FCH130N60_技术文档

MOSFET – N ṿᬣ,

SUPERFET II

600 V, 28 A, 130 mW

FCH130N60

ᛄꢀ

www.onsemi.cn

®

SUPERFET II MOSFET ꢀꢀꢁꢂꢃꢄꢅꢁꢂꢃꢆꢄꢇꢅꢈ

ꢆꢉꢇꢈꢊꢃꢉꢂꢊꢋꢌꢊꢋꢌꢂꢃꢍꢍꢈꢎꢏꢎꢐꢏꢐꢑ

(SJ) MOSFET ꢒꢑꢒꢓ。ꢓꢔ̨ꢕꢇꢅ✃ꢁnᣠ෯ӶĀꢃᔿ，

ᖰŻԳꢖꢈრ͓ꢍꢍ，ၖꢍ૿ᑟַꢌꢗꢔdv/dt ꢘൺȜꢋꢌꢎꢙ༉

ꢍꢚ。

ࣀ

ꢛ，SUPERFET II MOSFET ꢜꢁnꢒꢝ෯५Ӷꢋꢎᜨ

Ӷꢈ

פ

ꢞ

פ

ꢟꢈꢔAC−DC ѿꢠꢡᕂꢈၴꢁꢕ。

V

R

MAX

I MAX

D

DSS

DS(ON)

600 V

130 mꢀ

28 A

D

⑙ꢁ

•ꢖ650 V @ T = 150°C

J

•ꢖ͘५ȜR

= 112 mꢀ

DS(on)

•ꢖꢏꢊꢋꢌꢂꢃ (͘५ȜQ = 54 nC)

g

G

•ꢖꢊᣩᜨꢢꢉꢂ඙(͘५ȜC

= 240 pF)

oss(eff.)

•ꢖ100% ꢣꢤꢙ༉ꢥꢦ

•ꢖꢧ

ר

RoHS ꢨΦ

S

N-Channel MOSFET

• This is a Pb−Free Device

Applications

ꢂ✈

•ꢖꢉǁ / ᣭҁ

ࡈ

ꢂꢩ

•ꢖ࿅✊ꢂꢩ

•ꢖAC-DC ꢂꢩ

G

D

S

TO−247

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FCH

130N60

$Y

&Z

&3

&K

= ON Semiconductor Logo

= Assembly Plant Code

= Data Code (Year & Week)

= Lot Code

FCH130N60

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

May, 2021 − Rev. 3

FCH130N60CN/D

FCH130N60

ꢃꢄভꢅ⍭ꢆꢇ (T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢈ

ꢉꢊ

FCH130N60

ꢋꢌ

V

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

600

DSS

V

− DC

20

GSS

− AC (f > 1 Hz)

30

I

D

ꢅꢆꢇἡ

28

A

- ᪮ঽ (T = 25°C)

C

- ᪮ঽ (T = 100°C)

18

C

I

ꢅꢆꢇἡ

௙ꢂ(Ỉ 1)

84

A

mJ

A

DM

E

ꢃ௙ꢂ↺༉்Ჟ (Ỉ 2)

↺༉ꢇἡ (Ỉ ꢄ1)

Ოꢅ↺༉்Ჟ (Ỉ 1)

MOSFET dv/dt (Ỉ 3)

ꢆꢆ

ٱ

ቂꢅdv/dt ໐ꢇ(Ỉ 3)

ꢈ૧

720

AS

I

6

2.78

AR

E

mJ

V/ns

AR

dv/dt

100

20

P

278

W

W/°C

°C

(T = 25°C)

C

D

− ▨ꢉ 25°C Ŕꢈ૧

ߋ

ᝐ

2.2

T , T

࿅ꢊꢋꢌꢍꢈႆීꢎ

−55 ೃ + 150

300

J

STG

T

✈ꢉ⋪ᖅŔᣠ▨ჵ௪ꢈႆ，᢭ҋꢏꢐ1/8”，ᓡঽ 5 Ң

°C

L

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢑ૓ᚡᝧ)

