FCH104N60_技术文档

MOSFET – N ṿᬣ,

SUPERFET II

600 V, 37 A, 104 mW

FCH104N60

ᛄꢀ

www.onsemi.cn

®

SUPERFET II MOSFET ꢀꢀꢁꢂꢃꢄꢅꢁꢂꢃꢆꢄꢇꢈꢉ

ꢅꢊꢆꢇꢋꢃꢈꢂꢉꢌꢍꢋꢎꢏꢂꢃꢐꢊꢇꢑꢒꢋꢓꢌꢍꢎ

(SJ) MOSFET ꢏꢔꢕꢖ。ꢐꢑ̨ꢒꢇꢈ✃ꢁnᣠ෯ӶĀꢃᔿ，

ᖰŻԳꢓꢇრ͓ꢐꢊ，ၖᑟַꢏꢔꢗdv/dt ꢕൺȜꢌꢍꢋꢖ༉。

ࣀ

ꢗ，SUPERFET II MOSFETꢗꢘꢁnꢏꢙ෯५ӶꢌꢋᜨӶꢇꢚꢗ

AC−DC ѿꢛꢜᕂ。

V

R

MAX

I MAX

D

DSS

DS(ON)

600 V

104 mꢀ

37 A

D

⑙ꢁ

•ꢘ650 V @ T = 150°C

J

•ꢘ͘५ȜR

= 96 mꢀ

DS(on)

•ꢘꢌꢋꢎꢏꢂꢃ (͘५Ȝ Q = 63 nC)

g

G

•ꢘꢋᣩᜨꢝꢊꢂ඙(͘५ȜC

•ꢘ100% ꢞꢟꢖ༉ꢠꢡ

•ꢘꢢ

ר

RoHS ᧧Φ

= 280 pF)

oss(eff.)

S

N-Channel MOSFET

• This is a Pb−Free Device

ꢂ✈

•ꢘꢈǁ / ꢙꢚꢛꢂꢣ

•ꢘꢜꢝꢂꢣ

G

D

S

TO−247

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FCH

104N60

$Y

&Z

&3

&K

= ON Semiconductor Logo

= Assembly Plant Code

= Data Code (Year & Week)

= Lot Code

FCH104N60

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

April, 2021 − Rev. 3

FCH104N60CN/D

FCH104N60

ভꢃꢄꢅ⍭ꢆꢇ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢈ

ꢉꢊ

FCH104N60

ꢋꢌ

V

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

600

20

DSS

V

− DC

− AC

GSS

(f > 1 Hz)

30

I

D

ꢅꢆꢇἡ

37

A

- ᪮ঽ (T = 25°C)

C

- ᪮ঽ (T = 100°C)

24

C

I

ꢅꢆꢇἡ

- ௙ꢂ(ꢃꢄ 1)

111

A

mJ

A

DM

E

ꢃ௙ꢂ↺༉்Ჟ (ꢃꢄ 2)

↺༉ꢇἡ (ꢃꢄ ꢄ1)

Ოꢅ↺༉்Ჟ (ꢃꢄ 1)

MOSFET dv/dt

809

AS

AR

I

6.8

E

3.57

100

mJ

V/ns

AR

dv/dt

ꢆꢆ

ٱ

ቂꢅdv/dt ໐ꢇ(ꢃꢄ 3)

ꢈ૧

20

P

357

W

W/°C

°C

(T = 25°C)

C

D

- ▨ꢉ25°C Ŕꢈ૧

ߋ

ᝐ

2.85

−55 ೃ + 150

300

T , T

࿅ꢊꢋꢌꢍꢈႆීꢎ

J

STG

T

✈ꢉ⋪ᖅŔᣠꢏჵ௪ꢈႆ，᢭ҋꢐꢑ1/8”，ᓡঽ 5 Ң

°C

L

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢒ૓ᚡᝧ)

