8

0.4

1.2

1.1

1.0

0.9

0.8

*Notes:

1. V_GS= 10V

*Notes:

1. V_GS= 0V

2. I_D= 7.5A

2. I_D= 1mA

-75 -50 -25

25 50 75 100 125 150

-75 -50 -25

25 50 75 100 125 150

T_J, Junction Temperature [^oC]

图9. 最大安全工作区

图10. 最大漏极电流与壳温的关系

100

10μs

R_θJC= 3.5^oC/W

100μs

1ms

10ms

Operation in This Area

is Limited by R _DS(on)

*Notes:

1. T_C= 25^oC

2. T_J= 150^oC

0.1

0.01

3. Single Pulse

100

125

150

0.1

100

1000

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

图11. Eoss 与漏源极电压的关系

130

260

390

520

650

V_DS, Drain to Source Voltage [V]

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

典型性能特征（接上页）

图12. 瞬态热响应曲线

0.5

0.1

0.2

0.1

0.05

P_DM

0.02

0.01

t₁

t₂

*Notes:

0.01

0.001

1. Z_θJC(t) = 3.5^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

Single pulse

10^-5

10^-4

10^-3

t₁, Rectangular Pulse Duration [sec]

10^-2

10^-1

100

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

I = 常量

图13. 栅极电荷测试电路与波形

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

图14. 阻性开关测试电路与波形

V_GS

图15. 非箝位电感开关测试电路与波形

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

图16. 二极管恢复dv/dt 峰值测试电路与波形

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

机械尺寸

图17. TO220 模塑，3 引脚Full Pack，EIAJ SC91，Takcheong

封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /

或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其中涉及飞兆半

导体产品保修的部分。

随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3

FCPF260N65FL1 Rev. C0

www.fairchildsemi.com

商标

以下注册及未注册的商标或服务标志均为飞兆半导体公司和/ 或其全球子公司所有，且并非所有该类商标的完整目录。

AccuPower™

Awinda^®

F-PFS™

®*

FRFET^®

AX-CAP^®*

Global Power Resource^SM

GreenBridge™

Green FPS™

Green FPS™ e-Series™

Gmax™

PowerTrench^®

PowerXS™

TinyBoost^®

TinyBuck^®

TinyCalc™

TinyLogic^®

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED^®

Dual Cool™

EcoSPARK^®

EfficentMax™

ESBC™

Programmable Active Droop™

QFET^®

QS™

TINYOPTO™

TinyPower™

TinyPWM™

GTO™

Quiet Series™

RapidConfigure™

™

IntelliMAX™

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

TinyWire™

TranSiC™

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

SMART START™

Solutions for Your Success™

SPM^®

TriFault Detect™

TRUECURRENT^®*

μSerDes™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

MotionGrid^®

MTi^®

STEALTH™

UHC^®

Fairchild^®

SuperFET^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS^®

SyncFET™

Sync-Lock™

MTx^®

FAST^®

FastvCore™

FETBench™

FPS™

MVN^®

mWSaver^®

OptoHiT™

Xsens™

仙童™

* 商标为System General Corporation 所有，授权飞兆半导体公司使用。

声明

飞兆半导体公司为提高产品的可靠性、功能或设计，保留对其作出变动的权利，恕不另行通知。访问我们的在线网页 HTTP://WWW.FAIRCHILDSEMI.COM，可

以获取最新的产品数据和产品信息。对于本文描述的任何产品和电路在应用中所出现的问题，飞兆半导体公司不承担任何责任；不转让其专利权下的任何许可

证，也不转让其他权利。本文中的各项规格说明特定用于本文所述之产品，其保修条款仅用于本文相关产品，不适用于飞兆半导体全球销售的其他产品。

使用寿命条款

若无飞兆半导体公司正式的书面授权，其产品不可作为生命支持设备或系统中的关键器件。

具体如下：

1. 生命支持器件或系统是指如下的设备或系统：(a) 用于外科植入人体，或

(b) 支持或维持生命，以及 (c) 即使依照标示中的使用说明进行正确操

作，但若操作失败，仍将对使用者造成严重的伤害。

2. 关键器件是指生命支持设备或系统中，由于该器件的失效会导致整个生

命支持设备或系统的失效，或是影响其安全性及使用效果。

防伪条款

飞兆半导体防伪条款。飞兆半导体防伪条款也在我们的外部网站www.fairchildsemi.com“ 销售支持” 部分清楚列明。

半导体产品的仿造行为在行业内已日趋益严重。所有半导体产品制造商都正遭遇其零部件被仿造的问题。无意间购买到假冒零部件的客户遇到很多问题，如品

牌声誉损失、性能不合格、应用失败、生产成本增加和制造延误增多等。飞兆半导体正在采取强有力的措施，保护自己并防止客户购买到仿造零部件。飞兆半

导体强烈鼓励客户直接从飞兆半导体或其网页所列国家/ 地区的授权分销商处购买飞兆半导体的产品。客户直接从飞兆半导体公司或从其授权分销商购买到的

产品都是正品。这些产品具有全面的可追溯性，符合飞兆半导体的质量标准，便于操作和存储，并提供飞兆半导体完整、最新的技术和产品信息的获取途径。

飞兆半导体公司和其授权分销商将做好所有保修工作，并妥善处理可能出现的任何保修问题。对于从非授权分销商购买的零部件，飞兆半导体将不提供任何保

修或其他援助。飞兆半导体致力于打击这一全球性问题，并鼓励客户尽力通过直接购买或从授权分销商购买的方式阻止产品仿造行为。

产品状态定义

术语定义

数据表标识

先期信息

产品状态

定义

初级阶段/ 设计阶段

数据表包含了产品开发的设计规格。具体参数可进行改动，且无需做出相应通知。

该数据表包含了初始数据，补充数据随后发布。飞兆半导体保留有在任何时间为改进设计

而做出更改，且无需另行通知的权力。

初级

样品

该数据表包含了最终的技术规范。飞兆半导体保留在任何时间为改进设计而做出更改，且

无需另行通知的权力。

无需标识

废弃

量产

停产

数据手册包含飞兆半导体已停产产品的规格数据。该数据表信息仅供参考。

Rev. I71

www.fairchildsemi.com

FCPF260N65FL1 Rev. C0

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

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