FCMT125N65S3 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，Power88;
| 型号： | FCMT125N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，Power88 |
| 文件： | 总10页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power,
N-Channel, SUPERFET) III,
Easy-Drive
650 V, 24 A, 125 mW
FCMT125N65S3
General Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
125 mꢀ @ 10 V
24 A
Consequently, SUPERFET III MOSFET Easy−drive series helps
manage EMI issues and allows for easier design implementation.
The Power88 package is an ultra−slim surface−mount package
D
S1: Driver Source
S2: Power Source
2
(1 mm high) with a low profile and small footprint (8 × 8 mm ).
SUPERFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
G
S1 S2
Features
N-CHANNEL MOSFET
• 700 V @ T = 150°C
J
• Typ R
= 100 mꢀ
DS(on)
• Ultra Low Gate Charge (Typ. Q = 49 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 406 pF)
oss(eff.)
S2
S2
S1
G
PQFN4 8X8 2P
CASE 483AP
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
FCMT
125N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCMT125N65S3 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2020 − Rev. 2
FCMT125N65S3/D
FCMT125N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
24
A
C
Continuous (T = 100°C)
15
C
I
Drain Current
Pulsed (Note 1)
60
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
115
AS
AS
I
3.7
E
1.81
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
181
W
W/°C
°C
D
C
Derate Above 25°C
1.45
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 3.7 A, R = 25 ꢀ starting T = 25°C
AS
G
J
3. I ≤ 12 A, di/dt ≤ 200 A/ꢁ s, V ≤ 400 V, starting T = 25°C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.69
45
Unit
Thermal Resistance, Junction to Case, Max.
°C/W
R
R
ꢂ
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
ꢂ
2
4. Device on 1 in pad 2 oz copper pad on 1.5 × 1.5 in. board of FR−4 material.
ORDERING INFORMATION
†
Device
Marking
Package
Reel Size
Tape Width
Quantity
FCMT125N65S3
FCMT125N65S3
PQFN8
13″
13.3 mm
3000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCMT125N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
ꢃ BV
/ꢃ T
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25_C
0.68
1.35
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
= 650 V, V = 0 V
10
ꢁ A
nA
V
DSS
GS
V
= 520 V, T = 125_C
DS
C
I
Gate to Body Leakage Current
V
=
30 V, V = 0 V
100
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
= V , I = 0.59 mA
2.5
4.5
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
DS
= 10 V, I = 12 A
100
16
125
mꢀ
D
g
FS
= 20 V, I = 12 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
1920
44
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
V
= 400 V, V = 0 V, f = 1 MHz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
406
63
oss(eff.)
DS
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
49
g(tot)
V
DS
= 400 V, I = 12 A, V = 10 V
D
GS
Q
12
gs
(Note 5)
Q
22
gd
ESR
f = 1 MHz
0.5
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
22
22
60
5.8
ns
ns
ns
ns
d(on)
V
= 400 V, I = 12 A,
D
t
r
DD
GS
V
= 10 V, R = 4.7
ꢀ
g
t
d(off)
(Note 5)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
24
60
A
A
V
S
I
SM
V
SD
1.2
V
GS
= 0 V, I = 12 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
345
5.7
ns
rr
V
DD
= 400 V, I = 12 A,
SD
F
dI /dt = 100 A/ꢁ s
Q
ꢁ
C
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
FCMT125N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
1
100
V
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1. V = 20 V
DS
2. 250 ꢁs Pulse Test
GS
5.5 V
1505C
10
255C
1. 250 ꢁs Pulse Test
2. T = 25°C
C
−555C
0.1
1
3
4
5
6
7
8
9
0.1
1
10
20
VGS, Gate−Source Voltage[V]
VDS, Drain−Source Voltage[V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
100
10
1. V = 0 V
GS
2. 250 ꢁs Pulse Test
T
C
= 25°C
V
GS
= 10 V
V
1505C
255C
1
= 20 V
GS
0.1
−555C
0.01
0.001
0
10
20
30
40
50
60
0.1
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
200000
100000
10
I
D
= 12 A
C
= C + C (C
= shorted)
iss
gs
gd ds
= C + C
C
C
oss
rss
ds
gd
VDS = 130 V
= C
gd
8
6
4
2
0
10000
1000
Ciss
VDS = 400 V
Coss
100
10
1
Crss
1. V = 0 V
GS
2. f = 1 MHz
0.1
1
10
100
1000
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCMT125N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
1. V = 10 V
2. I = 12 A
D
1. V = 0 V
2. I = 10 mA
D
GS
GS
2.0
1.5
1.0
0.5
0.0
−100
−50
0
50
100
150
200
−50
0
50
100
150
TJ, Junction Temperature [ oC]
TJ, Junction Temperature [ oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
25
20
15
10
5
100
ꢁ
30
s
100 ꢁs
10
1
1 ms
10 ms
Operation in This Area
is Limited by R
DC
DS(on)
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
0.1
0
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [ oC]
VDS, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
0
130
260
390
520
650
VDS, Drain to Source Voltage [V]
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCMT125N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
(t) = r(t) x R
o
Z
R
SINGLE PULSE
ꢂ
J
C
ꢂ JC
= 0.69 C/W
ꢂ JC
Peak T = P
x Z (t) + T
J
DM
ꢂ JC
C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
FCMT125N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCMT125N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13664G
PQFN4 8X8, 2P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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© Semiconductor Components Industries, LLC, 2019
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