ꢓ᥼ꢇꢁᡕ᪗ᣠꢏ⍭ꢔꢇጸꢕꢖꢗŔꢇීꢎ，ꢘꢙꢚ்ꢛᔿꢜ。ꢓ᥼ᡕ᪗Ûĵ᪩{℠ꢇ，෦ៀẵƽᚑꢘꢙꢈ்，ꢚ்ꢛොೄꢘꢙᔿꢜ，ᅑ

ڭ

ꢚ∰ሇ。

1. Ოꢅ⍭ꢔꢇ：௙ꢂඝႆַ℠ꢉᣠꢏণꢈ。

2. I = 6.8 A，R = 25 ꢀ，რ஫ꢉT = 25°C。

AS

G

J

3. I ≤ 18.5 A，di/dt ≤ 200 A/ꢁ s，V ≤ 380 V，რ஫ꢉT = 25°C。

SD

DD

J

⋍ꢁ்

׶

ꢈ

ꢉꢊ

FCH104N60

ꢋꢌ

R

ণೃꢐꢑ⋍ℋᣠꢏꢇ

ণೃ▏੣⋍ℋᣠꢏꢇ

0.35

40

°C/W

ꢂ

JC

R

ꢂ

JA

ꢍ᎕᧧ᚖꢎꢆ៽ꢏꢐ

ꢑꢒ০ꢈ

⍆᧧

ꢍ᎕

ꢓ᎕ꢔẵ

਱᝹

ٱ

ꢕꢖꢗ

ꢘꢙ

ꢊᲟ

30 ⍧

FCH104N60

TO−247

N/A

www.onsemi.cn

2

FCH104N60

ꢀᷴ⑙ꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢈ

ꢉꢊ

Ἣᚥꢚꢒ

ꢄꢛꢇ ꢜꢝꢇ ꢄꢅꢇ

ꢋꢌ

ꢞꢟ⑙ꢁ

BV

ꢅꢆ－⁰ꢆϛՏꢇꢁ

V

I

= 0 V, I = 10 mA, T = 25°C

600

650

−

V

DSS

GS

D

J

= 0 V, I = 10 mA, T = 150°C

GS

D

J

ꢃ

B

V

ϛՏꢇꢁꢈႆ

ߋ

ᝐ

= 10 mA, ꢒ૓ 25°C ᝐꢇ

0.67

V/°C

ꢁ A

DSS

J

D

/

ꢃ

T

I

⇆᧥ꢆꢇꢁꢅꢆꢇἡ

V

DS

V

DS

V

GS

= 600 V, V = 0 V

−

1.98

−

1

DSS

GS

= 480 V, V = 0 V, T = 125 °C

−

GS

C

I

᧥ꢆ -ĳꢅꢇἡ

=

20 V, V = 0 V

100

nA

V

GSS

DS

ꢠ᫪⑙ꢁ

V

GS(th)

᧥ꢆ⃘ꢇꢇꢁ

V

GS

V

GS

V

DS

= V , I = 250 ꢁ A

2.5

−

3.5

104

−

DS

D

R

ꢅꢆೃ⁰ꢆ∩ᇡො᫪ꢇℋ

ᵃ

ױ

ᢸො

= 10 V, I = 18.5 A

96

33

mꢀ

DS(on)

D

g

FS

= 20 V, I = 18.5 A

−

S

D

ꢡꢢ⑙ꢁ

C

ᩣͅꢇ඙

V

= 380 V, V = 0 V, f = 1 MHz

−

3130

75

4165

100

−

pF

nC

ꢀ

iss

oss

rss

DS

GS

C

ᩣꢗꢇ඙

֭

ױ

Āᩣꢇ඙

3.66

280

63

C

ꢂᜨᩣꢗꢇ඙

V

= 0 V ೃ 400 V, V = 0 V

−

oss(eff.)

DS

GS

Q

10 V ꢇꢁŔ᧥ꢆꢇ็ማᲟ

᧥ꢆ -⁰ꢆ᧥ꢆꢇ็

᧥ꢆ -ꢅꢆ“݃Ҳ”ꢇ็

ؙᜨꢝତꢇℋ

= 380 V, I = 18.5 A V = 10 V

82

−

g(tot)

DS

D

,

GS

(ꢃꢄ 4)

Q

14

gs

Q

15

−

gd

ESR

ꢣꢞ⑙ꢁ

f = 1 MHz

0.97

−

t

ො᫪ზ᪯៖⃄

ො᫪⛺ԧ៖⃄

͓ឍზ᪯៖⃄

͓ឍ⛻ℝ៖⃄

V

= 380 V, I = 18.5 A,

−

26

18

72

3.3

62

46

ns

d(on)

