FCP7N60 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，TO-220;
| 型号： | FCP7N60 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，7 A，600 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2014 年1 月
FCP7N60 / FCPF7N60
®
N 沟道SuperFET MOSFET
600 V, 7 A, 600 m
特性
•
说明
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务
器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。
650 V @ TJ = 150°C
• 典型值RDS(on) = 530 m
• 超低栅极电荷（典型值Qg = 23 nC）
• 低有效输出电容（典型值Coss(eff.)= 60 pF）
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
•
LCD/LED/PDP 电视
• 太阳能逆变器
•
AC-DC 电源
D
D
G
G
D
S
G
G
D
TO-220F
S
TO-220
TO-220F
S
Y 形
S
绝对最大额定值TC = 25°C 除非另有说明。
FCPF7N60 /
FCPF7N60YDTU
FCP7N60
符号
VDSS
参数
单位
600
V
漏极－源极电压
漏极电流
ID
- 连续(TC = 25°C)
- 连续(TC = 100°C)
7
4.4
7*
4.4*
A
A
（注1）
IDM
- 脉冲
A
漏极电流
21
21*
VGSS
EAS
IAR
30
230
7
V
mJ
A
栅极至源极电压
单脉冲雪崩能量
雪崩电流
（注2）
（注1）
（注1）
（注3）
EAR
dv/dt
PD
8.3
4.5
mJ
V/ns
重复雪崩能量
二极管恢复dv/dt 峰值
(TC = 25°C)
83
31
W
功耗
- 超过25°C 时降额
0.67
0.25
W/°C
T
J, TSTG
-55 至+150
°C
°C
工作和存储温度范围
TL
300
用于焊接的最高引脚温度，距离外壳1/8”，持续5 秒
*
漏极电流受限于最大结温
热性能
FCPF7N60 /
FCPF7N60YDTU
FCP7N60
符号
参数
单位
RJC
RJA
1.5
4.0
结至外壳热阻最大值
结至环境热阻最大值
°C/W
62.5
62.5
www.fairchildsemi.com
© 2005 飞兆半导体公司
1
FCP7N60 / FCPF7N60 Rev. C1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
不适用
带宽
数量
FCP7N60
FCP7N60
TO220
不适用
不适用
50 单元
50 单元
FCPF7N60
FCPF7N60
TO220F
TO-220F
（Y 形）
塑料管
FCPF7N60YDTU
FCPF7N60
塑料管
不适用
不适用
50 单元
否则电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
工作条件
最小值 典型值 最大值 单位
VGS = 0 V, ID = 250 A, TJ = 25°C
VGS = 0 V, ID = 250 A, TJ = 150°C
600
--
--
--
--
V
V
漏极－源极击穿电压
650
BVDSS
/ TJ
击穿电压温度系数
I
D = 250 A，参考25°C
--
--
0.6
--
--
V/°C
V
BVDS
IDSS
VGS = 0 V, ID = 7 A
700
漏源极雪崩击穿电压
零栅极电压漏极电流
VDS = 600 V, VGS = 0 V
V
--
--
--
--
1
10
A
A
DS = 480 V, TC = 125°C
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
栅极- 体漏电流，正向
栅极- 体漏电流，反向
-100
导通特性
VGS(th)
VDS = VGS, ID = 250 A
3.0
--
--
0.53
6
5.0
0.6
--
V
S
栅极阈值电压
RDS(on)
漏极－源极
导通电阻
V
GS = 10 V, ID = 3.5 A
gFS
VDS = 40 V, ID = 3.5 A
--
正向跨导
动态特性
Ciss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
--
--
--
--
710
380
34
920
500
--
pF
pF
pF
pF
pF
输入电容
Coss
输出电容
Crss
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1 MHz
22
29
--
Coss(eff.)
