FCP400N80Z [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，800 V，14 A，400 mΩ，TO-220;
| 型号： | FCP400N80Z |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，800 V，14 A，400 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：909K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2015
FCP400N80Z
N-Channel SuperFET II MOSFET
800 V, 14 A, 400 m
®
Features
Description
®
•
•
•
•
•
•
•
Typ. R
= 340 m
SuperFET II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. In addition,
internal gate-source ESD diode allows to withstand over 2kV
HBM surge stress. Consequently, SuperFET II MOSFET is very
suitable for the switching power applications such as Audio,
Laptop adapter, Lighting, ATX power and industrial power appli-
cations.
DS(on)
Ultra Low Gate Charge (Typ. Q = 43 nC)
g
Low E
(Typ. 4.1 uJ @ 400 V)
oss
Low Effective Output Capacitance (Typ. C
100% Avalanche Tested
= 138 pF)
oss(eff.)
RoHS Compliant
ESD Improved Capability
Applications
•
•
AC-DC Power Supply
LED Lighting
D
G
G
D
S
TO-220
S
o
Absolute Maximum Ratings T = 25 C unless otherwise noted.
C
Symbol
Parameter
FCP400N80Z
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
800
±20
V
DSS
- DC
- AC
V
A
GSS
(f >1 Hz)
±30
o
- Continuous (T = 25 C)
14
C
I
I
Drain Current
D
o
- Continuous (T = 100 C)
8.9
C
Drain Current
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
33
A
mJ
A
DM
E
Single Pulsed Avalanche Energy
Avalanche Current
339
AS
I
2.2
AR
E
Repetitive Avalanche Energy
MOSFET dv/dt
1.95
100
mJ
AR
dv/dt
V/ns
W
Peak Diode Recovery dv/dt
(Note 3)
20
o
(T = 25 C)
195
C
P
Power Dissipation
D
o
o
- Derate Above 25 C
1.56
-55 to +150
W/ C
o
T , T
Operating and Storage Temperature Range
C
J
STG
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
Unit
FCP400N80Z
0.64
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
JC
o
C/W
62.5
JA
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCP400N80Z
FCP400N80Z
TO-220
Tube
N/A
N/A
50 units
o
Electrical Characteristics T = 25 C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
V
= 0 V, I = 1 mA, T = 25C
800
-
-
-
-
V
DSS
GS
D
J
BV
/ T
Breakdown Voltage Temperature
Coefficient
o
o
DSS
I
= 1 mA, Referenced to 25 C
0.8
V/ C
D
J
V
V
V
= 800 V, V = 0 V
-
-
-
-
25
DS
DS
GS
GS
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
DSS
GSS
o
= 640 V, T = 125 C
-
250
±10
C
I
= ±20 V, V = 0 V
-ꢀ
DS
On Characteristics
V
Gate Threshold Voltage
V
V
V
= V , I = 1.1 mA
2.5
-ꢀ
-
-
4.5
0.4
-
V
S
GS(th)
GS
GS
DS
DS
D
R
g
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 5.5 A
0.34
12
DS(on)
D
= 20 V, I = 5.5 A
D
FS
Dynamic Characteristics
C
C
C
C
C
Input Capacitance
-
-
-
-
-
-
-
-
-
1770
51
2350
pF
pF
pF
pF
pF
nC
nC
nC
iss
V
= 100 V, V = 0 V,
GS
DS
Output Capacitance
70
-
oss
f = 1 MHz
Reverse Transfer Capacitance
Output Capacitance
0.5
28
rss
V
V
= 480 V, V = 0 V, f = 1 MHz
-
oss
DS
DS
GS
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 480 V, V = 0 V
138
43
-
oss(eff.)
GS
Q
Q
Q
56
-
g(tot)
gs
V
V
= 640 V, I = 11 A,
DS
GS
D
= 10 V
8.6
17
(Note 4)
-
gd
ESR
f = 1 MHz
2.3
-
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
20
12
51
2.6
50
34
ns
ns
ns
ns
d(on)
V
V
= 400 V, I = 11 A,
DD
GS
D
r
= 10 V, R = 4.7
g
112
15
d(off)
f
(Note 4)
Drain-Source Diode Characteristics
I
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
14
33
1.2
-
A
A
S
SM
V
t
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 11 A
-
V
SD
GS
SD
395
7.4
ns
C
V
= 0 V, I = 11 A,
rr
GS
SD
dI /dt = 100 A/s
Q
Reverse Recovery Charge
-
F
rr
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 2.2 A, V = 50 V, R = 25 , starting T = 25C.
AS
DD
G
J
3. I 14 A, di/dt 200 A/s, V BV
, starting T = 25C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
PDM
t1
t2
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
5
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VGS
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
6
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCP400N80Z Rev. 1.0
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FCP40SG30
Board Connector, 40 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Gray Insulator
ADAM-TECH
FCP40SGBK
Board Connector, 40 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Black Insulator
ADAM-TECH
FCP40SGE
Board Connector, 40 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Gray Insulator
ADAM-TECH
FCP60SGBK
Board Connector, 60 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Black Insulator
ADAM-TECH
©2020 ICPDF网 联系我们和版权申明