DD

GS

D

= 10 V, R = 4.7

ꢀ

G

t

r

(ꢃꢄ 4)

t

154

17

d(off)

t

f

⃯ꢤ-⁰ꢤꢥꢤ

ٱ

⑙ꢁ

I

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢏᵃ

ױ

᪮ঽꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢏᵃ

ױ

௙ꢂꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᵃ

ױ

ꢇꢁ

֭

ױ

ቂꢅ៖⃄

−

37

114

1.2

−

A

S

I

SM

V

SD

V

= 0 V, I = 18.5 A

−

V

GS

SD

t

rr

= 0 V, I = 18.5 A,

414

8.8

ns

ꢁ C

GS

F

SD

dI /dt = 100 A/ꢁ s

Q

֭

ױ

ቂꢅꢇ็

−

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢒ૓ᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇᷴ⑙ሇ”ጸ᨜ꢕꢖꢗŔ᠏ᐠꢖἫᚥ᥁ꢙ⛻Ŕ

ڡ

ሇ்ꢒᝐ。ꢓ᥼ई⛽

׬

᥁ꢙ⛻᪠ጜ，

ڡ

ሇ்ꢚ்⛾“ꢇᷴ⑙ሇ”ጸ᨜

ꢕᐠꢖሇ்ꢒᝐ⛽⛰ೄ。

4. ͘५⑙ሇᤌ៸⛺Ⓦ֛ꢉ࿅ꢊꢈႆ。

www.onsemi.cn

3

FCH104N60

ꢜꢝ⑙ꢁ

100

10

1

200

V

= 10.0 V

8.0 V

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

*Notes:

GS

1. V = 10 V

DS

100

2. 250 ꢁs Pulse Test

150°C

25°C

10

−55°C

*Notes:

1. 250 ꢁ s Pulse Test

2. T = 25°C

C

1

10

20

0.3

1

2

3

4

5

6

7

V

DS

, Drain to Source Voltage [V]

V

GS

, Gate−Source Voltage [V]

ࣞ

2. Āᩣ⑙ꢁ

ࣞ

1. ꢠ᫪Ԛি⑙ꢁ

0.24

0.20

0.16

200

100

*Notes:

*Note: T = 25°C

C

1. V = 0 V

GS

2. 250 ꢁs Pulse Test

10

1

150°C

25°C

0.1

V

GS

= 10 V

0.12

0.08

0.01

V

= 20 V

GS

0.001

0

40

60

80

100

0.0

0.3

V , Body Diode Forward Voltage [V]

SD

0.6

0.9

1.2

1.5

20

I , Drain Current [A]

D

ࣞ

4. ĳꢥꢤ

ٱ

ᵃ

ױ

ꢀիָӶꢎ⁰ꢤꢀἡ

٬

ꢁႆŔꢞ

ߋ

ࣞ

3. ꢠ᫪ꢀℋָӶꢎ⃯ꢤꢀἡ

٬

᧥ꢤꢀիŔꢞ

ߋ

20000

10000

10

*Note: I = 18.5 A

D

VDS = 120 V

C

8

6

4

iss

1000

VDS = 300 V

VDS = 480 V

100

10

C

oss

*Note:

1. V = 0 V

GS

2. f = 1 MHz

C

= C + C (C = shorted)

gs gd ds

2

0

1

iss

C

rss

= C + C

oss

rss

ds

gd

= C

gd

0.1

14

28

42

56

70

600

0

0.1

1

10

100

Q , Total Gate Charge [nC]

g

V

DS

, Drain−Source Voltage [V]

ࣞ

6. ᧥ꢤꢀ็⑙ꢁ

ࣞ

5. ꢀ඙⑙ꢁ

www.onsemi.cn

4

FCH104N60

ꢜꢝ⑙ꢁ （ᖅ⛺⍅）

1.2

1.1

1.0

0.9

2.5

*Notes:

1. V = 0 V

1. V = 10 V

GS

2. I = 10 mA

2. I = 18.5 A

D

2.0

1.5

1.0

0.5

0.8

−100

−50

0

50

100

150

200

−100 −50

0

50

100

150

200

T , Junction Temperature [°C]

J

T , Junction Temperature [°C]