ꢒ᥼ꢇꢁᡕ᪗ᣠꢓ⍭ꢔꢇጸꢕꢖꢗŔꢇීꢎ，ꢘꢙꢚ்ꢛᔿꢜ。ꢒ᥼ᡕ᪗Ûĵ᪩{℠ꢇ，෦ៀẵƽᚑꢘꢙꢈ்，ꢚ்ꢛොೄꢘꢙᔿꢜ，ᅑ

ڭ

ꢚ∰ሇ。

1. Ოꢅ⍭ꢔꢇ：௙ꢂꢉႆַ℠ꢉᣠꢓꢊꢈ。

2. I = 6 A，V = 50 V，R = 25 ꢀ，ꢋ஫ꢉT = 25°C。

AS

DD

G

J

3. I ≤ 14 A，di/dt ≤ 200 A/ꢁ s，V ≤ BV

，ꢋ஫ꢉT = 25°C。

SD

DD

DSS

J

⋍ꢁ்

׶

ꢈ

ꢉꢊ

FCH130N60

ꢋꢌ

R

ꢊೃꢏꢐꢌꢍᣠꢓꢇ

ꢊೃꢎ੣ꢌꢍᣠꢓꢇ

0.45

40

°C/W

ꢂ

JC

R

ꢂ

JA

ꢍ᎕᧧ᚖꢎꢆ៽ꢏꢐ

ꢑꢒ০ꢈ

⍆᧧

ꢍ᎕

ꢓ᎕ꢔẵ

ꢕꢖꢗ

ꢘꢙ

ꢊᲟ

30 ꢏ

FCH130N60

TO−247

Tube

N/A

www.onsemi.cn

2

FCH130N60

ꢀᷴ⑙ꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢈ

ꢉꢊ

Ἣᚥꢚꢒ

ꢃꢛꢇ ꢜꢝꢇ ꢃꢄꢇ

ꢋꢌ

ꢞꢟ⑙ꢁ

BV

ꢅꢆ-⁰ꢆϛꢐꢇꢁ

V

I

= 0 V, I = 10 mA, T = 25°C

600

650

−

V

DSS

GS

D

J

= 0 V, I = 10 mA, T = 150°C

GS

D

J

ꢃ

B

V

ϛꢐꢇꢁꢈႆ

ߋ

ᝐ

= 10 mA, ꢈႆꢑ૓ 25°C

0.67

V/°C

ꢁ A

DSS

J

D

/

ꢃ

T

I

ꢑ᧥ꢆꢇꢁꢅꢆꢇἡ

V

DS

V

DS

V

GS

= 600 V, V = 0 V

−

2.5

−

1

DSS

GS

= 480 V, V = 0 V, T = 125 °C

−

GS

C

I

᧥ꢆ -ĳꢅꢇἡ

=

20 V, V = 0 V

100

nA

V

GSS

DS

ꢠ᫪⑙ꢁ

V

GS(th)

᧥ꢆꢒꢇꢇꢁ

V

GS

V

GS

V

DS

= V , I = 250 ꢁ A

2.5

−

3.5

130

−

DS

D

R

ꢅꢆೃ⁰ꢆꢓꢔොꢕꢇ

ꢖ

ױ

ꢗො

= 10 V, I = 14 A

112

26

mꢀ

DS(on)

D

g

FS

= 20 V, I = 14 A

−

S

D

ꢡꢢ⑙ꢁ

C

ꢘͅꢇ඙

V

= 380 V, V = 0 V, f = 1 MHz

−

2700

65

3590

85

−

pF

nC

ꢀ

iss

oss

rss

DS

GS

C

ꢘꢗꢇ඙

֭

ױ

Āꢘꢇ඙

2.85

240

54

C

ꢂꢙꢘꢗꢇ඙

V

= 0 V ೃ 480 V, V = 0 V

−

oss(eff.)

DS

GS

Q

10 V ꢚŔ᧥ꢆꢇꢛꢜᲟ

᧥ꢆ -⁰ꢆ᧥ꢆꢇꢛ

᧥ꢆ -ꢅꢆ“ꢝҲ”ꢇꢛ

ꢞꢙꢝꢟꢇꢍ

= 380 V, I = 14 A V = 10 V

70

−

g(tot)

DS

(^Ỉ4)

D

,

GS

Q

12

gs

Q

14

−

gd

ESR

ꢣꢞ⑙ꢁ

f = 1 MHz

1

−

t

ොꢕꢠꢡꢚꢢ

ොꢕ⛺ԧꢚꢢ

͓ꢣꢠꢡꢚꢢ

͓ꢣ⛻ꢤꢚꢢ

V

= 380 V, I = 14 A,

−

25

16

65

4

60

42

ns

d(on)