VDS = 0 V 至400 V, VGS = 0 V
60
有效输出电容
开关特性
td(on)
tr
VDD = 300 V, ID = 7 A,
--
--
--
--
--
--
--
35
55
80
120
160
75
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
总栅极电荷
V
GS = 10 V, RG = 25
td(off)
tf
75
ns
（说明4）
（说明4）
32
ns
Qg
VDS = 480 V, ID = 7 A,
GS = 10 V
23
30
nC
nC
nC
V
Qgs
Qgd
4.2
11.5
5.5
--
栅极至源极电荷
栅极至漏极电荷
漏极- 源极二极管特性和最大额定值
IS
--
--
--
--
--
--
--
7
21
1.4
--
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, IS = 7 A
--
V
VGS = 0 V, IS = 7 A,
dIF/dt =100 A/s
360
4.5
ns
C
Qrr
--
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 3.5 A，V = 50 V，R = 25 ，启动T = 25°C。
AS
DD
G
J
3. I 7 A，di/dt 200 A/s，V BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
© 2005 飞兆半导体公司
2
FCP7N60 / FCPF7N60 Rev. C1
典型性能特征
图1. 导通区域特性
图2. 传输特性
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
10-1
Bottom : 5.5 V
150C
25C
100
-55C
Notes :
1. 250s Pulse Test
2. TC = 25C
Note
1. VDS = 40V
2. 250s Pulse Test
10-1
2
10-1
100
101
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源极电流和温度的
关系
2.0
1.8
1.6
1.4
101
VGS = 10V
1.2
1.0
0.8
0.6
100
150C
25C
VGS = 20V
0.4
0.2
0.0
Notes :
1. VGS = 0V
Note : TJ = 25C
2. 250s Pulse Test
10-1
0.2
0
5
10
15
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
图5. 电容特性
图6. 栅极电荷
3000
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
VDS = 100V
VDS = 250V
C
VDS = 400V
2000
1000
Coss
6
Notes :
1. VGS = 0 V
Ciss
4
2. f = 1 MHz
Crss
2
Note : ID = 7A
20
0
0
10-1
100
101
0
5
10
15
25
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
© 2005 飞兆半导体公司
3
FCP7N60 / FCPF7N60 Rev. C1
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
Notes :
1. VGS = 0 V
Notes :
1. VGS = 10 V
2. ID = 250A
2. ID = 3.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
图9-1. 用于FCP7N60 最大安全工作区
图9-2. 用于FCPF7N60 最大安全工作区
102
102
Operation in This Area
Operation in This Area
is Limited by R DS(on)
is Limited by R DS(on)
100 us
1 ms
10 ms
101
101
100
100 us
1 ms
10 ms
100 ms
DC
DC
100
10-1
10-2
Notes :
1. TC = 25C
Notes :
1. TC = 25C
10-1
2. TJ = 150C
2. TJ = 150C
3. Single Pulse
3. Single Pulse
10-2
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图10. 最大漏极电流与壳体温度
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [? ]
www.fairchildsemi.com
© 2005 飞兆半导体公司
4
FCP7N60 / FCPF7N60 Rev. C1
典型性能特征（接上页）
图11-1. FCP7N60 的瞬态热响应曲线
100
10-1
10-2
D =0.5
0.2
N otes
1. ZJC(t)
2. D uty Factor, D =t1/t2
3. TJM - TC PDM JC(t)
:
=
1.5C /W M ax.
0.1
0.05
0.02
=
* Z
0.01
PDM
t1
single pulse
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse D uration [sec]
图11-2. FCPF7N60 的瞬态热响应曲线
D=0.5
100
10-1
10-2
0.2
0.1
N otes
:
1. Z JC(t) 4.0C /W M ax.
0.05
2. D uty Factor, D =t1/t2
3. TJM - TC
= PDM * ZJC(t)
0.02
0.01
PDM
single pulse
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse D uration [sec]
www.fairchildsemi.com
© 2005 飞兆半导体公司
5
FCP7N60 / FCPF7N60 Rev. C1
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= ??
G
Charge
图12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图13. 阻性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
L IAS
EAS
=
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
图14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
© 2005 飞兆半导体公司
FCP7N60 / FCPF7N60 Rev. C1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图15. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
© 2005 飞兆半导体公司
FCP7N60 / FCPF7N60 Rev. C1
7
10.36
9.96
2.66
2.42
A
B
B
3.28
3.08
3.40
3.20
7.00
0.70
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
R0.30
2.96
2.56
3
1
R0.30
1.47
1.24
10.45
9.45
10.00
9.00
B
B
2.14
0.90
0.70
M
0.50
A
0.60
0.45
B
B
4.00 MIN
2.54
2.54
6.00
4.00
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220Q03REV2
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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