J

ࣞ

8. ꢠ᫪ꢀℋָӶꢎꢁႆŔꢞ

ߋ

ࣞ

7. ϛՏꢀիָӶꢎꢁႆŔꢞ

ߋ

300

40

30

20

10

0

10 ꢁ s

100

100 ꢁ s

10

1 ms

Operation in This Area

10 ms

DC

1

is Limited by R

DS(on)

*Notes:

1. T = 25°C

C

0.1

0.01

2. T = 150°C

J

3. Single Pulse

1

10

100

1000

150

25

50

75

100

125

T , Case Temperature [°C]

C

V

DS

, Drain to Source Voltage [V]

ࣞ

9. ꢄꢅ൩͈࿅ļԚ

ࣞ

10. ꢄꢅ⃯ꢤꢀἡꢎꢦꢁŔꢞ

ߋ

20

16

12

8

4

0

600

0

120

240

360

480

V

DS

, Drain to Source Voltage [V]

ࣞ

11. Eoss ꢎ⃯⁰ꢤꢀիŔꢞ

ߋ

www.onsemi.cn

5

FCH104N60

ꢜꢝ⑙ꢁ （ᖅ⛺⍅）

1

0.1

0.5

0.2

0.1

P

DM

0.05

t

1

t

0.02

0.01

Single Pulse

0.01

2

*Notes:

1. Z (t) = 0.35°C/W Max.

2. Duty Factor, D= t /t

ꢂ

JC

1

2

3. T − T = P * Z (t)

ꢂ

JC

JM

C

DM

1E−3

−5

−4

−3

−2

−1

10

1

t , Rectangular Pulse Duration [sec]

1

ࣞ

12. ɼꢢ⋍ꢧꢂꢨএ

www.onsemi.cn

6

FCH104N60

V

GS

R

Q

g

L

V

DS

Q

gs

gd

V

GS

DUT

I

G

= ꢉᲟ

Charge

ࣞ

13. ᧥ꢤꢀ็ἫᚥꢀᢿꢎỂꢩ

R

L

V

DS

90%

10%

90%

V

DS

V

DD

V

GS

R

G

10%

V

GS

DUT

V

GS

t

r

t

f

t

d(off)

d(on)

t

on

t

off

ࣞ

14. ℋꢁꢣꢞἫᚥꢀᢿꢎỂꢩ

L

2

1

2

E_AS

+

LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

ࣞ

15. ∮

٭

ꢌꢀꢪꢣꢞἫᚥꢀᢿꢎỂꢩ

www.onsemi.cn

7

FCH104N60

+

DUT

V

DS

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

ࣞ

16. ꢥꢤ

ٱ

ꢫꢬ dv/dt ꢭꢇἫᚥꢀᢿꢎỂꢩ

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

www.onsemi.cn

8

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

P1

D2

A

E

P

A

A2

Q

E2

S

D1

D

E1

B

2

1

3

L1

A1

b4

L

c

(3X) b

(2X) b2

M

B A

0.25

MILLIMETERS

MIN NOM MAX

4.58 4.70 4.82

2.20 2.40 2.60

1.40 1.50 1.60

1.17 1.26 1.35

1.53 1.65 1.77

2.42 2.54 2.66

0.51 0.61 0.71

20.32 20.57 20.82

(2X) e

DIM

A

A1

A2

b

b2

b4

c

GENERIC

D

MARKING DIAGRAM*

D1 13.08

~

D2

E

0.51 0.93 1.35

15.37 15.62 15.87

AYWWZZ

XXXXXXX

E1 12.81

~

E2

e

L

4.96 5.08 5.20

5.56

15.75 16.00 16.25

3.69 3.81 3.93

3.51 3.58 3.65

XXXX = Specific Device Code

~

A

Y

= Assembly Location

= Year

WW = Work Week

ZZ = Assembly Lot Code

L1

P

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

P1 6.60 6.80 7.00

Q

S

5.34 5.46 5.58

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13851G

TO−247−3LD SHORT LEAD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

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


型号：	FCH104N60
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，37 A，104 mΩ，TO-247
文件：	总10页 (文件大小：458K)
中文：	中文翻译
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FCH104N60 [ONSEMI]

相关型号：

FCH104N60F

FCH104N60F-F085

FCH10A03L

FCH10A04

FCH10A06

FCH10A09

FCH10A10_15

FCH10A15

FCH10A15_15

FCH10A18

FCH10A20

FCH10AU10