DD

GS

D

= 10 V, R = 4.7

ꢀ

G

t

r

(^Ỉ4)

t

140

18

d(off)

t

f

⃯ᥡ -⁰ᥡꢤᥡ

ٱ

⑙ꢁ

I

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢓꢖ

ױ

᪮ঽꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢓꢖ

ױ

௙ꢂꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ꢖ

ױ

ꢇꢁ

֭

ױ

ቂꢅꢚꢢ

−

28

84

1.2

−

A

S

I

SM

V

SD

V

= 0 V, I = 14 A

−

V

GS

SD

t

rr

= 0 V, I = 14 A,

376

7.6

ns

ꢁ C

GS

F

SD

dI /dt = 100 A/ꢁ s

Q

֭

ױ

ቂꢅꢇꢛ

−

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢑ૓ᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇꢥꢦሇ”ጸꢧꢕꢖꢗŔꢨꢩꢖꢪꢫꢬꢙ⛻Ŕ

ڡ

ሇ்ꢑᝐ。ꢒ᥼ई⛽

׬

ꢬꢙ⛻ꢭꢮ，

ڡ

ሇ்ꢚ்⛾“ꢇꢥꢦሇ”ጸꢧ

ꢕꢩꢖሇ்ꢑᝐ⛽⛰ೄ。

4. ͘५ꢦሇꢯꢰ⛺ꢱꢲꢉ࿅ꢊꢈႆ。

www.onsemi.cn

3

FCH130N60

ꢜꢝꢁ்⑙ꢥ

100

10

1

200

*Notes:

1. V = 20 V

100

DS

2. 250 ꢁs Pulse Test

150°C

25°C

V

GS

= 10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

−55°C

*Notes:

1. 250 ꢁ s Pulse Test

2. T = 25°C

C

1

10

20

2

3

4

5

6

7

0.1

1

V

GS

, Gate−Source Voltage [V]

V

DS

, Drain to Source Voltage [V]

ࣞ

1. ꢠ᫪Ԛি⑙ꢁ

ࣞ

2. Āᩣ⑙ꢁ

0.30

0.25

0.20

200

100

*Notes:

*Note: T = 25°C

C

1. V = 0 V

GS

2. 250 ꢁs Pulse Test

10

1

150°C

0.1

25°C

V

GS

= 10 V

0.15

0.10

0.01

V

= 20 V

GS

0.001

0.0

0.3

, Body Diode Forward Voltage [V]

SD

0.6

0.9

1.2

1.5

90

0

30

60

I , Drain Current [A]

V

D

ࣞ

3. ꢠ᫪ꢀℋָӶꢎ⃯ᥡꢀἡ

٬

᧥ᥡꢀիŔꢞ

ߋ

ࣞ

4. ĳꢤᥡ

ٱ

ᵃ

ױ

ꢀիָӶꢎ⁰ᥡꢀἡ

٬

ꢁႆŔꢞ

ߋ

100000

10

*Note: I = 14 A

D

VDS = 120 V

10000

1000

C

8

6

4

iss

VDS = 300 V

VDS = 480 V

C

oss

100

10

*Note:

1. V = 0 V

GS

2. f = 1 MHz

C

rss

2

0

C

= C + C (C = shorted)

gs gd ds

iss

1

= C + C

oss

rss

ds

gd

= C

gd

0.1

10

−1

0

1

2

12

24

36

48

60

0

600

10

Q , Total Gate Charge [nC]

g

V

DS

, Drain−Source Voltage [V]

ࣞ

6. ᧥ᥡꢀ็⑙ꢁ

ࣞ

5. ꢀ඙⑙ꢁ

www.onsemi.cn

4

FCH130N60

ꢜꢝꢁ்⑙ꢥ(ᖅ⛺ꢳ)

1.2

1.1

1.0

0.9

0.8

2.5

2.0

1.5

1.0

0.5

*Notes:

1. V = 0 V

1. V = 10 V

GS

2. I = 10 mA

2. I = 14 A

D

−100 −50

0

50

100

150

200

−100 −50

0

50

100

150

200

T , Junction Temperature [°C]

