FCP190N60-GF102 [ONSEMI]
N 沟道 SuperFET® II MOSFET 600V, 20.2A, 199mΩ;
| 型号： | FCP190N60-GF102 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II MOSFET 600V, 20.2A, 199mΩ |
| 文件： | 总8页 (文件大小：2029K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCP190N60-GF102
®
N 沟道SuperFET II MOSFET
600 V, 20.2 A, 199 mΩ
特性
•
说明
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务
器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。
650 V @ TJ = 150°C
• 典型值RDS(on) = 170 m
• 超低栅极电荷（典型值Qg = 57 nC)
• 低有效输出电容（典型值Coss(eff.)= 160 pF)
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
•
LCD / LED / PDP 电视照明
• 太阳能逆变器
AC-DC 电源
•
D
G
G
D
S
TO-220
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCP190N60-GF102
符号
参数
- DC
单位
VDSS
VGSS
600
±20
V
漏极－源极电压
栅极－源极电压
V
A
- AC
(f > 1 Hz)
±30
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
20.2
12.7
60.6
400
ID
漏极电流
IDM
EAS
IAR
（说明1）
（说明2）
（说明1）
（说明1）
A
mJ
A
漏极电流
单脉冲雪崩能量
雪崩电流
4.0
EAR
2.1
mJ
重复雪崩能量
MOSFET dv/dt
二极管恢复dv/dt 峰值
100
dv/dt
PD
V/ns
（说明3）
20
(TC = 25°C)
208
W
W/°C
°C
功耗
- 降低至25°C 以上
1.67
-55 至+150
300
TJ, TSTG
TL
工作和存储温度范围
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FCP190N60-GF102
符号
RJC
参数
结至外壳热阻最大值
单位
0.6
°C/W
RJA
62.5
结至环境热阻最大值
© 2013 飞兆半导体公司
December-2017, Rev. 3
Publication Order Number:
FCP190N60-GF102CN/D
封装标识与定购信息
器件编号
顶标
FCP190N60-GF102
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
TO-220
FCP190N60-GF102
不适用
50 个
电气特性TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
600
650
-
-
-
-
BVDSS
V
漏极－源极击穿电压
BVDSS
/ TJ
BVDS
IDSS
IGSS
击穿电压温度系数
ID=10 mA，参考条件为25°C
-
0.67
-
V/oC
V
V
V
GS = 0 V, ID = 20 A
-
-
-
-
700
-
1
漏极- 源极雪崩击穿电压
零栅极电压漏极电流
栅极- 体漏电流
DS = 480 V, VGS = 0 V
-
-
-
A
VDS = 480 V, TC = 125°C
GS = ±20 V, VDS = 0 V
10
V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
2.5
-
3.5
0.199
-
V
S
栅极阈值电压
VGS = 10 V, ID = 10 A
-
-
0.17
21
漏极至源极静态导通电阻
正向跨导
V
DS = 20 V, ID = 10 A
动态特性
Ciss
-
-
-
-
-
-
-
-
-
2220
1630
85
2950
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
V
DS = 25 V, VGS = 0 V,
Coss
Crss
2165
输出电容
f = 1 MHz
128
反向传输电容
输出电容
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
42
-
-
VDS = 0 V 至480 V, VGS = 0 V
160
57
有效输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
74
-
VDS = 380 V, ID = 10 A,
VGS = 10 V
9
（说明4）
Qgd
21
-
ESR
f = 1 MHz
1
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
20
10
64
5
50
30
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 10 A,
V
GS = 10 V, Rg = 4.7
138
20
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
20.2
60.6
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
ISM
VSD
trr
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 10 A
GS = 0 V, ISD = 10 A,
dIF/dt = 100 A/s
-
V
280
3.8
ns
C
V
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 4 A，V = 50 V，R = 25 ，启动T = 25°C。
AS
DD
G
J
3. I 10 A，di/dt 200 A/s，V BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
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2
典型性能特征
图1. 通态区域特性
图2. 传递特性
50
100
VGS = 15.0V
*Notes:
1. VDS = 20V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
2. 250s Pulse Test
150oC
10
10
25oC
-55oC
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.3
0.1
1
1
10
2
3
4
5
6
7
8
VDS, Drain to Source Voltage[V]
VGS, Gate to Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源极电流和温度
0.5
100
0.4
150oC
25oC
10
0.3
VGS = 10V
0.2
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
40
2. 250s Pulse Test
1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
50
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
10000
10
Ciss
VDS = 120V
8
6
4
2
0
VDS = 300V
VDS = 480V
1000
Coss
100
*Note:
1. VGS = 0V
10
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
oss
rss
gd
1
= C
gd
*Note: ID = 10A
40 60
0.5
0.1
1
10
100
600
0
20
Qg, Total Gate Charge [nC]
VDS, Drain to Source Voltage [V]
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3
典型性能特征（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.2
3.0
2.5
2.0
1.5
1.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
0.0
2. ID = 10mA
2. ID = 10A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳体温度的关系
25
100
10s
100s
1ms
10ms
DC
20
15
10
5
10
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain to Source Voltage [V]
图11. Eoss 与漏极- 源极电压的关系
10
8
6
4
2
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage [V]
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4
典型性能特征（接上页）
图12. 瞬态热响应曲线
1
0.5
0.2
PDM
0.1
0.1
t1
t2
0.05
*Notes:
0.02
0.01
1. ZJC(t) = 0.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
t1，矩形脉冲持续时间[ 秒]
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5
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
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6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
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7
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