FCPF190N65S3L1 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，14 A，190 mΩ，TO-220F;
| 型号： | FCPF190N65S3L1 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，14 A，190 mΩ，TO-220F |
| 文件： | 总10页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCPF190N65S3L1
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 14 A, 190 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
190 mW @ 10 V
14 A
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
D
Features
• 700 V @ T = 150°C
J
G
• Typ. R
= 165 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 30 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 277 pF)
oss(eff.)
S
POWER MOSFET
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
G
D
S
TO−220F
CASE 340BF
• Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCPF
190N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCPF190N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 4
FCPF190N65S3L1/D
FCPF190N65S3L1
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
14*
A
C
− Continuous (T = 100°C)
9*
C
I
Drain Current
− Pulsed (Note 1)
35*
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
76
AS
AS
I
2.5
E
0.33
100
20
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
33
W
W/°C
°C
D
− Derate Above 25°C
0.27
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 2.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 7 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.76
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FCPF190N65S3L1
FCPF190N65S3
TO−220F
Tube
N/A
50 Units
www.onsemi.com
2
FCPF190N65S3L1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.6
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
1
mA
DSS
GS
= 520 V, T = 125_C
0.89
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.36 mA
2.5
4.5
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 7 A
165
10
190
D
g
FS
= 20 V, I = 7 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1225
30
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
277
43
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 7 A, V = 10 V
30
g(tot)
D
GS
(Note 4)
Q
7.4
13
gs
Q
gd
ESR
f = 1 MHz
7
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 7 A, V = 10 V,
19
23
52
15
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
14
35
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 7 A
1.2
V
SD
GS
SD
t
= 400 V, I = 7 A,
256
3.5
ns
mC
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCPF190N65S3L1
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
50
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
= 20 V
DS
250 ms Pulse Test
10
150°C
25°C
−55°C
1
250 ms Pulse Test
= 25°C
T
C
0.1
1
0.1
1
10 20
, Drain−Source Voltage (V)
3
4
V
5
6
7
8
9
V
DS
, Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.2
0.0
100
10
V
= 0 V
T
C
= 25°C
GS
250 ms Pulse Test
150°C
1
V
GS
= 10 V
25°C
−55°C
V
GS
= 20 V
0.1
0.01
0.001
0.0
0.5
1.0
1.5
0
10
20
30
40
V
, Body Diode Forward Voltage (V)
I , Drain Current (A)
D
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
8
100000
10000
1000
100
I
D
= 7 A
C
V
DS
= 130 V
iss
V
DS
= 400 V
6
C
oss
4
10
V
GS
= 0 V
f = 1 MHz
C
2
rss
C
C
C
= C + C (C = shorted)
iss
gs gd ds
1
= C + C
gd
oss
rss
ds
= C
gd
0.1
0
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
FCPF190N65S3L1
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 7 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−50
50
100
150
0
−50
0
50
100
150
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
15
10
5
100
10
1
30 ms
100 ms
1 ms
10 ms
DC
Operation in this Area
is Limited by R
DS(on)
0.1
T
C
= 25°C
T = 150°C
J
Single Pulse
0
0.01
150
1
10
100
1000
25
50
75
100
125
T , Case Temperature (5C)
V
, Drain−Source Voltage (V)
C
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCPF190N65S3L1
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
0.01
t
1
t
2
Z
q
(t) = r(t) x R
q
JC
JC
R
= 3.76°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
SINGLE PULSE
10−4
Duty Cycle, D = t / t
1 2
0.001
10−5
10−3
10−2
10−1
100
101
102
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
FCPF190N65S3L1
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCPF190N65S3L1
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK 3LD
CASE 340BF
ISSUE O
DATE 31 AUG 2016
10.30
A
9.80
2.90
2.50
3.40
3.00
6.60
6.20
3.00
2.60
1 X 45°
19.00
B
15.70
17.70
B
15.00
3.30
2.70
B
3
1
2.70
2.30
2.14
1.20
0.90
(2X)
10.70
10.30
0.60
0.40
B
0.90
(3X)
0.50
1.20
M
A
1.00
0.50
NOTES:
2.74
(2X)
2.34
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.60
4.30
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13839G
TO−220 FULLPAK 3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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