J

T , Junction Temperature [°C]

J

ࣞ

8. ꢠ᫪ꢀℋָӶꢎꢁႆŔꢞ

ߋ

ࣞ

7. ϛՏꢀիָӶꢎꢁႆŔꢞ

ߋ

200

100

35

28

21

14

7

10 ꢁ s

100 ꢁ s

10

1

1 ms

Operation in This Area

DC

is Limited by R

*Notes:

DS(on)

1. T = 25°C

C

2. T = 150°C

J

3. Single Pulse

0.1

0

1

10

100

1000

25

50

75

100

125

150

T , Case Temperature [°C]

C

V

DS

, Drain to Source Voltage [V]

ࣞ

10. ꢃꢄ⃯ᥡꢀἡꢎꢦꢁŔꢞ

ߋ

ࣞ

9. ꢃꢄ൩͈࿅ļԚ

15

12

9

6

3

0

600

0

120

240

360

480

V

DS

, Drain to Source Voltage [V]

ࣞ

11. Eoss ꢎ⃯⁰ᥡꢀիŔꢞ

ߋ

www.onsemi.cn

5

FCH130N60

ꢜꢝꢁ்⑙ꢥ(ᖅ⛺ꢳ)

1

0.5

0.1

0.2

0.1

P

DM

0.05

0.02

0.01

t

1

t

2

0.01

*Notes:

1. Z (t) = 0.45°C/W Max.

Single Pulse

ꢂ

JC

2. Duty Factor, D= t /t

1

2

3. T − T = P * Z (t)

ꢂ

JC

JM

C

DM

−1

0.001

−5

−4

−3

−2

10

1

10

t , Rectangular Pulse Duration [sec]

1

ࣞ

12. ɼꢢ⋍ꢧꢂꢨএ

www.onsemi.cn

6

FCH130N60

V

GS

R

Q

g

L

V

DS

Q

gd

gs

V

GS

DUT

I

G

= ꢴᲟ

Charge

ࣞ

13. ᧥ᥡꢀ็ἫᚥꢀᢿꢎỂꢩ

R

L

V

DS

90%

10%

90%

V

DS

V

DD

V

GS

R

G

10%

GS

DUT

V

GS

t

r

t

f

t

d(off)

d(on)

t

on

t

off

ࣞ

14. ℋꢁꢣꢞἫᚥꢀᢿꢎỂꢩ

L

2

1

2

E_AS

+

LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

ࣞ

15. ∮

٭

ꢌꢀꢪꢣꢞἫᚥꢀᢿꢎỂꢩ

www.onsemi.cn

7

FCH130N60

+

DUT

V

DS

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

ࣞ

16. ꢤᥡ

ٱ

ꢫꢬdv/dt ꢭꢇἫᚥꢀᢿꢎỂꢩ

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

www.onsemi.cn

8

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

P1

D2

A

E

P

A

A2

Q

E2

S

D1

D

E1

B

2

1

3

L1

A1

b4

L

c

(3X) b

(2X) b2

M

B A

0.25

MILLIMETERS

MIN NOM MAX

4.58 4.70 4.82

2.20 2.40 2.60

1.40 1.50 1.60

1.17 1.26 1.35

1.53 1.65 1.77

2.42 2.54 2.66

0.51 0.61 0.71

20.32 20.57 20.82

(2X) e

DIM

A

A1

A2

b

b2

b4

c

GENERIC

D

MARKING DIAGRAM*

D1 13.08

~

D2

E

0.51 0.93 1.35

15.37 15.62 15.87

AYWWZZ

XXXXXXX

E1 12.81

~

E2

e

L

4.96 5.08 5.20

5.56

15.75 16.00 16.25

3.69 3.81 3.93

3.51 3.58 3.65

XXXX = Specific Device Code

~

A

Y

= Assembly Location

= Year

WW = Work Week

ZZ = Assembly Lot Code

L1

P

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

P1 6.60 6.80 7.00

Q

S

5.34 5.46 5.58

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13851G

TO−247−3LD SHORT LEAD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

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


型号：	FCH130N60
厂家：	ONSEMI
描述：	N 沟道 SuperFET® II MOSFET
文件：	总10页 (文件大小：464K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FCH130N60 [ONSEMI]

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